Ordering number : ENA1754A ATP112 P-Channel Power MOSFET http://onsemi.com –60V, –25A, 43mΩ, Single ATPAK Features • • • ON-resistance RDS(on)1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.) Halogen free compliance • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --60 V ±20 V --25 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 50 mJ --13 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --75 A 40 W °C Note : *1 VDD=--10V, L=500μH, IAV=--13A *2 L≤500μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP112-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP112 6.05 4.6 Electrical Connection 0.7 0.6 0.55 0.4 2.3 0.1 2.3 1.7 0.5 3 0.8 TL 2,4 2 1 9.5 7.3 LOT No. Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 62012 TKIM/72110PA TKIM TC-00002329 No. A1754-1/7 ATP112 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--60V, VGS=0V Ratings min typ Unit max --60 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--13A 24 RDS(on)1 ID=--13A, VGS=--10V 33 43 mΩ RDS(on)2 ID=--7A, VGS=--4.5V 42 59 mΩ RDS(on)3 ID=--3.5A, VGS=--4V 45 63 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.2 --1 μA ±10 μA --2.6 1450 pF 155 pF Crss 125 pF Turn-ON Delay Time td(on) 10 ns Rise Time tr 80 ns Turn-OFF Delay Time td(off) 150 ns Fall Time tf 120 ns Total Gate Charge Qg 33.5 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz V S See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--25A IS=--25A, VGS=0V 5.3 nC 7.9 nC --0.97 --1.5 V Switching Time Test Circuit 0V --10V VDD= --30V VIN ID=13A RL=2.3Ω VIN D PW=10μs D.C.≤1% VOUT G ATP112 P.G 50Ω S Ordering Information Device ATP112-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1754-2/7 ATP112 V --3.0 V 5 4. -- VGS= --2.5V Tc = 75 °C --30 --20 --10 25 --5 --40 °C Tc= 75° --2 C 5°C Drain Current, ID -- A --10 --50 --4 0V --10 .0V --8 .0V --6 .0V --15 . --3 --16 . Drain Current, ID -- A --20 VDS= --10V Single pulse 5V V .0 --2 5°C Tc=25°C Single pulse ID -- VGS --60 25° C ID -- VDS --25 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 --7A 60 --3.5A 50 40 30 Gate-to-Source Voltage, VGS -- V VDS= --10V Single pulse °C 25 2 C 5° 10 = Tc 7 --2 ° 75 C 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 3 5 55 50 45 40 35 30 25 20 --25 0 25 125 150 IT15593 VGS=0V Single pulse --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT15595 Ciss, Coss, Crss -- VDS f=1MHz 2 tf 100 7 5 tr 3 2 Ciss 1000 7 5 3 2 Coss 100 td(on) 10 Crss 7 5 100 IS -- VSD --100 7 5 3 2 --10 7 5 3 2 5 td(off) 3 75 3 2 2 50 Diode Forward Voltage, VSD -- V VDD= --30V VGS= --10V 7 --0.1 A 3.5 = -, ID .0V --7A --4 = I D= , S 5V VG 13A --4. = -= I D , .0V V GS --10 = V GS 60 --0.01 7 5 3 2 --0.001 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 65 IT15594 SW Time -- ID 5 70 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 75 IT15592 | yfs | -- ID 5 Single pulse 80 15 10 --50 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 IT15591 RDS(on) -- Tc 85 ID= --13A 20 0 Gate-to-Source Voltage, VGS -- V 90 Tc=25°C Single pulse 80 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 --5.5 --6.0 0 IT15590 RDS(on) -- VGS 90 0 --2.0 25°C --25° C --0.4 5°C --0.2 Tc= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 IT15596 5 0 --10 --20 --30 --40 --50 Drain-to-Source Voltage, VDS -- V --60 IT15597 No. A1754-3/7 ATP112 VGS -- Qg --10 --7 3 2 Drain Current, ID -- A 3 2 0 5 10 15 20 25 30 Total Gate Charge, Qg -- nC PD -- Tc 40 30 25 20 15 10 5 20 40 60 80 100 3 5 7 --1.0 120 Case Temperature, Tc -- °C 140 160 IT15600 2 3 5 7 --10 2 3 5 7 --100 IT15599 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 35 0 2 IT15598 40 0 Tc=25°C Single pulse --0.1 --0.1 Avalanche Energy derating factor -- % 45 35 Operation in this area is limited by RDS(on). on ati --1 s er Gate-to-Source Voltage, VGS -- V 3 2 --2 0 Allowable Power Dissipation, PD -- W --10 7 5 --1.0 7 5 --3 ms 0m s 10 op --4 10 ID= --25A 10 μs DC --5 10 0μ s --6 IDP= --75A (PW≤10μs) 1m --8 --100 7 5 --9 ASO 2 VDS= --30V ID= --25A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT15179 No. A1754-4/7 ATP112 Taping Specification ATP112-TL-H No. A1754-5/7 ATP112 Outline Drawing ATP112-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1754-6/7 ATP112 Note on usage : Since the ATP112 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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