Ordering number : ENA1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS(on)1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 60 PW≤10μs, duty cycle≤1% V 75 A 225 A 60 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 94 mJ 38 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=15V, L=100μH, IAV=38A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP214-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP214 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 3 1.7 2,4 2 1 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 62012 TKIM/70710PA TKIM TC-00002343 No. A1712-1/7 ATP214 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max 60 ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1 μA ±10 μA 2.6 V 100 RDS(on)1 RDS(on)2 VDS=10V, ID=38A ID=38A, VGS=10V 6.2 8.1 mΩ ID=19A, VGS=4.5V 8.2 11.5 mΩ RDS(on)3 ID=10A, VGS=4V 9.2 14 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD S 4850 VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=75A IS=75A, VGS=0V pF 370 pF 280 pF 30 ns 240 ns 360 ns 250 ns 96 nC 18.5 nC 18 nC 0.93 1.2 V Switching Time Test Circuit 10V 0V VDD=30V VIN ID=38A RL=0.79Ω VIN D PW=10μs D.C.≤1% VOUT G ATP214 P.G 50Ω S Ordering Information Device ATP214-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1712-2/7 ATP214 ID -- VDS 50 45 40 35 90 80 3.0V 30 25 20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 20 1.8 30 ID=10A 16 19A 14 38A 12 10 8 6 4 2 3 4 5 6 7 8 9 3 2 = Tc 10 7 5 5°C --2 C 75° 3 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 VDD=30V VGS=10V 7 td(off) 5 2 tf 100 7 tr 5 td(on) 3 4.5 IT15695 14 A 10 I D= , V .0 12 =4 V GS 10 A =19 , ID V 5 . 38A =4 I D= S , V VG .0 =10 VGS 8 6 4 2 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 --40 --20 0 20 40 60 80 100 120 140 160 IT15697 IS -- VSD VGS=0V Single pulse 0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT15699 Ciss, Coss, Crss -- VDS 10000 f=1MHz 7 Ciss 5 Ciss, Coss, Crss -- pF 3 4.0 Case Temperature, Tc -- °C 5 7 100 IT15698 SW Time -- ID 1000 3.5 16 0 --60 2 1.0 7 5 0.1 3.0 18 Source Current, IS -- A °C 25 2.5 Single pulse VDS=10V Single pulse 100 7 5 2.0 1.5 RDS(on) -- Tc IT15696 | yfs | -- ID 3 1.0 20 10 11 12 13 14 15 16 Gate-to-Source Voltage, VGS -- V 0.5 Gate-to-Source Voltage, VGS -- V 2 1 0 IT15694 Tc=25°C Single pulse 18 0 2.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.2 0 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S 40 10 5 Switching Time, SW Time -- ns 50 25° C VGS=2.5V 10 2 60 20 15 0 70 Tc= 75° C --25 °C 55 VDS=10V Tc= 75° C 25°C --25 °C Drain Current, ID -- A 60 V 3.5 4.5 V 16.0V 10.0V 8. 0V 65 ID -- VGS 100 Tc=25°C Drain Current, ID -- A 70 4.0 V 6 .0 V 75 3 2 1000 7 5 Coss 3 Crss 2 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 5 7 100 2 IT15700 100 7 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT15701 No. A1712-3/7 ATP214 VGS -- Qg 10 7 6 5 3 2 10 20 30 40 50 60 70 80 PD -- Tc 100 40 30 20 10 20 40 60 80 100 3 5 7 1.0 120 Case Temperature, Tc -- °C 140 160 IT15513 2 3 5 7 10 2 3 5 7 100 IT15514 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 50 0 2 IT15711 60 0 Tc=25°C Single pulse 0.1 0.1 Avalanche Energy derating factor -- % 70 90 n 1 io 1.0 7 5 0 Operation in this area is limited by RDS(on). 3 2 2 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 10 7 5 at 3 1m s 10 m 10 s 0m s 3 2 10 μs 10 0μ s er 4 ID=75A 100 7 5 op Drain Current, ID -- A 8 0 IDP=225A (PW≤10μs) 3 2 C D Gate-to-Source Voltage, VGS -- V 9 ASO 5 VDS=30V ID=75A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT15179 No. A1712-4/7 ATP214 Taping Specification ATP214-TL-H No. A1712-5/7 ATP214 Outline Drawing ATP214-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1712-6/7 ATP214 Note on usage : Since the ATP214 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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