SANYO ENA1712A

ATP214
Ordering number : ENA1712A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ATP214
General-Purpose Switching Device
Applications
Features
•
•
•
ON-resistance RDS(on)1=6.2mΩ(typ.)
4V drive
Protection diode in
Input Capacitance Ciss=4850pF(typ.)
Halogen free compliance
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (PW≤10μs)
Allowable Power Dissipation
Unit
60
PW≤10μs, duty cycle≤1%
V
75
A
225
A
60
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
94
mJ
38
A
Avalanche Current *2
Tc=25°C
V
±20
Note : *1 VDD=15V, L=100μH, IAV=38A
*2 L≤100μH, Single pulse
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP214-TL-H
1.5
6.5
Packing Type: TL
Marking
ATP214
0.4
0.4
0.5
4
4.6
2.6
LOT No.
6.05
4.6
Electrical Connection
9.5
7.3
TL
0.8
2.3
0.6
2.3
0.55
0.7
3
0.1
0.5
1
1.7
2,4
2
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
1
3
SANYO : ATPAK
http://semicon.sanyo.com/en/network
62012 TKIM/70710PA TKIM TC-00002343 No. A1712-1/7
ATP214
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
Conditions
Ratings
min
typ
Unit
max
60
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
V
1.2
1
μA
±10
μA
2.6
V
100
RDS(on)1
RDS(on)2
VDS=10V, ID=38A
ID=38A, VGS=10V
6.2
8.1
mΩ
ID=19A, VGS=4.5V
8.2
11.5
mΩ
RDS(on)3
ID=10A, VGS=4V
9.2
14
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
Rise Time
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
S
4850
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=75A
IS=75A, VGS=0V
pF
370
pF
280
pF
30
ns
240
ns
360
ns
250
ns
96
nC
18.5
nC
18
nC
0.93
1.2
V
Switching Time Test Circuit
10V
0V
VDD=30V
VIN
ID=38A
RL=0.79Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP214
P.G
50Ω
S
Ordering Information
Device
ATP214-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1712-2/7
ATP214
ID -- VDS
50
45
40
35
90
80
3.0V
30
25
20
0.4
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
20
1.8
30
ID=10A
16
19A
14
38A
12
10
8
6
4
2
3
4
5
6
7
8
9
3
2
=
Tc
10
7
5
5°C
--2
C
75°
3
2
3
5 7 1.0
2
3
5 7 10
2
Drain Current, ID -- A
3
VDD=30V
VGS=10V
7
td(off)
5
2
tf
100
7
tr
5
td(on)
3
4.5
IT15695
14
A
10
I D=
,
V
.0
12
=4
V GS
10
A
=19
, ID
V
5
.
38A
=4
I D=
S
,
V
VG
.0
=10
VGS
8
6
4
2
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
--40
--20
0
20
40
60
80
100
120
140
160
IT15697
IS -- VSD
VGS=0V
Single pulse
0
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V
1.4
IT15699
Ciss, Coss, Crss -- VDS
10000
f=1MHz
7
Ciss
5
Ciss, Coss, Crss -- pF
3
4.0
Case Temperature, Tc -- °C
5 7 100
IT15698
SW Time -- ID
1000
3.5
16
0
--60
2
1.0
7
5
0.1
3.0
18
Source Current, IS -- A
°C
25
2.5
Single pulse
VDS=10V
Single pulse
100
7
5
2.0
1.5
RDS(on) -- Tc
IT15696
| yfs | -- ID
3
1.0
20
10 11 12 13 14 15 16
Gate-to-Source Voltage, VGS -- V
0.5
Gate-to-Source Voltage, VGS -- V
2
1
0
IT15694
Tc=25°C
Single pulse
18
0
2.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0.2
0
Drain-to-Source Voltage, VDS -- V
Forward Transfer Admittance, | yfs | -- S
40
10
5
Switching Time, SW Time -- ns
50
25°
C
VGS=2.5V
10
2
60
20
15
0
70
Tc=
75°
C
--25
°C
55
VDS=10V
Tc=
75°
C
25°C
--25
°C
Drain Current, ID -- A
60
V
3.5
4.5
V
16.0V 10.0V 8.
0V
65
ID -- VGS
100
Tc=25°C
Drain Current, ID -- A
70
4.0
V
6 .0 V
75
3
2
1000
7
5
Coss
3
Crss
2
2
10
0.1
2
3
5 7 1.0
2
3
5 7 10
2
Drain Current, ID -- A
3
5 7 100
2
IT15700
100
7
0
10
20
30
40
50
Drain-to-Source Voltage, VDS -- V
60
IT15701
No. A1712-3/7
ATP214
VGS -- Qg
10
7
6
5
3
2
10
20
30
40
50
60
70
80
PD -- Tc
100
40
30
20
10
20
40
60
80
100
3
5 7 1.0
120
Case Temperature, Tc -- °C
140
160
IT15513
2
3
5 7 10
2
3
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
50
0
2
IT15711
60
0
Tc=25°C
Single pulse
0.1
0.1
Avalanche Energy derating factor -- %
70
90
n
1
io
1.0
7
5
0
Operation in
this area is
limited by RDS(on).
3
2
2
Total Gate Charge, Qg -- nC
Allowable Power Dissipation, PD -- W
10
7
5
at
3
1m
s
10
m
10
s
0m
s
3
2
10
μs
10
0μ
s
er
4
ID=75A
100
7
5
op
Drain Current, ID -- A
8
0
IDP=225A (PW≤10μs)
3
2
C
D
Gate-to-Source Voltage, VGS -- V
9
ASO
5
VDS=30V
ID=75A
5 7 100
IT15514
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT15179
No. A1712-4/7
ATP214
Taping Specification
ATP214-TL-H
No. A1712-5/7
ATP214
Outline Drawing
ATP214-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1712-6/7
ATP214
Note on usage : Since the ATP214 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
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mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1712-7/7