ATP113 Ordering number : ENA1755 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)1=22.5mΩ(typ.) 4V drive • • Input Capacitance Ciss=2400pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --60 V ±20 V --35 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 95 mJ --18 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --105 A 50 W °C Note : *1 VDD=--10V, L=500μH, IAV=--18A *2 L≤500μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 1.5 6.5 Packing Type: TL 0.4 0.4 0.5 4 4.6 2.6 Marking 4.6 6.05 LOT No. TL 9.5 7.3 ATP113 0.8 2.3 0.6 2.3 0.55 2,4 0.7 3 0.1 0.5 1 1.7 Electrical Connection 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 SANYO : ATPAK 3 http://semicon.sanyo.com/en/network 72110PA TK IM TC-00002330 No. A1755-1/4 ATP113 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--60V, VGS=0V typ Unit max --60 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--18A 37 RDS(on)1 ID=--18A, VGS=--10V 22.5 29.5 mΩ RDS(on)2 ID=--9A, VGS=--4.5V 27 38 mΩ RDS(on)3 ID=--5A, VGS=--4V 29 44 mΩ Input Capacitance Ciss VDS=--20V, f=1MHz 2400 pF Output Capacitance Coss VDS=--20V, f=1MHz 250 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 195 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 15 ns See specified Test Circuit. 125 ns td(off) tf See specified Test Circuit. 250 ns Fall Time See specified Test Circuit. 200 ns Total Gate Charge Qg VDS=--30V, VGS=--10V, ID=--35A 55 nC Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time --1.2 --1 μA ±10 μA --2.6 V S Gate-to-Source Charge Qgs VDS=--30V, VGS=--10V, ID=--35A 7.5 nC Gate-to-Drain “Miller” Charge Qgd 12 nC Diode Forward Voltage VSD VDS=--30V, VGS=--10V, ID=--35A IS=--35A, VGS=0V --0.98 --1.5 V Switching Time Test Circuit 0V --10V VDD= --30V VIN ID=18A RL=1.67Ω VIN D PW=10μs D.C.≤1% VOUT G ATP113 50Ω --16 --15 V .5 --4 --10 --30 --20 25 °C Tc= --10 --5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 IT15601 75° C --25 °C Tc= --40 75° C --20 --50 VGS= --3.0V Drain Current, ID -- A --25 VDS= --10V Single pulse 5V . --3 0 0 --0.5 --1.0 --1.5 --2.0 °C .0V --10 .0V -8. 0V -6. 0V --4 .0 V Tc=25°C Single pulse --30 ID -- VGS --60 25°C ID -- VDS --35 Drain Current, ID -- A S --2 5 P.G --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V --4.0 --4.5 IT15602 No. A1755-2/4 ATP113 RDS(on) -- VGS Single pulse ID= --18A 50 --9A 40 --5A 30 20 10 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 = Tc 7 --2 75 °C 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 5 7 2 100 7 5 tr 3 2 5 7 --1.0 2 3 5 7 --10 2 3 VGS -- Qg 5 7 --10 f=1MHz Ciss 7 5 3 Coss --5 --4 --3 3 2 --1 3 2 50 60 IT15609 --20 --30 --40 --50 IDP= --105A (PW≤10μs) ID= --35A 1m 10 s 10 ms 0 m DC s op era tio n 10 --60 IT15608 ASO 3 2 --1.0 7 5 Total Gate Charge, Qg -- nC --10 --10 7 5 --2 40 0 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A --6 30 IT15606 1000 --100 7 5 20 150 IT15604 2 3 2 --7 10 125 Ciss, Coss, Crss -- VDS IT15607 VDS= --30V ID= --35A 0 100 VGS=0V Single pulse --1.0 7 5 3 2 --0.1 7 5 3 2 100 7 --8 0 75 Crss Drain Current, ID -- A --9 50 2 td(on) --10 25 3 tf 3 0 IS -- VSD --100 7 5 3 2 --10 7 5 3 2 7 td(off) 2 --25 5 3 10 7 --0.1 10 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 0 --0.01 7 5 3 2 --0.001 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 --1.3 VDD= --30V VGS= --10V 7 Gate-to-Source Voltage, VGS -- V 3 --1 I = .0V, D = --1 VGS IT15605 SW Time -- ID 1000 20 5°C C 5° 10 9A = -, ID V 5 4. = -V GS 8A Tc= 7 °C 25 2 = -VGS 30 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 5A = -, ID 4.0V 40 0 --50 VDS= --10V Single pulse 5 50 IT15603 | yfs | -- ID 7 60 25° C --25 °C 60 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc 70 Tc=25°C Single pulse Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 70 10 μs 0μ s Operation in this area is limited by RDS(on). Tc=25°C Single pulse --0.1 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 --100 IT15610 No. A1755-3/4 ATP113 PD -- Tc 50 40 30 20 10 0 0 20 40 60 80 100 EAS -- Ta 120 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 60 120 Case Temperature, Tc -- °C 140 160 IT15611 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C 175 IT15179 Note on usage : Since the ATP113 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No. A1755-4/4