Ordering number : ENA1820 BMS4007 N-Channel Power MOSFET http://onsemi.com 75V, 60A, 7.8mΩ, TO-220ML(LS) Features • • • ON-resistance RDS(on)=6mΩ (typ.) Input capacitance Ciss=9700pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 75 PW≤10μs, duty cycle≤1% V ±20 V 60 A 240 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 299 mJ 48 A Avalanche Current *2 Tc=25°C Note : *1 VDD=48V, L=100μH, IAV=48A (Fig.1) *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7525-002 • Package : TO-220ML(LS) • JEITA, JEDEC : SC-67, SOT-186A • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine 10.0 4.5 2.8 Marking Electrical Connection 2 16.0 7.2 3.5 3.2 MS4007 3.6 LOT No. 1 1.6 14.0 1.2 3 0.75 1 2 3 2.4 0.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source TO-220ML(LS) Semiconductor Components Industries, LLC, 2013 July, 2013 82510QA TK IM TC-00002454 No. A1820-1/5 BMS4007 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max 75 Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=75V, VGS=0V Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=30A Static Drain-to-Source On-State Resistance RDS(on) ID=30A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance V 10 μA ±10 μA 2 4 110 V S 6 7.8 mΩ 9700 pF 540 pF Crss 360 pF Turn-ON Delay Time td(on) 100 ns Rise Time tr 180 ns Turn-OFF Delay Time td(off) 460 ns Fall Time tf 160 ns Total Gate Charge Qg 160 nC Gate-to-Source Charge Qgs 40 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=60A, VGS=0V 0.9 Reverse Recovery Time trr Qrr See Fig.3 70 ns 183 nC Reverse Recovery Charge VDS=20V, f=1MHz See Fig.2 VDS=48V, VGS=10V, ID=60A 40 IS=60A, VGS=0V, di/dt=100A/μs Fig.1 Avalanche Resistance Test Circuit D 10V 0V L VDD=48V VIN ID=30A RL=1.6Ω VIN G BMS4007 S 50Ω V Fig.2 Switching Time Test Circuit ≥50Ω 10V 0V nC 1.2 VDD D PW=10μs D.C.≤1% VOUT G BMS4007 P.G 50Ω S Fig.3 Reverse Recovery Time Test Circuit BMS4007 D L G S VDD Driver MOSFET No. A1820-2/5 BMS4007 ID -- VDS V 10V 6V VDS=10V 40 60 40 25 °C 20 20 VGS=4V 0.6 0.8 1.0 1.2 1.4 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=30A Single pulse 16 14 12 10 Tc=75°C 8 25°C 6 --25°C 4 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V C 5° = Tc --2 °C 75 10 7 5 2 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 100 VDD=48V VGS=10V td(off) 2 tf td(on) 100 tr 5 0.1 5.5 6.0 IT15897 A 6 4 2 --25 0 25 50 75 100 125 150 IT15899 IS -- VSD VGS=0V Single pulse 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT15901 Ciss, Coss, Crss -- VDS f=1MHz 2 Ciss 7 5 3 2 1000 Coss Crss 7 5 7 5.0 =30 , ID V 0 =1 V GS 8 10000 3 4.5 10 3 5 4.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 3.5 12 IT15900 SW Time -- ID 1000 3.0 Case Temperature, Tc -- °C 3 1.0 0.1 2.5 Single pulse 3 2 °C 25 2 2.0 RDS(on) -- Tc 0 --50 10 100 3 1.5 14 VDS=10V 7 5 1.0 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 0.5 IT15922 | yfs | -- ID 3 0 IT15896 RDS(on) -- VGS 18 0 1.6 --25° C 0.4 5°C 25°C 0.2 Tc= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 C 60 80 --25° 80 Tc=7 5°C Drain Current, ID -- A 100 15 Drain Current, ID -- A 100 ID -- VGS 120 Tc=25°C 8V 120 3 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT15902 2 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT15903 No. A1820-3/5 BMS4007 VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 VDS=48V ID=60A 7 6 5 4 3 1 0 50 100 150 200 Total Gate Charge, Qg -- nC 1.0 0.5 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % IT15906 EAS -- Ta 120 160 1m 10 s 10 ms ope 0m rat s ion Operation in this area is limited by RDS(on). 1.0 7 5 3 2 2 3 5 7 10 2 3 5 7 100 2 IT15905 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.5 0 DC 10 7 5 3 2 10μ s 0μ s 10 ID=60A PD -- Tc 35 2.0 0 10 7 5 3 2 IT15904 PD -- Ta 2.5 IDP=240A (PW≤10μs) 0.1 7 5 3 Tc=25°C 2 Single pulse 0.01 2 3 5 7 1.0 0.1 2 0 ASO 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15907 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1820-4/5 BMS4007 Note on usage : Since the BMS4007 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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