BFL4007 Ordering number : ENA1689 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4007 General-Purpose Switching Device Applications Features • • Reverse recovery time trr=95ns (typ) Input capacitance Ciss=1200pF (typ) • • ON-resistance RDS(on)=0.52Ω (typ) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Unit 600 V ±30 V A IDc*1 Limited only by maximum temperature Tch=150°C 14 IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 8.7 A PW≤10μs, duty cycle≤1% 49 A Source-to-Drain Diode Forward Current (DC) IDP IS 14 A Source-to-Drain Diode Forward Current (Pulse) ISP PW≤10μs, duty cycle≤1% Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation PD Tc=25°C (SANYO’s ideal heat dissipation condition*)3 49 A 2.0 W 40 W Note : *1 Shows chip capability Continued on next page. *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Package Dimensions Product & Package Information unit : mm (typ) 7509-002 • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100/bag, 50/magazine 4.5 10.0 Marking 2.8 FL4007 0.6 16.1 16.0 7.2 3.5 3.2 0.75 2.4 1 2 3 2.55 LOT No. 1.2 14.0 3.6 0.9 1.2 2.55 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) http://semicon.sanyo.com/en/network 60210QB TK IM TC-00002337 No. A1689-1/5 BFL4007 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 215 mJ 8.5 A Avalanche Current *5 Note : *4 VDD=99V, L=5mH, IAV=8.5A (Fig.1) *5 L≤5mH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Ratings Conditions min typ Unit max 600 ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA V 100 μA ±100 nA 3 5 4.3 VDS=10V, ID=7A ID=7A, VGS=10V 8.5 V S 0.52 0.68 Ω VDS=30V, f=1MHz VDS=30V, f=1MHz 1200 pF 220 pF 43 pF td(on) tr VDS=30V, f=1MHz See Fig.2 27 ns See Fig.2 72 ns td(off) tf See Fig.2 122 ns See Fig.2 48 ns nC Total Gate Charge Qg VDS=200V, VGS=10V, ID=14A 46 Gate-to-Source Charge Qgs 8.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=14A VDS=200V, VGS=10V, ID=14A 26.4 nC Diode Forward Voltage VSD trr IS=14A, VGS=0V See Fig.3 1.1 Reverse Recovery Time 95 ns Reverse Recovery Charge Qrr IS=14A, VGS=0V, di/dt=100A/μs 250 nC Fig.1 Avalanche Resistance Test Circuit D ≥50Ω RG 10V 0V 50Ω V Fig.2 Switching Time Test Circuit 10V 0V L VIN G VDD=200V ID=7A RL=28.6Ω VIN S 1.5 D PW=10μs D.C.≤0.5% BFL4007 VDD VOUT G BFL4007 P.G RGS=50Ω S No. A1689-2/5 BFL4007 Fig.3 trr Reverse Recovery Resistance Test Circuit D BFL4007 500μH G S VDD=50V Driver MOSFET ID -- VDS 15V V 10 25 20 15 10 6V 5 5 10 15 20 25 1.6 1.4 1.2 1.0 Tc=75°C 0.6 25°C 0.4 --25°C 0.2 3 5 7 9 11 13 Gate-to-Source Voltage, VGS -- V C 5° 5 = Tc 3 --2 °C 75 2 1.0 7 8 10 12 14 16 18 20 IT15478 1.4 1.2 1.0 A =7 , ID 0V 0.8 1 S= VG 0.6 0.4 0.2 --25 0 25 50 75 100 125 150 IT15480 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 5 3 0.1 6 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 4 3 2 °C 25 10 2 RDS(on) -- Tc 0 --50 15 VDS=10V 2 0 IT15479 | yfs | -- ID 3 10 1.6 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.8 0 15 Gate-to-Source Voltage, VGS -- V ID=7A 0.8 75°C 20 IT15477 RDS(on) -- VGS 2.0 25°C 25 0 30 Drain-to-Source Voltage, VDS -- V 30 5°C 25°C --25 °C 0 Tc= --25°C 5 VGS=5V 0 VDS=20V 35 8V Drain Current, ID -- A Drain Current, ID -- A 30 ID -- VGS 40 Tc=25°C VGS=20V Tc= 7 35 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT15481 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 1.6 IT15482 No. A1689-3/5 BFL4007 SW Time -- ID 1000 5 2 td (off) 100 tf 7 tr 5 3 td(on) 2 2 3 5 7 1.0 2 3 5 7 10 2 100 7 5 Crss 3 5 Drain Current, ID -- A 8 7 6 5 4 3 2 20 30 40 1.0 0.5 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C EAS -- Ta 120 160 IT15487 35 40 45 10 7 5 3 2 1m 10 s m DC 100 s op ms era tio n IDpack(*2)=8.7A 1.0 7 5 3 2 50 IT15484 10 10 0μ s μs Operation in this area is limited by RDS(on). 0.1 7 5 3 2 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.5 30 IDc(*1)=14A PD -- Tc 45 2.0 25 IDP=49A (PW≤10μs) IT15485 PD -- Ta 0 20 ASO 0.01 0.1 50 Total Gate Charge, Qg -- nC 2.5 15 2 100 7 5 3 2 10 10 Drain-to-Source Voltage, VDS -- V VGS -- Qg 0 5 0 IT15483 1 Allowable Power Dissipation, PD -- W Coss 2 10 VDS=200V ID=14A 9 0 3 2 10 0 1000 7 5 3 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 2 Ciss 3 10 0.1 Avalanche Energy derating factor -- % f=1MHz 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 Ciss, Coss, Crss -- VDS 5 VDD=200V VGS=10V 5 71000 IT15486 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15488 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1689-4/5 BFL4007 Note on usage : Since the BFL4007 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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