BMS3003 Ordering number : ENA1907 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET BMS3003 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=5.0mΩ (typ.) Input capacitance Ciss=13200pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) PW≤10μs, duty cycle≤1% Unit --60 V ±20 V --78 A --312 A 2.0 W Allowable Power Dissipation PD 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 420 mJ --60 A Avalanche Current *2 Tc=25°C Note : *1 VDD=--36V, L=100μH, IAV=--60A (Fig.1) *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7525-002 • Package : TO-220ML(LS) • JEITA, JEDEC : SC-67, SOT-186A • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine 10.0 4.5 2.8 Marking Electrical Connection 2 16.0 7.2 3.5 3.2 MS3003 3.6 LOT No. 1 1.6 14.0 1.2 3 0.75 1 2 3 2.4 0.7 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS) http://semicon.sanyo.com/en/network D2210QA TKIM TC-00002546 No. A1907-1/5 BMS3003 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--60V, VGS=0V typ Unit max --60 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--39A 130 RDS(on)1 ID=--39A, VGS=--10V 5.0 6.5 mΩ RDS(on)2 ID=--39A, VGS=--4V 6.5 9.0 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss --1.2 --10 μA ±10 μA --2.6 VDS=--20V, f=1MHz V S 13200 pF 1300 pF Reverse Transfer Capacitance Crss 950 pF Turn-ON Delay Time td(on) 90 ns Rise Time tr 360 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=--78A, VGS=0V Reverse Recovery Time trr See Fig.3 150 ns Reverse Recovery Charge Qrr IS=--78A, VGS=0V, di/dt=--100A/μs 470 nC See Fig.2 ns 680 ns 285 nC 35 nC VDS=--36V, VGS=--10V, ID=--78A 70 Fig.1 Avalanche Resistance Test Circuit D 0V --10V L --1.5 V VDD= --36V VIN ID= --39A RL=0.92Ω VIN BMS3003 S 50Ω nC --0.95 Fig.2 Switching Time Test Circuit ≥50Ω RG G 0V --10V 1200 VDD D PW=10μs D.C.≤1% VOUT G P.G BMS3003 50Ω S Fig.3 Reverse Recovery Time Test Circuit BMS3003 D L G S VDD Driver MOSFET No. A1907-2/5 BMS3003 --60 --40 --80 --60 --40 --20 --20 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --39A Single pulse 14 12 10 8 Tc=75°C 6 25°C --25°C 4 2 0 0 --1 --2 --3 --4 --5 --6 --7 --8 2 °C °C -25 =c T C 75° 3 2 10 7 5 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 3 2 tr td(on) 100 7 5 3 9A = --3 V, I D 4 9A = = --3 VGS 0V, I D 1 = VGS 8 6 4 2 --25 0 25 50 75 100 125 150 IT16242 IS -- VSD VGS=0V Single pulse --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 100000 7 5 --1.4 IT16244 f=1MHz Ciss 3 2 Coss 1000 7 5 Crss 3 2 2 10 --0.1 --5.0 IT16240 10000 7 5 tf 3 2 --4.5 10 --0.1 7 5 3 2 --0.01 Ciss, Coss, Crss -- pF 1000 7 5 --4.0 12 3 2 td(off) --3.5 Single pulse --1000 7 5 3 2 5 7 --100 VDD= --36V VGS= --10V --3.0 14 IT16243 SW Time -- ID 10000 7 5 --2.5 Case Temperature, Tc -- °C 2 3 --2.0 RDS(on) -- Tc 0 --50 3 2 --1.5 16 --10 3 1.0 --0.1 Switching Time, SW Time -- ns --9 VDS= --10V 25 --1.0 IT16241 | yfs | -- ID 100 7 5 --0.5 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 1000 7 5 0 IT16239 RDS(on) -- VGS 16 0 --1.4 Tc= 75°C 25°C 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 25° C VGS= --3V --25°C --80 --100 Tc=7 5°C --25 °C Drain Current, ID -- A --100 --120 75 ° C --140 0V --120 VDS= --10V 25° C V --4 --1 Drain Current, ID -- A --140 ID -- VGS --160 --6 V --8 V Tc=25°C Tc= --2 5°C ID -- VDS --160 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT16245 100 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT16246 No. A1907-3/5 BMS3003 VGS -- Qg --10 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --100 7 5 3 2 --7 --6 --5 --4 --3 --1 0 50 100 150 200 250 Total Gate Charge, Qg -- nC PD -- Ta 1.0 0.5 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C EAS -- Ta 120 140 160 IT16249 10 μs Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V PD -- Tc 45 1.5 0μ s Operation in this area is limited by RDS(on). IT16247 2.0 0 Avalanche Energy derating factor -- % 300 10 1m s 1 10 0ms 0m DC s op era tio n ID= --78A --0.1 --0.1 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 IDP= --312A (PW≤10μs) --10 7 5 3 2 --1.0 7 5 3 2 --2 0 ASO --1000 7 5 3 2 VDS= --36V ID= --78A 5 7 --100 IT16248 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16250 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16251 No. A1907-4/5 BMS3003 Note on usage : Since the BMS3003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2010. Specifications and information herein are subject to change without notice. PS No. A1907-5/5