BFL4026 Ordering number : ENA1797 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4026 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)=2.8Ω (typ.) Input capacitance Ciss=650pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 Gate-to-Source Voltage VGSS ±30 V 5 A A Limited only by maximum temperature Tch=150°C IDc*1 Drain Current (DC) Drain Current (Pulse) V IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 3.5 IDP PW≤10μs, duty cycle≤1% 10 A 2.0 W Allowable Power Dissipation PD 35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 140 mJ Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 5 A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=10mH, IAV=5A (Fig.1) *5 L≤10mH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7509-002 • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine 4.5 10.0 2.8 Marking Electrical Connection 7.2 3.5 3.2 FL4026 0.6 16.1 16.0 2 LOT No. 1.2 14.0 3.6 0.9 1.2 0.75 2.4 1 2 3 2.55 2.55 1 0.7 1 : Gate 2 : Drain 3 : Source 3 SANYO : TO-220FI(LS) http://semicon.sanyo.com/en/network 70710QB TK IM TC-00002399 No. A1797-1/5 BFL4026 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=720V, VGS=0V min typ Unit max 900 V 1.0 mA ±100 nA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=20V, ID=2.5A Static Drain-to-Source On-State Resistance RDS(on) ID=2.5A, VGS=10V 2.8 Input Capacitance Ciss VDS=30V, f=1MHz 650 pF Output Capacitance Coss VDS=30V, f=1MHz 100 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 35 pF Turn-ON Delay Time td(on) See Fig.2 14 ns Rise Time tr td(off) See Fig.2 37 ns ns Turn-OFF Delay Time Fall Time Total Gate Charge 2.0 4.0 1.4 2.8 V S 3.6 Ω See Fig.2 117 tf Qg See Fig.2 39 ns VDS=200V, VGS=10V, ID=5A 33 nC 5.3 nC 16.5 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=5A VDS=200V, VGS=10V, ID=5A Diode Forward Voltage VSD trr IS=5A, VGS=0V See Fig.3 0.85 Reverse Recovery Time 720 ns Reverse Recovery Charge Qrr IS=5A, VGS=0V, di/dt=100A/μs 4700 nC Fig.1 Avalanche Resistance Test Circuit D ≥50Ω RG 10V 0V V Fig.2 Switching Time Test Circuit 10V 0V L VIN VDD=200V ID=2.5A RL=80Ω VIN G S 1.2 D BFL4026 VDD 50Ω VOUT PW=10μs D.C.≤0.5% G BFL4026 P.G RGS=50Ω S Fig.3 Reverse Recovery Time Test Circuit BFL4026 D 500μH G S VDD=50V Driver MOSFET No. A1797-2/5 BFL4026 ID -- VDS VDS=20V 9 7V 6 6V 4 3 2 5V VGS=4V 5 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 4 3 25°C 2 --25°C 1 3 4 5 6 7 8 9 10 11 12 13 7 5 7 5 3 2 0.1 7 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 7 =1 S 4 VG 3 2 1 --25 0 25 50 75 100 125 150 IT15764 IS -- VSD VGS=0V Single pulse 3 2 1.0 7 5 3 2 0.1 7 5 100 7 5 tf 3 tr 2 td(on) 0.8 1.0 1.2 IT15766 f=1MHz 3 2 Ciss, Coss, Crss -- pF td (off) 0.6 Ciss, Coss, Crss -- VDS 5 3 2 0.4 Diode Forward Voltage, VSD -- V VDD=200V VGS=10V 5 Switching Time, SW Time -- ns .5A =2 ID , 0V 5 0.01 0.2 5 7 10 IT15765 Drain Current, ID -- A 1000 7 5 Ciss 3 2 Co ss 100 7 5 Cr ss 3 2 10 7 0.1 6 3 2 5 3 0.01 7 10 7 5 5°C --2 = Tc °C 75 1.0 12 IT15762 8 2 °C 25 2 10 Case Temperature, Tc -- °C VDS=20V 3 8 Single pulse IT15763 | yfs | -- ID 6 RDS(on) -- Tc 0 --50 15 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 14 4 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Tc=75°C 2 2 9 6 5 0 10 7 0 0 50 ID=2.5A Single pulse 8 2 IT15761 RDS(on) -- VGS 9 3 5°C 0 75°C 4 1 1 0 25°C 5 --25° C 5 6 25°C 7 Tc= --25°C Drain Current, ID -- A Drain Current, ID -- A 7 15V 10V 8 ID -- VGS 8 Tc=25°C Tc= 7 10 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT15767 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT15768 No. A1797-3/5 BFL4026 VGS -- Qg 10 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 5 4 1 3 2 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC 0.5 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT15771 EAS -- Ta 120 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.0 20 2 3 PD -- Tc 40 1.5 0 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition Tc=25°C Single pulse 0.01 0.1 40 2.0 0 Operation in this area is limited by RDS(on). IT15769 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 3 2 2 0 1m s IDpack(*2)=3.5A 1.0 7 5 0.1 7 5 3 0 Avalanche Energy derating factor -- % 3 2 s 0μ 6 IDc(*1)=5A s m n 10 ms atio 0 r 10 ope DC 7 IDP=10A (PW≤10μs) 10 8 10 7 5 μs 10 9 ASO 2 VDS=200V ID=5A 5 71000 2 IT15770 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15772 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1797-4/5 BFL4026 Note on usage : Since the BFL4026 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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