MKP1V120 Series Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Features • • • • • • • • High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators Used to Trigger Gates of SCR’s and Triacs Indicates UL Registered − File #E210057 These are Pb−Free Devices* http://onsemi.com SIDACS( ) 0.9 AMPERES RMS 120 − 240 VOLTS MT1 MT2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage VDRM, (Sine Wave, 50 to 60 Hz, TJ = − 40 to 125°C) VRRM MKP1V120, MKP1V130, MKP1V160 MKP1V240 Value Unit "90 "180 On-State Current RMS (TL = 80°C, Lead Length = 3/8″, All Conduction Angles) IT(RMS) "0.9 A Peak Non−repetitive Surge Current (60 Hz One Cycle Sine Wave, TJ = 125°C) ITSM "4.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Symbol Max Unit RqJL 40 °C/W TL 260 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead Lead Length = 3/8″ Lead Solder Temperature (Lead Length w 1/16″ from Case, 10 s Max) AXIAL LEAD CASE 59 STYLE 2 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM A MKP 1Vxx0 YYWW G G A = Assembly Location MKP1Vxx0 = Device Number x= 12, 13, 16 or 24 YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 August, 2012 − Rev. 12 1 See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: MKP1V120/D MKP1V120 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM − − 5.0 mA 110 120 150 220 − − − − 130 140 170 250 OFF CHARACTERISTICS Repetitive Peak Off−State Current TJ = 25°C (50 to 60 Hz Sine Wave) VDRM = 90 V, MKP1V120, MKP1V130 and MKP1V160 VDRM = 180 V, MKP1V240 ON CHARACTERISTICS Breakover Voltage IBO = 35 mA MKP1V120 35 mA MKP1V130 200 mA MKP1V160 35 mA MKP1V240 VBO V Peak On−State Voltage (ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%) VTM − 1.3 1.5 V Dynamic Holding Current (Sine Wave, 50 to 60 Hz, RL = 100 Ohm) IH − − 100 mA Switching Resistance (Sine Wave, 50 to 60 Hz) RS 0.1 − − kW di/dt − 120 − A/ms DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of On−State Current, Critical Damped Waveform Circuit (IPK = 130 Amps, Pulse Width = 10 msec) ORDERING INFORMATION Device Package* Shipping† MKP1V120RLG 5000 / Tape & Reel MKP1V130RLG 5000 / Tape & Reel MKP1V160G MKP1V160RLG DO−41, Axial Lead MKP1V240G 1000 Units / Bulk 5000 / Tape & Reel 1000 Units / Bulk MKP1V240RLG 5000 / Tape & Reel *This package is inherently Pb−Free. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MKP1V120 Series Voltage Current Characteristic of SIDAC (Bidirectional Device) + Current ITM Symbol Parameter IDRM Off State Leakage Current VDRM Off State Repetitive Blocking Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage ITM Peak on State Current VTM IH IS I(BO) + Voltage VDRM 140 V(BO) (V (BO) – V S) (I S – I (BO)) 1.0 130 3/ ″ 8 120 IT(RMS) , ON-STATE CURRENT (AMPS) TL 3/ ″ 8 110 TJ = 125°C Sine Wave Conduction Angle = 180°C 100 90 80 70 60 50 TJ = 125°C Sine Wave Conduction Angle = 180°C 0.8 Assembled in PCB Lead Length = 3/8″ 0.6 0.4 0.2 40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 IT(RMS), ON-STATE CURRENT (AMPS) TA, MAXIMUM AMBIENT TEMPERATURE (°C) Figure 1. Maximum Lead Temperature Figure 2. Maximum Ambient Temperature 10 7.0 5.0 140 1.25 3.0 2.0 TJ = 25°C PRMS , POWER DISSIPATION (WATTS) TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C) VS IDRM RS + I T , INSTANTANEOUS ON-STATE CURRENT (AMPS) Slope = RS 125°C 1.0 0.7 0.5 0.3 0.2 TJ = 25°C Conduction Angle = 180°C 1.00 0.75 0.50 0.25 0.1 0 1.0 2.0 3.0 4.0 0 5.0 0.2 0.4 0.6 0.8 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) IT(RMS), ON-STATE CURRENT (AMPS) Figure 3. Typical On−State Voltage Figure 4. Typical Power Dissipation http://onsemi.com 3 1.0 MKP1V120 Series r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) THERMAL CHARACTERISTICS 1.0 0.7 0.5 The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: 0.3 0.2 ZqJL(t) = RqJL • r(t) DTJL = Ppk RqJL[r(t)] tp TIME where: DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 10 50 100 TJ = TL + DTJL 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) IH , HOLDING CURRENT (NORMALIZED) 1.4 1.0 0.9 0.8 -60 -40 -20 0 20 40 60 100 80 120 1.2 1.0 0.8 0.6 0.4 -60 140 -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Breakover Voltage Figure 7. Typical Holding Current 100 IPK, PEAK CURRENT (AMPS) VBO , BREAKOVER VOLTAGE (NORMALIZED) Figure 5. Thermal Response 10 IPK 10% tw 1.0 0.1 1.0 10 tw, PULSE WIDTH (ms) Figure 8. Pulse Rating Curve http://onsemi.com 4 100 120 140 MKP1V120 Series PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U B K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. D F A POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) DIM A B D F K F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− STYLE 2: NO POLARITY ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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