MKP1V120 D

MKP1V120 Series
Sidac High Voltage
Bidirectional Triggers
Bidirectional devices designed for direct interface with the ac power
line. Upon reaching the breakover voltage in each direction, the device
switches from a blocking state to a low voltage on−state. Conduction
will continue like a Triac until the main terminal current drops below
the holding current. The plastic axial lead package provides high pulse
current capability at low cost. Glass passivation insures reliable
operation.
Features
•
•
•
•
•
•
•
•
High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators
Used to Trigger Gates of SCR’s and Triacs
Indicates UL Registered − File #E210057
These are Pb−Free Devices*
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SIDACS( )
0.9 AMPERES RMS
120 − 240 VOLTS
MT1
MT2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage
VDRM,
(Sine Wave, 50 to 60 Hz, TJ = − 40 to 125°C) VRRM
MKP1V120, MKP1V130, MKP1V160
MKP1V240
Value
Unit
"90
"180
On-State Current RMS (TL = 80°C,
Lead Length = 3/8″, All Conduction Angles)
IT(RMS)
"0.9
A
Peak Non−repetitive Surge Current
(60 Hz One Cycle Sine Wave, TJ = 125°C)
ITSM
"4.0
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Symbol
Max
Unit
RqJL
40
°C/W
TL
260
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead
Lead Length = 3/8″
Lead Solder Temperature
(Lead Length w 1/16″ from Case, 10 s Max)
AXIAL LEAD
CASE 59
STYLE 2
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
A
MKP
1Vxx0
YYWW G
G
A
= Assembly Location
MKP1Vxx0 = Device Number
x= 12, 13, 16 or 24
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 12
1
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
MKP1V120/D
MKP1V120 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
IDRM
−
−
5.0
mA
110
120
150
220
−
−
−
−
130
140
170
250
OFF CHARACTERISTICS
Repetitive Peak Off−State Current TJ = 25°C
(50 to 60 Hz Sine Wave)
VDRM = 90 V, MKP1V120, MKP1V130 and MKP1V160
VDRM = 180 V, MKP1V240
ON CHARACTERISTICS
Breakover Voltage
IBO = 35 mA MKP1V120
35 mA MKP1V130
200 mA MKP1V160
35 mA MKP1V240
VBO
V
Peak On−State Voltage
(ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%)
VTM
−
1.3
1.5
V
Dynamic Holding Current
(Sine Wave, 50 to 60 Hz, RL = 100 Ohm)
IH
−
−
100
mA
Switching Resistance
(Sine Wave, 50 to 60 Hz)
RS
0.1
−
−
kW
di/dt
−
120
−
A/ms
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of On−State Current,
Critical Damped Waveform Circuit
(IPK = 130 Amps, Pulse Width = 10 msec)
ORDERING INFORMATION
Device
Package*
Shipping†
MKP1V120RLG
5000 / Tape & Reel
MKP1V130RLG
5000 / Tape & Reel
MKP1V160G
MKP1V160RLG
DO−41, Axial Lead
MKP1V240G
1000 Units / Bulk
5000 / Tape & Reel
1000 Units / Bulk
MKP1V240RLG
5000 / Tape & Reel
*This package is inherently Pb−Free.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MKP1V120 Series
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
ITM
Symbol
Parameter
IDRM
Off State Leakage Current
VDRM
Off State Repetitive Blocking Voltage
VBO
Breakover Voltage
IBO
Breakover Current
IH
Holding Current
VTM
On State Voltage
ITM
Peak on State Current
VTM
IH
IS
I(BO)
+ Voltage
VDRM
140
V(BO)
(V (BO) – V S)
(I S – I (BO))
1.0
130
3/ ″
8
120
IT(RMS) , ON-STATE CURRENT (AMPS)
TL
3/ ″
8
110
TJ = 125°C
Sine Wave
Conduction Angle = 180°C
100
90
80
70
60
50
TJ = 125°C
Sine Wave
Conduction Angle = 180°C
0.8
Assembled in PCB
Lead Length = 3/8″
0.6
0.4
0.2
40
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120
IT(RMS), ON-STATE CURRENT (AMPS)
TA, MAXIMUM AMBIENT TEMPERATURE (°C)
Figure 1. Maximum Lead Temperature
Figure 2. Maximum Ambient Temperature
10
7.0
5.0
140
1.25
3.0
2.0
TJ = 25°C
PRMS , POWER DISSIPATION (WATTS)
TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C)
VS
IDRM
RS +
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)
Slope = RS
125°C
1.0
0.7
0.5
0.3
0.2
TJ = 25°C
Conduction Angle = 180°C
1.00
0.75
0.50
0.25
0.1
0
1.0
2.0
3.0
4.0
0
5.0
0.2
0.4
0.6
0.8
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
IT(RMS), ON-STATE CURRENT (AMPS)
Figure 3. Typical On−State Voltage
Figure 4. Typical Power Dissipation
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3
1.0
MKP1V120 Series
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
THERMAL CHARACTERISTICS
1.0
0.7
0.5
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady-state conditions are achieved.
Using the measured value of TL, the junction
temperature may be determined by:
0.3
0.2
ZqJL(t) = RqJL • r(t)
DTJL = Ppk RqJL[r(t)]
tp
TIME
where:
DTJL = the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(tp) = normalized value of transient resistance at time tp.
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
10
50
100
TJ = TL + DTJL
200
500
1.0 k
2.0 k
5.0 k
10 k
t, TIME (ms)
IH , HOLDING CURRENT (NORMALIZED)
1.4
1.0
0.9
0.8
-60
-40
-20
0
20
40
60
100
80
120
1.2
1.0
0.8
0.6
0.4
-60
140
-40
-20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Voltage
Figure 7. Typical Holding Current
100
IPK, PEAK CURRENT (AMPS)
VBO , BREAKOVER VOLTAGE (NORMALIZED)
Figure 5. Thermal Response
10
IPK
10%
tw
1.0
0.1
1.0
10
tw, PULSE WIDTH (ms)
Figure 8. Pulse Rating Curve
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4
100
120
140
MKP1V120 Series
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59−10
ISSUE U
B
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
D
F
A
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
DIM
A
B
D
F
K
F
K
INCHES
MIN
MAX
0.161 0.205
0.079 0.106
0.028 0.034
−−− 0.050
1.000
−−−
MILLIMETERS
MIN
MAX
4.10
5.20
2.00
2.70
0.71
0.86
−−−
1.27
25.40
−−−
STYLE 2:
NO POLARITY
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MKP1V120/D