MKP9V160 D

MKP9V160
Preferred Device
Sidac High Voltage
Bidirectional Triggers
Bidirectional devices designed for direct interface with the ac power
line. Upon reaching the breakover voltage in each direction, the device
switches from a blocking state to a low voltage on−state. Conduction
will continue like a Triac until the main terminal current drops below
the holding current. The plastic axial lead package provides high pulse
current capability at low cost. Glass passivation insures reliable
operation.
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SIDACS ( )
0.9 AMPS RMS, 160 VOLTS
Features
•
•
•
•
•
•
•
•
High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators
Used to Trigger Gates of SCR’s and Triacs
Indicates UL Registered − File #E116110
Pb−Free Package is Available
MT1
MT2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Peak Repetitive Off−State Voltage
(Sine Wave, 50 to 60 Hz, TJ = − 40 to 125°C)
VDRM,
VRRM
"90
On-State Current RMS
(TL = 80°C, Lead Length = 3/8″″
All Conduction Angles)
IT(RMS)
"0.9
A
ITSM
"4.0
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
Symbol
Max
Unit
RqJL
40
°C/W
TL
260
°C
Peak Non−repetitive Surge Current
(60 Hz One Cycle Sine Wave, TJ = 125°C)
DO−41
AXIAL LEAD
CASE 59
STYLE 2
Unit
V
MARKING DIAGRAM
A
MKP
9V160
YYWW G
G
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction−to−Lead
Lead Length = 3/8″
Lead Solder Temperature
(Lead Length w 1/16″ from Case, 10 s Max)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MKP9V160RL
Axial Lead*
5000 Tape & Reel
MKP9V160RLG
Axial Lead*
5000 Tape & Reel
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 1
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MKP9V160/D
MKP9V160
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
IDRM
−
−
5.0
mA
Breakover Voltage
IBO = 200 mA
VBO
150
−
170
V
Peak On−State Voltage
(ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%)
VTM
−
1.3
1.5
V
Dynamic Holding Current
(Sine Wave, 50 to 60 Hz, RL = 100 W)
IH
−
−
100
mA
Switching Resistance
(Sine Wave, 50 to 60 Hz)
RS
0.1
−
−
kW
di/dt
−
120
−
A/ms
OFF CHARACTERISTICS
TJ = 25°C
VDRM = 90 V
Repetitive Peak Off−State Current
(50 to 60 Hz Sine Wave)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of On−State Current,
Critical Damped Waveform Circuit
(IPK = 130 A, Pulse Width = 10 msec)
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
Symbol
Parameter
IDRM
Off State Leakage Current
VDRM
Off State Repetitive Blocking Voltage
VBO
Breakover Voltage
IBO
Breakover Current
IH
Holding Current
VTM
On State Voltage
ITM
Peak on State Current
ITM
VTM
Slope = RS
IH
IS
IDRM
VDRM
RS +
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2
VS
I(BO)
+ Voltage
V(BO)
(V (BO) – V S)
(I S – I (BO))
140
1.0
130
3/ ″
8
120
IT(RMS) , ON−STATE CURRENT (AMPS)
TL
3/ ″
8
110
TJ = 125°C
Sine Wave
Conduction Angle = 180°C
100
90
80
70
60
50
TJ = 125°C
Sine Wave
Conduction Angle = 180°C
0.8
Assembled in PCB
Lead Length = 3/8″
0.6
0.4
0.2
40
0
0.2
0.4
0.6
1.0
0.8
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120
IT(RMS), ON−STATE CURRENT (AMPS)
TA, MAXIMUM AMBIENT TEMPERATURE (°C)
Figure 1. Maximum Lead Temperature
Figure 2. Maximum Ambient Temperature
10
7.0
5.0
140
1.25
3.0
2.0
TJ = 25°C
PRMS , POWER DISSIPATION (WATTS)
I T , INSTANTANEOUS ON−STATE CURRENT (AMPS)
TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C)
MKP9V160
125°C
1.0
0.7
0.5
0.3
0.2
TJ = 25°C
Conduction Angle = 180°C
1.00
0.75
0.50
0.25
0.1
0
2.0
1.0
3.0
5.0
4.0
0
0.2
0.4
0.6
1.0
0.8
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
IT(RMS), ON−STATE CURRENT (AMPS)
Figure 3. Typical On−State Voltage
Figure 4. Typical Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
THERMAL CHARACTERISTICS
1.0
0.7
0.5
0.3
0.2
ZqJL(t) = RqJL • r(t)
DTJL = Ppk RqJL[r(t)]
tp
TIME
where:
DTJL = the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(tp) = normalized value of transient resistance at time tp.
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
t, TIME (ms)
Figure 5. Thermal Response
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3
200
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady−state conditions are achieved.
Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL + DTJL
500
1.0 k
2.0 k
5.0 k
10 k
IH , HOLDING CURRENT (NORMALIZED)
1.4
1.0
0.9
0.8
−60
−40
−20
0
20
40
60
100
80
120
1.2
1.0
0.8
0.6
0.4
−60
140
−40
−20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Voltage
Figure 7. Typical Holding Current
100
IPK, PEAK CURRENT (AMPS)
VBO , BREAKOVER VOLTAGE (NORMALIZED)
MKP9V160
10
IPK
10%
tw
1.0
0.1
1.0
10
tw, PULSE WIDTH (ms)
Figure 8. Pulse Rating Curve
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4
100
120
140
MKP9V160
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59−10
ISSUE U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
B
K
D
DIM
A
B
D
F
K
F
A
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
F
INCHES
MIN
MAX
0.161 0.205
0.079 0.106
0.028 0.034
−−− 0.050
1.000
−−−
MILLIMETERS
MIN
MAX
4.10
5.20
2.00
2.70
0.71
0.86
−−−
1.27
25.40
−−−
STYLE 2:
NO POLARITY
K
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
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ON Semiconductor Website: http://onsemi.com
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For additional information, please contact your
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MKP9V160/D