MKP9V160 Preferred Device Sidac High Voltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on−state. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. http://onsemi.com SIDACS ( ) 0.9 AMPS RMS, 160 VOLTS Features • • • • • • • • High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators Used to Trigger Gates of SCR’s and Triacs Indicates UL Registered − File #E116110 Pb−Free Package is Available MT1 MT2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off−State Voltage (Sine Wave, 50 to 60 Hz, TJ = − 40 to 125°C) VDRM, VRRM "90 On-State Current RMS (TL = 80°C, Lead Length = 3/8″″ All Conduction Angles) IT(RMS) "0.9 A ITSM "4.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Symbol Max Unit RqJL 40 °C/W TL 260 °C Peak Non−repetitive Surge Current (60 Hz One Cycle Sine Wave, TJ = 125°C) DO−41 AXIAL LEAD CASE 59 STYLE 2 Unit V MARKING DIAGRAM A MKP 9V160 YYWW G G THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Lead Lead Length = 3/8″ Lead Solder Temperature (Lead Length w 1/16″ from Case, 10 s Max) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MKP9V160RL Axial Lead* 5000 Tape & Reel MKP9V160RLG Axial Lead* 5000 Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 1 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MKP9V160/D MKP9V160 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM − − 5.0 mA Breakover Voltage IBO = 200 mA VBO 150 − 170 V Peak On−State Voltage (ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%) VTM − 1.3 1.5 V Dynamic Holding Current (Sine Wave, 50 to 60 Hz, RL = 100 W) IH − − 100 mA Switching Resistance (Sine Wave, 50 to 60 Hz) RS 0.1 − − kW di/dt − 120 − A/ms OFF CHARACTERISTICS TJ = 25°C VDRM = 90 V Repetitive Peak Off−State Current (50 to 60 Hz Sine Wave) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of On−State Current, Critical Damped Waveform Circuit (IPK = 130 A, Pulse Width = 10 msec) Voltage Current Characteristic of SIDAC (Bidirectional Device) + Current Symbol Parameter IDRM Off State Leakage Current VDRM Off State Repetitive Blocking Voltage VBO Breakover Voltage IBO Breakover Current IH Holding Current VTM On State Voltage ITM Peak on State Current ITM VTM Slope = RS IH IS IDRM VDRM RS + http://onsemi.com 2 VS I(BO) + Voltage V(BO) (V (BO) – V S) (I S – I (BO)) 140 1.0 130 3/ ″ 8 120 IT(RMS) , ON−STATE CURRENT (AMPS) TL 3/ ″ 8 110 TJ = 125°C Sine Wave Conduction Angle = 180°C 100 90 80 70 60 50 TJ = 125°C Sine Wave Conduction Angle = 180°C 0.8 Assembled in PCB Lead Length = 3/8″ 0.6 0.4 0.2 40 0 0.2 0.4 0.6 1.0 0.8 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 IT(RMS), ON−STATE CURRENT (AMPS) TA, MAXIMUM AMBIENT TEMPERATURE (°C) Figure 1. Maximum Lead Temperature Figure 2. Maximum Ambient Temperature 10 7.0 5.0 140 1.25 3.0 2.0 TJ = 25°C PRMS , POWER DISSIPATION (WATTS) I T , INSTANTANEOUS ON−STATE CURRENT (AMPS) TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (° C) MKP9V160 125°C 1.0 0.7 0.5 0.3 0.2 TJ = 25°C Conduction Angle = 180°C 1.00 0.75 0.50 0.25 0.1 0 2.0 1.0 3.0 5.0 4.0 0 0.2 0.4 0.6 1.0 0.8 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) IT(RMS), ON−STATE CURRENT (AMPS) Figure 3. Typical On−State Voltage Figure 4. Typical Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) THERMAL CHARACTERISTICS 1.0 0.7 0.5 0.3 0.2 ZqJL(t) = RqJL • r(t) DTJL = Ppk RqJL[r(t)] tp TIME where: DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (ms) Figure 5. Thermal Response http://onsemi.com 3 200 The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady−state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL 500 1.0 k 2.0 k 5.0 k 10 k IH , HOLDING CURRENT (NORMALIZED) 1.4 1.0 0.9 0.8 −60 −40 −20 0 20 40 60 100 80 120 1.2 1.0 0.8 0.6 0.4 −60 140 −40 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Breakover Voltage Figure 7. Typical Holding Current 100 IPK, PEAK CURRENT (AMPS) VBO , BREAKOVER VOLTAGE (NORMALIZED) MKP9V160 10 IPK 10% tw 1.0 0.1 1.0 10 tw, PULSE WIDTH (ms) Figure 8. Pulse Rating Curve http://onsemi.com 4 100 120 140 MKP9V160 PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. B K D DIM A B D F K F A POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− STYLE 2: NO POLARITY K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MKP9V160/D