MBD770DWT1G, NSVMBD770DWT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • • • • • Extremely Fast Switching Speed Low Forward Voltage AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Value Unit IF 100 mA IFSM 1 A Reverse Voltage VR 70 V Forward Power Dissipation @ TA = 25°C Derate above 25°C (Note 1) PF 380 3 mW mW/°C −55 to +150 °C Non−Repetitive Peak Forward Surge Current (60 Hz Half Sine) Operating Junction and Storage Temperature Range TJ, Tstg 70 VOLTS SCHOTTKY BARRIER DIODES Anode 1 6 Cathode N/C 2 5 N/C Cathode 3 Symbol Forward Current http://onsemi.com Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR4 @ 100 mm2, 1 oz Cu 4 Anode MARKING DIAGRAM 6 SOT−363 CASE 419B STYLE 6 1 H5 MG G 1 M G = Date Code = Pb−Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBD770DWT1G SOT−363 (Pb−Free) 3000 / Tape & Reel NSVMBD770DWT1G SOT−363 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 1 1 Publication Order Number: MBD770DW/D MBD770DWT1G, NSVMBD770DWT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Total Capacitance (VR = 20 V, f = 1.0 MHz) CT Reverse Leakage (VR = 35 V) IR Forward Voltage (IF = 1.0 mA) VF Forward Voltage (IF = 10 mA) VF −55°C 1 00°C 25°C 75°C 1 0.1 0 0.2 0.4 0.6 70 − − 1.0 − 200 − 500 − 1.0 Unit V pF nA mV V 0.8 1 1.2 1.4 150°C 10000 IR, REVERSE CURRENT (nA) 1 25°C 10 Max 100000 150°C 1000 75°C 100 10 25°C 1 −40°C 0.1 0.01 1.6 1 25°C 1 00°C 0 10 20 30 40 50 60 70 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse Voltage 1.4 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 Min TA = 25°C f = 1 MHz 1.2 1 0.8 0.6 0.4 0.2 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Figure 3. Typical Capacitance http://onsemi.com 2 50 60 80 MBD770DWT1G, NSVMBD770DWT1G PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 M A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 MBD770DWT1G, NSVMBD770DWT1G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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