Dual SCHOTTKY Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six– leaded package. The SOT–363 is ideal for low–power surface mount applications where board space is at a premium, such as portable products. MBD110DWT1 MBD330DWT1 MBD770DWT1 6 5 4 Surface Mount Comparisons: Area (mm 2 ) Max Package P D (mW) Device Count SOT–363 4.6 120 2 SOT–23 7.6 225 1 1 2 3 SOT–363 CASE 419B–01, STYLE 6 Space Savings: Package SOT–363 1 × SOT–23 40% 2 × SOT–23 70% The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage Cathode 6 N/C 5 Anode 4 1 Anode 2 N/C 3 Cathode MAXIMUM RATINGS Rating Symbol Reverse Voltage MBD110DWT1 Value Unit Vdc PF 7.0 30 70 120 mW TJ T stg –55 to +125 –55 to +150 °C °C VR MBD330DWT1 MBD770DWT1 Forward Power Dissipation T A = 25°C Junction Temperature Storage Temperature Range DEVICE MARKING MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5 Thermal Clad is a trademark of the Bergquist Company. MBD110–1/5 MBD110DWT1 MBD330DWT1 MBD770DWT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 0, f = 1.0 MHz, Note 1) Total Capacitance (V R = 15 Volts, f = 1.0 MHz) (V R = 20 Volts, f = 1.0 MHz) Reverse Leakage (V R = 3.0 V) (V R = 25 V) (V R = 35 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (I F = 10 mA) (I F = 1.0 mAdc) (I F = 10 mA) (I F = 1.0 mAdc) (I F = 10 mA) Symbol V (BR)R MBD110DWT1 MBD330DWT1 MBD770DWT1 Min Typ Max 7.0 30 70 10 — — — — — — 0.88 1.0 — — 0.9 0.5 1.5 1.0 — — — 0.02 13 9.0 0.25 200 200 — 6.0 — — — — — — 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 CT MBD110DWT1 pF CT MBD330DWT1 MBD770DWT1 Unit Volts pF IR MBD110DWT1 MBD330DWT1 MBD770DWT1 NF MBD110DWT1 VF MBD110DWT1 MBD330DWT1 MBD770DWT1 µA nAdc nAdc dB Vdc MBD110–2/5 MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS — MBD110DWT1 100 I F, FORWARD CURRENT (mA) I R, REVERSE LEAKAGE (µ A) 1.0 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 30 10 1.0 0.1 40 50 60 70 80 90 100 110 120 130 0.3 0.4 0.5 0.6 0.7 T A , AMBIENT TEMPERATURE (°C) V F , FORWARD VOLTAGE (VOLTS) Figure 1. Reverse Leakage Figure 2. Forward Voltage 0.8 11 1.0 10 NF, NOISE FIGURE (dB) C, CAPACITANCE (pF) 9 0.9 0.8 0.7 0.6 0 8 7 6 5 4 3 2 1 1.0 2.0 3.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 V R , REVERSE VOLTAGE (VOLTS) P LO , LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure 10 NOTES ON TESTING AND SPECIFICATIONS Note 1 – C C and C T are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 – Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. I F amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 – L S is measured on a package having a Figure 5. Noise Figure Test Circuit short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). MBD110–3/5 MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS MBD330DWT1 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 24 27 300 200 100 0 0 10 20 30 40 50 60 70 80 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 6. Total Capacitance Figure 7. Minority Carrier Lifetime 90 100 100 I F , FORWARD CURRENT (mA) I R , REVERSE LEAKAGE (µA) 400 30 10 1.0 0.1 0.01 0.001 0 500 τ , MINORITY CARRIER LIFETIME (ps) C T , TOTAL CAPACITANCE (pF) 2.8 10 1.0 0.1 6.0 12 18 24 30 0.2 0.4 0.6 0.8 1.0 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 8. Reverse Leakage Figure 9. Forward Voltage 1.2 MBD110–4/5 MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS MBD770DWT1 1.6 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 40 45 300 200 100 0 0 10 20 30 40 50 60 70 80 90 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 10 . Total Capacitance Figure 11. Minority Carrier Lifetime 100 100 I F , FORWARD CURRENT (mA) I R , REVERSE LEAKAGE (µA) 400 50 10 1.0 0.1 0.01 0.001 0 500 τ , MINORITY CARRIER LIFETIME (ps) C T , TOTAL CAPACITANCE (pF) 2.0 10 1.0 0.1 10 20 30 40 50 0.2 0.4 0.8 1.2 1.6 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 12. Reverse Leakage Figure 13. Forward Voltage 2.0 MBD110–5/5