ONSEMI MBD770DWT1G

MBD110DWT1,
MBD330DWT1,
MBD770DWT1
Preferred Device
Dual Schottky Barrier
Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT−363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small
six−leaded package. The SOT−363 is ideal for low−power surface
mount applications where board space is at a premium, such as
portable products.
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Anode 1
6 Cathode
N/C 2
5 N/C
Cathode 3
4 Anode
Surface Mount Comparisons:
SOT−363
SOT−23
4.6
120
2
7.6
225
1
(mm2)
Area
Max Package PD (mW)
Device Count
1
Space Savings:
Package
1 SOT−23
2 SOT−23
40%
70%
SOT−363
SC−88 / SOT−363
CASE 419B
STYLE 6
The MBD110DW, MBD330DW, and MBD770DW devices are
spin−offs of our popular MMBD101LT1, MMBD301LT1, and
MMBD701LT1 SOT−23 devices. They are designed for
high−efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
MARKING DIAGRAM
Features
•
•
•
•
6
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Pb−Free Packages are Available
xx M G
G
1
MAXIMUM RATINGS
xx
Rating
Symbol
Value
Unit
VR
7.0
30
70
V
Forward Power Dissipation TA = 25°C
PF
120
mW
Junction Temperature
TJ
−55 to +125
°C
Tstg
−55 to +150
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
Storage Temperature Range
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
1
= Device Code
Refer to Ordering Table,
page 2
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBD110DWT1/D
MBD110DWT1, MBD330DWT1, MBD770DWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mA)
Min
Typ
Max
7.0
30
70
10
−
−
−
−
−
−
0.88
1.0
−
−
0.9
0.5
1.5
1.0
−
−
−
0.02
13
9.0
0.25
200
200
−
6.0
−
−
−
−
−
−
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
V(BR)R
MBD110DWT1
MBD330DWT1
MBD770DWT1
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
MBD110DWT1
Total Capacitance
(VR = 15 Volts, f = 1.0 MHz)
(VR = 20 Volts, f = 1.0 MHz)
MBD330DWT1
MBD770DWT1
Reverse Leakage
(VR = 3.0 V)
(VR = 25 V)
(VR = 35 V)
MBD110DWT1
MBD330DWT1
MBD770DWT1
Noise Figure
(f = 1.0 GHz, Note 2)
MBD110DWT1
V
CD
pF
CT
pF
IR
NF
Forward Voltage
(IF = 10 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 1.0 mA)
(IF = 10 mA)
MBD770DWT1
mA
nA
nA
dB
VF
MBD110DWT1
MBD330DWT1
Unit
V
ORDERING INFORMATION
Device
Marking
Package
MBD110DWT1
MBD110DWT1G
SC−88 / SOT−363
M4
SC−88 / SOT−363
(Pb−Free)
MBD330DWT1
MBD330DWT1G
SC−88 / SOT−363
T4
SC−88 / SOT−363
(Pb−Free)
MBD770DWT1
MBD770DWT1G
Shipping †
3000 Units / Tape & Reel
SC−88 / SOT−363
H5
SC−88 / SOT−363
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MBD110DWT1, MBD330DWT1, MBD770DWT1
TYPICAL CHARACTERISTICS
MBD110DWT1
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (m A)
1.0
0.7
0.5
VR = 3.0 V
0.2
0.1
0.07
0.05
10
TA = 85°C
TA = −40°C
1.0
0.02
TA = 25°C
MBD110DWT1
0.01
30
40
50
60
70
80
90 100 110
TA, AMBIENT TEMPERATURE (°C)
120
MBD110DWT1
0.1
0.3
130
0.4
Figure 1. Reverse Leakage
0.8
11
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
10
9
0.9
NF, NOISE FIGURE (dB)
C , CAPACITANCE (pF)
D
0.7
Figure 2. Forward Voltage
1.0
0.8
0.7
8
7
6
5
4
3
2
MBD110DWT1
0.6
0.5
0.6
VF, FORWARD VOLTAGE (VOLTS)
0
1.0
2.0
3.0
VR, REVERSE VOLTAGE (VOLTS)
1
0.1
4.0
Figure 3. Capacitance
MBD110DWT1
0.2
0.5
1.0
2.0
5.0
PLO, LOCAL OSCILLATOR POWER (mW)
10
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOTES ON TESTING AND SPECIFICATIONS
Note 1 − CD and CT are measured using a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
Note 2 − Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 − LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Figure 5. Noise Figure Test Circuit
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3
MBD110DWT1, MBD330DWT1, MBD770DWT1
TYPICAL CHARACTERISTICS
MBD330DWT1
2.8
500
t , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
MBD330DWT1
f = 1.0 MHz
2.4
2.0
1.6
1.2
0.8
0.4
0
MBD330DWT1
400
KRAKAUER METHOD
300
200
100
0
0
3.0
6.0
9.0
12
15
18
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
30
0
Figure 6. Total Capacitance
20
30
40
50
60
70
IF, FORWARD CURRENT (mA)
80
90
100
Figure 7. Minority Carrier Lifetime
10
100
MBD330DWT1
IF, FORWARD CURRENT (mA)
MBD330DWT1
IR, REVERSE LEAKAGE (m A)
10
TA = 100°C
1.0
TA = 75°C
0.1
TA = 85°C
1.0
TA = 25°C
0.01
TA = −40°C
10
0.001
TA = 25°C
0.1
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
24
30
0.2
Figure 8. Reverse Leakage
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 9. Forward Voltage
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4
1.0
1.2
MBD110DWT1, MBD330DWT1, MBD770DWT1
TYPICAL CHARACTERISTICS
MBD770DWT1
2.0
500
t , MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
MBD770DWT1
f = 1.0 MHz
1.6
1.2
0.8
0.4
0
MBD770DWT1
400
KRAKAUER METHOD
300
200
100
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
0
50
10
Figure 10. Total Capacitance
40
60
30
50
70
IF, FORWARD CURRENT (mA)
80
90
100
Figure 11. Minority Carrier Lifetime
10
100
MBD770DWT1
IF, FORWARD CURRENT (mA)
MBD770DWT1
IR, REVERSE LEAKAGE (m A)
20
TA = 100°C
1.0
TA = 75°C
0.1
10
TA = 85°C
TA = −40°C
1.0
0.01
TA = 25°C
0.001
TA = 25°C
0.1
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
0.2
50
Figure 12. Reverse Leakage
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 13. Forward Voltage
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5
1.6
2.0
MBD110DWT1, MBD330DWT1, MBD770DWT1
PACKAGE DIMENSIONS
SC−88 / SC−70 / SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
6
5
4
1
2
3
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
b 6 PL
0.2 (0.008)
M
E
M
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
A3
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
ANODE 2
N/C
CATHODE 1
ANODE 1
N/C
CATHODE 2
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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PUBLICATION ORDERING INFORMATION
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6
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For additional information, please contact your local
Sales Representative
MBD110DWT1/D