ONSEMI MBD330DWT1

ON Semiconductor
MBD110DWT1
MBD330DWT1
MBD770DWT1
Dual Schottky Barrier Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT–363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small
six–leaded package. The SOT–363 is ideal for low–power surface
mount applications where board space is at a premium, such as
portable products.
ON Semiconductor Preferred Devices
6
Surface Mount Comparisons:
1
Area (mm2)
Max Package PD (mW)
Device Count
SOT–363
SOT–23
4.6
120
2
7.6
225
1
1 SOT–23
2 SOT–23
SOT–363
40%
70%
4
3
CASE 419B–01, STYLE 6
SOT–363
Space Savings:
Package
2
5
Anode 1
N/C 2
Cathode 3
The MBD110DW, MBD330DW, and MBD770DW devices are
spin–offs of our popular MMBD101LT1, MMBD301LT1, and
MMBD701LT1 SOT–23 devices. They are designed for
high–efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
6 Cathode
5 N/C
4 Anode
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VR
7.0
30
70
Vdc
Forward Power Dissipation
TA = 25°C
PF
120
mW
Junction Temperature
TJ
–55 to +125
°C
Tstg
–55 to +150
°C
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
Storage Temperature Range
DEVICE MARKING
MBD110DWT1 = M4
MBD330DWT1 = T4
MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
 Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev.3
1
Publication Order Number:
MBD110DWT1/D
MBD110DWT1 MBD330DWT1 MBD770DWT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 µA)
Symbol
Typ
Max
7.0
30
70
10
—
—
—
—
—
—
0.88
1.0
—
—
0.9
0.5
1.5
1.0
—
—
—
0.02
13
9.0
0.25
200
200
—
6.0
—
—
—
—
—
—
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
V(BR)R
MBD110DWT1
MBD330DWT1
MBD770DWT1
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
MBD110DWT1
Total Capacitance
(VR = 15 Volts, f = 1.0 MHz)
(VR = 20 Volts, f = 1.0 MHz)
MBD330DWT1
MBD770DWT1
Reverse Leakage
(VR = 3.0 V)
(VR = 25 V)
(VR = 35 V)
MBD110DWT1
MBD330DWT1
MBD770DWT1
Noise Figure
(f = 1.0 GHz, Note 2)
MBD110DWT1
Forward Voltage
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
Min
Volts
CT
pF
CT
pF
IR
NF
MBD770DWT1
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2
µA
nAdc
nAdc
dB
VF
MBD110DWT1
MBD330DWT1
Unit
Vdc
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS
MBD110DWT1
100
VR = 3.0 Vdc
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE ( A)
1.0
0.7
0.5
0.2
0.1
0.07
0.05
TA = 85°C
MBD110DWT1
30
40
50
60
70
80
90 100 110
TA, AMBIENT TEMPERATURE (°C)
120
TA = 25°C
MBD110DWT1
0.1
0.3
130
0.4
Figure 1. Reverse Leakage
0.7
0.8
11
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
10
NF, NOISE FIGURE (dB)
0.9
0.8
0.7
9
8
7
6
5
4
3
2
MBD110DWT1
0.6
0.5
0.6
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
C, CAPACITANCE (pF)
TA = -40°C
1.0
0.02
0.01
10
0
1.0
2.0
3.0
VR, REVERSE VOLTAGE (VOLTS)
1
0.1
4.0
Figure 3. Capacitance
MBD110DWT1
0.2
0.5
1.0
2.0
5.0
PLO, LOCAL OSCILLATOR POWER (mW)
10
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
NOTES ON TESTING AND SPECIFICATIONS
Note 1 – CC and CT are measured using a capacitance
bridge (Boonton Electronics Model 75A or equivalent).
Note 2 – Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 – LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Figure 5. Noise Figure Test Circuit
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MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS
MBD330DWT1
MBD330DWT1
2.4
500
, MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
2.8
f = 1.0 MHz
2.0
1.6
1.2
0.8
0.4
0
0
3.0
6.0
9.0
12
15
18
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
MBD330DWT1
400
KRAKAUER METHOD
300
200
100
0
30
0
Figure 6. Total Capacitance
100
TA = 100°C
TA = 75°C
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
40
60
30
50
70
IF, FORWARD CURRENT (mA)
80
90
100
MBD330DWT1
TA = -40°C
10
TA = 85°C
1.0
TA = 25°C
0.01
0.001
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE ( A)
MBD330DWT1
0.1
20
Figure 7. Minority Carrier Lifetime
10
1.0
10
24
0.1
30
TA = 25°C
0.2
Figure 8. Reverse Leakage
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 9. Forward Voltage
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4
1.0
1.2
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS
MBD770DWT1
MBD770DWT1
1.6
500
, MINORITY CARRIER LIFETIME (ps)
CT, TOTAL CAPACITANCE (pF)
2.0
f = 1.0 MHz
1.2
0.8
0.4
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
MBD770DWT1
400
KRAKAUER METHOD
300
200
100
0
50
0
10
Figure 10. Total Capacitance
100
MBD770DWT1
TA = 100°C
1.0
TA = 75°C
0.1
30
50
70
40
60
IF, FORWARD CURRENT (mA)
80
90
100
Figure 11. Minority Carrier Lifetime
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE ( A)
10
20
MBD770DWT1
10
TA = 85°C
TA = -40°C
1.0
0.01
0.001
TA = 25°C
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
0.1
50
Figure 12. Reverse Leakage
TA = 25°C
0.2
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
Figure 13. Forward Voltage
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5
1.6
2.0
MBD110DWT1 MBD330DWT1 MBD770DWT1
INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.65 mm 0.65 mm
0.4 mm (min)
0.5 mm (min)
1.9 mm
SOT–363
SOT–363 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–363 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature
of the die, RθJA, the thermal resistance from the device
junction to ambient, and the operating temperature, TA.
Using the values provided on the data sheet for the
SOT–363 package, PD can be calculated as follows:
PD =
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. Therefore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage
to the device.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
PD =
150°C – 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–363 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
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MBD110DWT1 MBD330DWT1 MBD770DWT1
PACKAGE DIMENSIONS
SC–88 (SOT–363)
CASE 419B–01
ISSUE G
A
G
V
6
5
4
1
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
S
D 6 PL
0.2 (0.008)
M
B
DIM
A
B
C
D
G
H
J
K
N
S
V
M
N
J
C
H
K
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
ANODE 2
N/C
CATHODE 1
ANODE 1
N/C
CATHODE 2
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7
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
0.30
0.40
MBD110DWT1 MBD330DWT1 MBD770DWT1
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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MBD110DWT1/D