MBR1045MFS D

MBR1045MFS,
NRVB1045MFS
Switch Mode
Power Rectifiers
These state−of−the−art devices have the following features:
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Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
•
•
•
•
•
•
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
150°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
45 VOLTS
5,6
1,2,3
MARKING
DIAGRAM
A
1
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B1045
A
Y
W
ZZ
A
A
C
B1045
AYWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Applications
• Excellent Alternative to DPAK in Space−Constrained Automotive
•
•
Applications
Output Rectification in Compact Portable Consumer Applications
Freewheeling Diode used with Inductive Loads
ORDERING INFORMATION
Device
Package
Shipping†
MBR1045MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
MBR1045MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB1045MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB1045MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 1
1
Publication Order Number:
MBR1045MFS/D
MBR1045MFS, NRVB1045MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
Average Rectified Forward Current
(Rated VR, TC = 142°C)
IF(AV)
10
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 140°C)
IFRM
20
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +150
°C
EAS
150
mJ
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
V
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
−
1.7
°C/W
0.430
0.504
0.550
0.595
0.52
0.62
0.65
0.75
47
0.076
170
0.500
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 10 A, TJ = 125°C)
(iF = 10 A, TJ = 25°C)
(iF = 20 A, TJ = 125°C)
(iF = 20 A, TJ = 25°C)
vF
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
Diode Capacitance
CD
V
mA
300
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR1045MFS, NRVB1045MFS
IF, INSTANTANEOUS FORWARD CURRENT (A)
100
TA = 125°C
10
TA = 150°C
TA = 25°C
1
TA = −40°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
100
10
TA = 125°C
TA = 150°C
TA = 25°C
1
TA = −40°C
0.1
0
0.3
0.4
0.5
0.6
0.7
0.8
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
0.9
1.E+00
TA = 150°C
TA = 150°C
1.E−01
1.E−02
TA = 125°C
1.E−03
1.E−02
TA = 125°C
1.E−03
1.E−04
TA = 25°C
1.E−05
1.E−06
1.E−04
TA = −40°C
TA = 25°C
1.E−05
1.E−07
TA = −40°C
1.E−06
1.E−08
1.E−07
1.E−09
1.E−10
0
10
20
30
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
1.E−08
0
10000
TJ = 25°C
1000
100
0
10
20
30
VR, REVERSE VOLTAGE (V)
5
10
15 20
25
30
35
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
45
Figure 4. Maximum Reverse Characteristics
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 3. Typical Reverse Characteristics
C, JUNCTION CAPACITANCE (pF)
0.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E+00
10
0.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
40
20
RqJC = 1.7°C/W
dc
15
SQUARE WAVE
10
5
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140 160
Figure 6. Current Derating TO−220AB
Figure 5. Typical Junction Characteristics
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3
MBR1045MFS, NRVB1045MFS
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
8
TJ = 150°C
IPK/IAV = 20
7
IPK/IAV = 10
6
IPK/IAV = 5
5
4
3
2
Square Wave
1
dc
0
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
R(t), (°C/W)
10
50% Duty Cycle
20%
10%
5%
2%
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
1
1%
0.1
0.01
0.001
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (S)
Figure 8. R(t) vs. Duty
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4
1
10
100
1000
MBR1045MFS, NRVB1045MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE K
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
0.10 C
SOLDERING FOOTPRINT*
SIDE VIEW
8X
DETAIL A
3X
4X
1.270
0.750
4X
b
0.10
C A B
0.05
c
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15
5.00
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.15
6.00
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
1.000
e/2
L
1
0.965
4
1.330
K
2X
0.905
2X
0.495
E2
PIN 5
(EXPOSED PAD)
G
L1
M
4.530
3.200
0.475
2X
D2
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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MBR1045MFS/D