MBR2045EMFS D

MBR2045EMFS,
NRVB2045EMFS
Switch-mode
Power Rectifiers
These state−of−the−art devices have the following features:
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Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
•
•
•
•
•
•
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
150°C Operating Junction Temperature
Wettable Flacks Option Available
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
45 VOLTS
5,6
1,2,3
MARKING
DIAGRAM
A
1
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B2045E
A
Y
W
ZZ
A
A
C
B2045E
AYWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Applications
• Excellent Alternative to DPAK in Space−Constrained Automotive
•
•
Applications
Output Rectification in Compact Portable Consumer Applications
Freewheeling Diode used with Inductive Loads
ORDERING INFORMATION
Device
Package
Shipping†
MBR2045EMFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
MBR2045EMFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB2045EMFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB2045EMFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 1
1
Publication Order Number:
MBR2045EMFS/D
MBR2045EMFS, NRVB2045EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
Average Rectified Forward Current
(Rated VR, TC = 130°C)
IF(AV)
20
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 120°C)
IFRM
40
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
400
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +150
°C
EAS
150
mJ
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
V
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
−
1.6
°C/W
0.35
0.45
0.43
0.51
0.47
0.56
0.58
0.64
48
0.09
100
0.40
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 10 A, TJ = 125°C)
(iF = 10 A, TJ = 25°C)
(iF = 20 A, TJ = 125°C)
(iF = 20 A, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR2045EMFS, NRVB2045EMFS
100.00
100.00
10.00
TA = 150°C
125°C
1.00
25°C
−40°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10.00
1.00
125°C
25°C
−40°C
0.10
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.800.90
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Voltage
Figure 2. Maximum Instantaneous Forward
Voltage
1.E+00
1.E+00
TA = 150°C
1.E−01
1.E−02
TA = 125°C
1.E−03
1.E−04
1.E−01
TA = 150°C
1.E−02
TA = 125°C
1.E−03
1.E−04
TA = 25°C
1.E−05
TA = 25°C
1.E−05
1.E−06
1.E−06
1.E−07
1.E−07
TA = −40°C
TA = −40°C
1.E−08
1.E−08
1.E−09
1.E−09
0
10
20
30
40
1.E−10
0
10
5
20
15
25
30
35
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
45
60
TJ = 25°C
1,000
100
RqJC = 1.6°C/W
55
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
TA = 150°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.10
0.0
1.E−10
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
50
dc
45
40
SQUARE WAVE
35
30
25
20
15
10
5
10
0
0
10
20
30
0
40
20
40
60
80
100
120
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
140 160
MBR2045EMFS, NRVB2045EMFS
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
8
IAPK/IAV = 20
7
IAPK/IAV = 10
6
5
IAPK/IAV = 5
4
3
2
SQUARE WAVE
1
DC
0
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
Duty Cycle = 50%
R(t) (°C/W)
10
20%
10%
5%
2%
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
1
1%
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 8. Thermal Response
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4
1
10
100
1000
MBR2045EMFS, NRVB2045EMFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10 C
SOLDERING FOOTPRINT*
SIDE VIEW
8X
DETAIL A
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
4X
1.000
e/2
L
1
0.965
4
K
1.330
2X
0.905
2X
0.495
E2
PIN 5
(EXPOSED PAD)
G
L1
M
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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MBR2045EMFS/D