MBR30H100MFS D

MBR30H100MFS,
NRVB30H100MFS
Switch-mode
Power Rectifiers
These state−of−the−art devices have the following features:
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Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
•
•
•
•
•
•
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
175°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
100 VOLTS
5,6
1,2,3
MARKING
DIAGRAM
A
1
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B30H10
A
Y
W
ZZ
A
A
C
B30H10
AYWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
Applications
•
•
•
•
Output Rectification in Compact Portable Consumer Applications
Freewheeling Diode used with Inductive Loads
Telecom Power Conversion
Automotive Freewheeling Diode
ORDERING INFORMATION
Device
Package
Shipping†
MBR30H100MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
MBR30H100MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB30H100MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB30H100MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 2
1
Publication Order Number:
MBR30H100MFS/D
MBR30H100MFS, NRVB30H100MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
Average Rectified Forward Current
(Rated VR, TC = 140°C)
IF(AV)
30
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 135°C)
IFRM
60
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
300
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +175
°C
EAS
100
mJ
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
V
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
−
1.6
°C/W
0.58
0.71
0.66
0.81
0.72
0.76
0.86
0.90
5
0.005
15
0.1
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 15 A, TJ = 125°C)
(iF = 15 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 30 A, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR30H100MFS, NRVB30H100MFS
TYPICAL CHARACTERISTICS
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 175°C
10
TA = 150°C
TA = 125°C
1
TA = 25°C
TA = −40°C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
TA = 25°C
TA = −40°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
TA = 175°C
1.E−01
1.E−02
1.E−03
1.E−03
TA = 150°C
TA = 125°C
1.E−04
1.E−05
TA = 25°C
1.E−06
TA = 175°C
1.E−01
1.E−02
TA = 125°C
1.E−04
1.E−05
TA = 150°C
TA = 25°C
1.E−06
1.E−07
1.E−07
1.E−08
1.E−09
1.E−08
1.E−09
1.E−10
1.E−10
TA = −40°C
1.E−11
1.E−12
0
10
20
TA = −40°C
1.E−11
1.E−12
30
40
50
60
70
80
90 100
0
10
30
20
40
50
60
70
80
90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10000
C, JUNCTION CAPACITANCE (pF)
1
1.0
1.E+00
TJ = 25°C
1000
100
10
0
TA = 150°C
TA = 125°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0
TA = 175°C
10
0.1
10
20
30
40
50
60
70
80
90
100
IF(AV), AVERAGE FORWARD CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
60
55
50
RqJC = 1.6°C/W
dc
45
40
35
30
Square Wave
25
20
15
10
5
0
60
80
100
120
140
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
160
MBR30H100MFS, NRVB30H100MFS
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
8
IPK/IAV = 20
TJ = 175°C
IPK/IAV = 10
7
6
5
IPK/IAV = 5
4
3
Square Wave
2
1
dc
0
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
R(t) (°C/W)
100
50% Duty Cycle
20%
10 10%
5%
2%
1
1%
0.1
0.01
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 8. Thermal Characteristics
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4
1
10
100
1000
MBR30H100MFS, NRVB30H100MFS
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P
(SO8 FL)
CASE 488AA
ISSUE H
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10 C
SIDE VIEW
8X
DETAIL A
SOLDERING FOOTPRINT*
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
1.000
e/2
L
1
4
0.965
K
1.330
E2
PIN 5
(EXPOSED PAD)
L1
2X
0.905
2X
M
0.495
4.530
3.200
G
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBR30H100MFS/D