MBR2045MFS D

MBR2045MFS,
NRVB2045MFS
Switch Mode
Power Rectifiers
These state−of−the−art devices have the following features:
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Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
•
•
•
•
•
•
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
150°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Applications
• Output Rectification in Compact Portable Consumer Applications
• Freewheeling Diode used with Inductive Loads
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
45 VOLTS
5,6
1,2,3
MARKING
DIAGRAM
A
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B2045
A
Y
W
ZZ
A
A
C
B2045
AYWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
MBR2045MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB2045MFST1G*
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
MBR2045MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB2045MFST3G*
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
1
Publication Order Number:
MBR2045MFS/D
MBR2045MFS, NRVB2045MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
Average Rectified Forward Current
(Rated VR, TC = 130°C)
IF(AV)
20
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 135°C)
IFRM
40
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
400
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +150
°C
EAS
150
mJ
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
V
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
−
1.6
°C/W
0.35
0.44
0.46
0.51
0.41
0.49
0.58
0.61
200
0.3
300
0.6
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 15 A, TJ = 125°C)
(iF = 15 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 30 A, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
V
mA
MBR2045MFS, NRVB2045MFS
100.00
100.00
10.00
TA = 150°C
125°C
1.00
25°C
−40°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
10.00
125°C
−40°C
25°C
0.10
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.800.90
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Voltage
Figure 2. Maximum Instantaneous Forward
Voltage
1.E+00
1.E+00
TA = 150°C
1.E−01
TA = 150°C
1.E−01
TA = 125°C
1.E−02
TA = 125°C
1.E−02
1.E−03
1.E−03
TA = 25°C
1.E−04
TA = 25°C
1.E−04
1.E−05
1.E−05
1.E−06
1.E−06
1.E−07
1.E−07
TA = −40°C
1.E−08
TA = −40°C
1.E−08
1.E−09
1.E−09
0
10
20
30
40
1.E−10
0
10
5
20
15
25
30
35
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
45
60
TJ = 25°C
55
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
TA = 150°C
1.00
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.10
0.0
1.E−10
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
1,000
100
RqJC = 1.6°C/W
50
dc
45
40
SQUARE WAVE
35
30
25
20
15
10
5
10
0
0
10
20
30
0
40
20
40
60
80
100
120
140 160
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating TO−220AB
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3
MBR2045MFS, NRVB2045MFS
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
8
IAPK/IAV = 20
7
IAPK/IAV = 10
6
5
IAPK/IAV = 5
4
3
2
SQUARE WAVE
1
DC
0
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
R(t) (°C/W)
10
Duty Cycle = 50%
20%
10%
5%
2%
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
1
1%
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 8. Thermal Response
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4
1
10
100
1000
MBR2045MFS, NRVB2045MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
0.10 C
SIDE VIEW
8X
DETAIL A
SOLDERING FOOTPRINT*
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
1.000
e/2
L
1
4
0.965
K
1.330
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.905
2X
0.495
4.530
3.200
G
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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5
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MBR2045MFS/D