MBR1635 D

MBR1635, MBR1645,
MBRB1645, NRVBB1645
Switch Mode
Power Rectifiers
16 A, 35 and 45 V
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
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Features
•
•
•
•
•
Guard−ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
TO−220AC
CASE 221B
PLASTIC
1
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams for TO−220
•
•
MARKING
DIAGRAMS
4
3
AYWWG
B16x5
KA
1, 4
3
A
Y
WW
B16x5
x
KA
G
1.7 Grams for D2PAK
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
= Assembly Location
= Year
= Work Week
= Device Code
= 3 or 4
= Diode Polarity
= Pb−Free Package
MAXIMUM RATINGS
Rating
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR1635
MBR1645
MBRB1645
VRRM
VRWM
VR
Average Rectified Forward Current Delay
(Rated VR, TC = 163°C) Total Device
IF(AV)
Peak Repetitive Forward Current, Per
Leg
(Rated VR, Square Wave,
20 kHz, TC = 157°C) Total Device
IFRM
32
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current
(2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
TJ
−65 to +175
°C
dv/dt
10,000
V/ms
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated VR)
Value
Unit
V
April, 2014 − Rev. 12
D2PAK
CASE 418B
STYLE 3
B1645G
AYWW
1
35
45
45
1
3
4
3
A
16
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
© Semiconductor Components Industries, LLC, 2014
4
1
B1645
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MBR1635G
TO−220
(Pb−Free)
50 Units / Rail
MBR1645G
TO−220
(Pb−Free)
50 Units / Rail
MBRB1645T4G
D2PAK
(Pb−Free)
800 Units / Rail
NRVBB1645T4G
D2PAK
(Pb−Free)
800 Units / Rail
Publication Order Number:
MBR1635/D
MBR1635, MBR1645, MBRB1645, NRVBB1645
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance,
Junction−to−Case
Symbol
Value
Unit
RqJC
1.5
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 16 Amps, TC = 125°C)
(iF = 16 Amps, TC = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR
V
0.57
0.63
mA
40
0.2
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
100
70
1.0E−01
50
1.0E−02
IR, REVERSE CURRENT (A)
TJ = 150°C
TJ = 125°C
30
20
125°C
1.0E−03
100°C
25°C
10
7.0
5.0
1.0E−04
1.0E−05
3.0
2.0
25°C
1.0E−06
1.0E−07
1.0
0.2
0.6
0.4
0.8
0
1.0
10
20
30
40
vF, INSTANTANEOUS FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
28
dc
26
24
22
20 SQUARE
18
16
14
12
10
8
6
4
2
0
145
150
50
20
18
IF(AV), AVERAGE FORWARD
CURRENT (A)
0
RqJA = 16°C/W
RqJA = 60°C/W
(No Heat Sink)
dc
16
14
12
10
8
dc
6
4
SQUARE
WAVE
2
0
155
160
165
170
0
175
25
TC, CASE TEMPERATURE (°C)
50
75
SQUARE WAVE
I
(RESISTIVE LOAD) PK + p
I
AV
12
I
PK + 5.0
10 (CAPACITATIVELOAD) I
dc
AV
8.0
10
6.0
20
4.0
TJ = 125°C
2.0
0
0
2.0
4.0
125
150
Figure 4. Current Derating, Ambient
16
14
100
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating, Case, Per Leg
PF(AVE)
, AVERAGE POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD
CURRENT (A)
iF, INSTANTANEOUS FORWARD CURRENT (A)
MBR1635, MBR1645, MBRB1645, NRVBB1645
6.0
8.0
10
12
14
16
18
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Forward Power Dissipation
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3
20
175
MBR1635, MBR1645, MBRB1645, NRVBB1645
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
C
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
4
V
W
1
2
S
3
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
−T−
SEATING
PLANE
G
K
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
W
J
M
T B
M
H
N
R
L
M
P
U
L
M
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBR1635, MBR1645, MBRB1645, NRVBB1645
PACKAGE DIMENSIONS
TO−220
CASE 221B−04
ISSUE E
C
B
Q
F
T
S
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
4
A
1
U
3
H
K
L
R
D
G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
J
INCHES
MIN
MAX
0.595
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.190
0.210
0.110
0.130
0.014
0.025
0.500
0.562
0.045
0.060
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
MILLIMETERS
MIN
MAX
15.11
15.75
9.65
10.29
4.06
4.82
0.64
0.89
3.61
4.09
4.83
5.33
2.79
3.30
0.36
0.64
12.70
14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.000
1.27
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MBR1635/D