MBRS3100T3 D

MBRS3100T3G,
NRVBS3100T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 100 VOLTS
Features








Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
SMC
CASE 403
MARKING DIAGRAM
AYWW
B310G
G
Mechanical Characteristics
 Case: Epoxy, Molded
 Weight: 217 mg (Approximately)
 Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
 Lead and Mounting Surface Temperature for Soldering Purposes:


260C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Ratings:
 Machine Model = C
 Human Body Model = 3B
B310
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
MBRS3100T3G
SMC
(Pb−Free)
2,500 /
Tape & Reel
NRVBS3100T3G
SMC
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 4
1
Publication Order Number:
MBRS3100T3/D
MBRS3100T3G, NRVBS3100T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(At Rated VR, TL = 100C)
IF(AV)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
Operating Junction Temperature Range (Note 1)
TJ
3.0
130
− 65 to +175
A
A
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead
Symbol
Value
Unit
RqJL
11
C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 3.0 A, TJ = 25C)
(iF = 6.0 A, TJ = 25C)
(iF = 3.0 A, TJ = 125C)
(iF = 6.0 A, TJ = 125C)
VF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25C)
(Rated dc Voltage, TJ = 125C)
iR
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.
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2
0.79
0.90
0.62
0.70
0.05
5.0
V
mA
MBRS3100T3G, NRVBS3100T3G
10
75C
125C
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10
25C
1
0.1
0.2
0.3
0.4
0.6
0.5
0.7
0.8
75C
0.3
0.4
0.5
0.6
0.7
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
TJ = 25C
C, CAPACITANCE (pF)
1E−05
75C
1E−06
25C
1E−07
0
20
40
60
80
100
20
40
60
80
Figure 4. Typical Capacitance
6
5
dc
4
SQUARE WAVE
2
1
100
0
Figure 3. Typical Reverse Current
RATED VOLTAGE APPLIED
RqJL = 11 C/W
TJ = 150C
90
10
VR, REVERSE VOLTAGE (V)
7
3
100
VR, REVERSE VOLTAGE (V)
110
120
130
140
150
160
170
Pfo, AVERAGE POWER DISSIPATION
(W)
IR, REVERSE CURRENT (A)
1
1000
125C
IF, AVERAGE FORWARD
CURRENT (A)
0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1E−04
0
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1E−03
1E−08
25C
1
0.1
0.9
125C
180
100
4.5
dc
4
3.5
3
SQUARE WAVE
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
TL, LEAD TEMPERATURE (C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating − Lead
Figure 6. Forward Power Dissipation
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6
MBRS3100T3G, NRVBS3100T3G
PACKAGE DIMENSIONS
SMC
CASE 403−03
ISSUE E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03.
HE
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
MIN
1.90
0.05
2.92
0.15
5.59
6.60
7.75
0.76
MILLIMETERS
NOM
MAX
2.13
2.41
0.10
0.15
3.00
3.07
0.23
0.30
5.84
6.10
6.86
7.11
7.94
8.13
1.02
1.27
0.51 REF
MIN
0.075
0.002
0.115
0.006
0.220
0.260
0.305
0.030
INCHES
NOM
0.084
0.004
0.118
0.009
0.230
0.270
0.313
0.040
0.020 REF
MAX
0.095
0.006
0.121
0.012
0.240
0.280
0.320
0.050
A
L
L1
c
A1
SOLDERING FOOTPRINT*
4.343
0.171
3.810
0.150
2.794
0.110
SCALE 4:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MBRS3100T3/D