MBRS3100T3G, NRVBS3100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 100 VOLTS Features Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection AEC−Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* SMC CASE 403 MARKING DIAGRAM AYWW B310G G Mechanical Characteristics Case: Epoxy, Molded Weight: 217 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Ratings: Machine Model = C Human Body Model = 3B B310 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBRS3100T3G SMC (Pb−Free) 2,500 / Tape & Reel NRVBS3100T3G SMC (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 4 1 Publication Order Number: MBRS3100T3/D MBRS3100T3G, NRVBS3100T3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (At Rated VR, TL = 100C) IF(AV) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature Range (Note 1) TJ 3.0 130 − 65 to +175 A A C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead Symbol Value Unit RqJL 11 C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 3.0 A, TJ = 25C) (iF = 6.0 A, TJ = 25C) (iF = 3.0 A, TJ = 125C) (iF = 6.0 A, TJ = 125C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 125C) iR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 0.79 0.90 0.62 0.70 0.05 5.0 V mA MBRS3100T3G, NRVBS3100T3G 10 75C 125C IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 25C 1 0.1 0.2 0.3 0.4 0.6 0.5 0.7 0.8 75C 0.3 0.4 0.5 0.6 0.7 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage TJ = 25C C, CAPACITANCE (pF) 1E−05 75C 1E−06 25C 1E−07 0 20 40 60 80 100 20 40 60 80 Figure 4. Typical Capacitance 6 5 dc 4 SQUARE WAVE 2 1 100 0 Figure 3. Typical Reverse Current RATED VOLTAGE APPLIED RqJL = 11 C/W TJ = 150C 90 10 VR, REVERSE VOLTAGE (V) 7 3 100 VR, REVERSE VOLTAGE (V) 110 120 130 140 150 160 170 Pfo, AVERAGE POWER DISSIPATION (W) IR, REVERSE CURRENT (A) 1 1000 125C IF, AVERAGE FORWARD CURRENT (A) 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1E−04 0 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1E−03 1E−08 25C 1 0.1 0.9 125C 180 100 4.5 dc 4 3.5 3 SQUARE WAVE 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating − Lead Figure 6. Forward Power Dissipation http://onsemi.com 3 6 MBRS3100T3G, NRVBS3100T3G PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03. HE E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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