MBR1635, MBR1645, MBRB1645 MBR1645 is a Preferred Device SWITCHMODEE Power Rectifiers 16 A, 35 and 45 V These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • Guard−ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Pb−Free Packages are Available TO−220AC CASE 221B PLASTIC Mechanical Characteristics: 1 • Case: Epoxy, Molded • Weight: 1.9 Grams for TO−220 • • 3 3 1.7 Grams for D2PAK Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds A Y WW B16x5 x KA G MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1635 MBR1645 MBRB1645 VRRM VRWM VR Average Rectified Forward Current Delay (Rated VR, TC = 163°C) Total Device IF(AV) Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz, TC = 157°C) Total Device IFRM 32 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C dv/dt 10,000 V/ms Voltage Rate of Change (Rated VR) MARKING DIAGRAMS 4 Value 1, 4 = Assembly Location = Year = Work Week = Device Code = 3 or 4 = Diode Polarity = Pb−Free Package Unit V 35 45 45 4 1 3 AYWWG B16x5 KA D2PAK CASE 418B STYLE 3 B1645G AYWW 1 4 3 A 16 B1645 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. Device Package Shipping TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail MBR1645G TO−220 (Pb−Free) 50 Units / Rail MBRB1645T4G D2PAK (Pb−Free) 800 Units / Rail MBR1635 MBR1635G MBR1645 Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. 11 1 Publication Order Number: MBR1635/D MBR1635, MBR1645, MBRB1645 THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction−to−Case Symbol Value Unit RqJC 1.5 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 16 Amps, TC = 125°C) (iF = 16 Amps, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 V 0.57 0.63 mA 40 0.2 100 70 1.0E−01 50 1.0E−02 IR, REVERSE CURRENT (A) TJ = 150°C TJ = 125°C 30 20 25°C 1.0E−04 1.0E−05 3.0 2.0 25°C 1.0E−06 1.0E−07 0.2 0.4 0.8 0.6 1.0 10 0 20 30 40 vF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current 28 dc 26 24 22 20 SQUARE 18 16 14 12 10 8 6 4 2 0 145 150 20 18 IF(AV), AVERAGE FORWARD CURRENT (A) 0 160 165 170 14 12 10 8 175 dc 6 4 SQUARE WAVE 2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Derating, Case, Per Leg Figure 4. Current Derating, Ambient 16 SQUARE WAVE I (RESISTIVE LOAD) PK + p I 14 AV 12 I (CAPACITATIVELOAD) PK + 5.0 I 10 dc AV 8.0 10 6.0 20 4.0 TJ = 125°C 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Forward Power Dissipation http://onsemi.com 3 50 RqJA = 16°C/W RqJA = 60°C/W (No Heat Sink) dc 16 0 155 PF(AVE) , AVERAGE POWER DISSIPATION (W) 1.0 125°C 1.0E−03 100°C 10 7.0 5.0 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) MBR1635, MBR1645, MBRB1645 20 175 MBR1635, MBR1645, MBRB1645 PACKAGE DIMENSIONS D2PAK CASE 418B−04 ISSUE J C −B− E 4 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. V W S 3 DIM A B C D E F G H J K L M N P R S V A −T− SEATING PLANE G K D 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE J M T B M H N R P U L M W L M STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 1.016 0.04 10.66 0.42 17.02 0.67 5.08 0.20 3.05 0.12 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBR1635, MBR1645, MBRB1645 PACKAGE DIMENSIONS TO−220 PLASTIC CASE 221B−04 ISSUE E C B Q F T S DIM A B C D F G H J K L Q R S T U 4 A 1 3 U H K L D G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. R J INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 0.89 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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