MBR20100CT D

MBR2080CTG,
MBR2090CTG,
MBR20100CTG
Switch-mode
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These state−of−the−art devices have the following
features:
Features
•
•
•
•
•
•
•
•
•
•
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Shipped 50 units per plastic tube
These Devices are Pb−Free and are RoHS Compliant*
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SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
80−100 VOLTS
1
2, 4
3
4
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
1
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
2
3
TO−220
CASE 221A
STYLE 6
MARKING DIAGRAM
AY WW
B20x0G
AKA
A
Y
WW
B20x0
x
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= 8, 9 or 10
= Pb−Free Device
= Polarity Designator
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 1
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBR20100CT/D
MBR2080CTG, MBR2090CTG, MBR20100CTG
MAXIMUM RATINGS (Per Diode Leg)
MBR
Symbol
2080CT
2090CT
20100CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80
90
100
V
Average Rectified Forward Current
(Rated VR) TC = 133°C
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
IFRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
0.5
A
Operating Junction Temperature (Note 1)
TJ
*65 to +175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Rating
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance Junction−to−Case
Junction−to−Ambient
Symbol
Value
Unit
RqJC
RqJA
2.0
60
°C/W
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR
V
0.75
0.85
0.85
0.95
mA
6.0
0.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device
Package
Shipping
MBR2080CTG
TO−220
(Pb−Free)
50 Units / Rail
MBR2090CTG
TO−220
(Pb−Free)
50 Units / Rail
MBR20100CTG
TO−220
(Pb−Free)
50 Units / Rail
www.onsemi.com
2
10
50
TJ = 150°C
20
IR , REVERSE CURRENT (mA)
150°C
10
100°C
125°C
5.0
3.0
TJ = 25°C
1.0
1.0
125°C
0.1
100°C
0.01
0.001
25°C
0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.8
0.7
0.0001
1.0
0.9
40
60
100
80
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Diode
Figure 2. Typical Reverse Current Per Diode
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
20
RATED VOLTAGE APPLIED
RqJC = 2°C/W
dc
15
SQUARE WAVE
10
5.0
0
80
20
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
100
120
140
160
20
(HEATSINK)
RqJA = 16°C/W
(NO HEATSINK)
RqJA = 60°C/W
15
10
dc
5.0
SQUARE WAVE
0
180
0
20
60
40
IPK/IAV = 5.0
TA = 25°C
IPK/IAV = p
16
IPK/IAV = 10
14
12
dc
IPK/IAV = 20
8.0
SQUARE WAVE
6.0
4.0
2.0
0
0
2.0
100
120
140
160
180
Figure 4. Typical Current Derating, Ambient, Per Leg
20
10
80
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Typical Current Derating, Case, Per Leg
18
RATED VOLTAGE
APPLIED
dc
TC, CASE TEMPERATURE (°C)
AVERAGE POWER (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR2080CTG, MBR2090CTG, MBR20100CTG
4.0
6.0
8.0
10
12
14
16
18
AVERAGE CURRENT (AMPS)
Figure 5. Average Power Dissipation and
Average Current
www.onsemi.com
3
20
MBR2080CTG, MBR2090CTG, MBR20100CTG
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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PUBLICATION ORDERING INFORMATION
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBR20100CT/D