MBR20H100CT D

MBR20H100CTG,
MBRB20H100CTG,
MBRF20H100CTG,
NRVBB20H100CTT4G
Switch-mode
Power Rectifier
100 V, 20 A
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SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
Features and Benefits
•
•
•
•
•
•
•
•
Low Forward Voltage: 0.64 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
2, 4
3
4
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
1
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight (Approximately):
•
1
3
TO−220
CASE 221A
STYLE 6
Mechanical Characteristics:
•
2
2
3
TO−220 FULLPAKt
CASE 221D
STYLE 3
4
1.9 Grams (TO−220)
1.7 Grams (D2PAK)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
1
2
3
D2PAK 3
CASE 418B
STYLE 3
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 12
1
Publication Order Number:
MBR20H100CT/D
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
AYWW
B20H100G
AKA
TO−220
AYWW
B20H100G
AKA
AYWW
B20H100G
AKA
D2PAK 3
TO−220 FULLPAK
A
Y
WW
B20H100
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Device
= Polarity Designator
Figure 1. Marking Diagrams
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage‘
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC = 162°C
IF(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 160°C
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
A
10
A
20
Operating Junction Temperature (Note 1)
A
250
°C
TJ
+175
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
200
mJ
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
V
> 400
> 8000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Thermal Resistance
(MBR20H100CTG, MBRB20H100CTG and NRVBB20H100CTT4G)
Junction−to−Case
Junction−to−Ambient
(MBRF20H100CTG)
Junction−to−Case
Value
Unit
°C/W
RqJC
RqJA
2.0
60
RqJC
2.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 10 A, TC = 25°C)
(IF = 10 A, TC = 125°C)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 125°C)
(Rated DC Voltage, TC = 25°C)
iR
Value
Unit
V
0.77
0.64
0.88
0.73
mA
6.0
0.0045
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Package
Shipping†
MBR20H100CTG
TO−220
(Pb−Free)
50 Units / Rail
MBRF20H100CTG
TO−220FP
(Pb−Free)
50 Units / Rail
MBRB20H100CTT4G
D2PAK 3
(Pb−Free)
800 / Tape & Reel
NRVBB20H100CTT4G*
D2PAK 3
(Pb−Free)
800 / Tape & Reel
Device Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
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3
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
100
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.1
0
0.2
1.0
0.8
1.2
1.0E−01
IR, REVERSE CURRENT (AMPS)
1.0E−01
1.0E−02
TJ = 150°C
1.0E−02
TJ = 150°C
1.0E−03
1.0E−03
TJ = 125°C
1.0E−04
TJ = 125°C
1.0E−04
1.0E−05
1.0E−05
1.0E−06
TJ = 25°C
1.0E−06
TJ = 25°C
1.0E−07
1.0E−07
1.0E−08
0
40
20
60
80
100
20
40
60
80
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
20
dc
15
SQUARE WAVE
10
5
110
1.0E−08
0
PFO, AVERAGE POWER DISSIPATION
(WATTS)
IF, AVERAGE FORWARD CURRENT (AMPS)
0.6
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
0
100
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
120
130
140
150
160
170
180
16
14
12
SQUARE
DC
10
8
6
4
2
0
0
5
10
15
20
TC, CASE TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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4
100
25
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
10000
C, CAPACITANCE (pF)
TJ = 25°C
1000
100
10
0
20
40
80
60
100
VR, REVERSE VOLTAGE (VOLTS)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Capacitance
100
D = 0.5
10
0.2
0.1
1
0.05
P(pk)
0.01
t1
0.1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 8. Thermal Response Junction−to−Ambient for MBR20H100CT, MBRB20H100CT
and NRVBB20H100CTT4G
10
1
D = 0.5
0.2
0.1
0.05
P(pk)
0.1
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Case for MBR20H100CT, MBRB20H100CT
and NRVBB20H100CTT4G
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5
100
1000
R(t), TRANSIENT THERMAL RESISTANCE
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
10
D = 0.5
1
0.1
0.2
0.1
0.05
0.01
P(pk)
t1
0.01
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
1000
100
t1, TIME (sec)
Figure 10. Thermal Response Junction−to−Case for MBRF20H100CT
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
ID
ID
IL
DUT
S1
VDD
t0
Figure 11. Test Circuit
t1
t2
t
Figure 12. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The unclamped inductive switching circuit shown in
Figure 11 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
BV
°V
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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6
Ǔ
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
H
M
T B
M
N
R
M
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
P
U
L
L
M
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
N
STYLE 6:
PIN 1.
2.
3.
4.
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8
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
Y
FULLPAK is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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PUBLICATION ORDERING INFORMATION
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9
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For additional information, please contact your local
Sales Representative
MBR20H100CT/D