MBR20L45CTG, MBRF20L45CTG Switch-mode Power Rectifier 45 V, 20 A www.onsemi.com Features and Benefits • • • • • • DUAL SCHOTTKY BARRIER RECTIFIERS 20 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection 1 2, 4 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation MARKING DIAGRAMS 4 Mechanical Characteristics: • • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube These Devices are Pb−Free and are RoHS Compliant* AYWW B20L45G AKA TO−220 CASE 221A STYLE 6 1 2 3 TO−220 FULLPAKt B20L45G CASE 221D YWW STYLE 3 1 2 3 B20L45 A Y WW AKA G = Device Code = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Device ORDERING INFORMATION Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 3 1 Package Shipping MBR20L45CTG TO−220 (Pb−Free) 50 Units/Rail MBRF20L45CTG TO−220FP (Pb−Free) 50 Units/Rail Publication Order Number: MBR20L45CT/D MBR20L45CTG, MBRF20L45CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 141°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 180 A Operating Junction Temperature (Note 1) TJ −55 to +150 °C Storage Temperature Tstg −55 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms > 400 > 8000 V ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value RqJC RqJA RqJC 1.9 45 2.2 Symbol Value Unit °C/W Maximum Thermal Resistance (MBR20L45CTG) Junction−to−Case Junction−to−Ambient Junction−to−Case (MBRF20L45CTG) ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Unit V 0.50 0.47 0.63 0.62 mA 0.5 170 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%. www.onsemi.com 2 MBR20L45CTG, MBRF20L45CTG TYPICAL CHARACTERISTICS 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 150°C 125°C 1 75°C 25°C 0.1 0 0.1 0.2 0.3 10 150°C 125°C 1 75°C 25°C 0.1 0.4 0.5 0.6 0.8 0.7 0.9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1E+00 0.9 1E+00 150°C 1E−02 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 150°C 1E−01 1E−01 1E−02 125°C 1E−03 125°C 1E−03 75°C 1E−04 75°C 1E−04 1E−05 1E−05 25°C 25°C 1E−06 1E−06 5 10 15 20 25 30 35 40 45 50 0 5 10 VR, REVERSE VOLTAGE (V) 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) 0 Figure 4. Maximum Reverse Current 20 dc 15 Square Wave 10 5 0 100 105 110 115 120 125 130 135 140 145 150 155 TC, CASE TEMPERATURE (°C) Figure 5. Current Derating www.onsemi.com 3 45 50 MBR20L45CTG, MBRF20L45CTG TYPICAL CHARACTERISTICS 18 10000 Square Wave 14 C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) 16 12 10 dc 8 6 4 1000 2 0 100 R(t), TRANSIENT THERMAL RESISTANCE 0 5 10 0 20 15 5 10 15 20 25 35 30 Io, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 6. Forward Power Dissipation Figure 7. Typical Capacitance 40 45 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response Junction−to−Ambient for MBR20L45CTG 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case for MBR20L45CTG www.onsemi.com 4 100 1000 R(t), TRANSIENT THERMAL RESISTANCE MBR20L45CTG, MBRF20L45CTG 10 D = 0.5 1 0.1 0.2 0.1 0.05 0.01 P(pk) t1 0.01 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 10. Thermal Response Junction−to−Case for MBRF20L45CTG www.onsemi.com 5 100 1000 MBR20L45CTG, MBRF20L45CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. www.onsemi.com 6 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR20L45CTG, MBRF20L45CTG PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE FULLPAK is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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