MBRB4030G, NRVBB4030T4G Preferred Device SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features Guardring for Stress Protection Maximum Die Size 175C Operating Junction Temperature Short Heat Sink Tab Manufactured − Not Sheared AEC−Q101 Qualified and PPAP Capable NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* http://onsemi.com SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 30 VOLTS D2PAK CASE 418B STYLE 3 Mechanical Characteristics: Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 Weight: 1.7 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads Readily Solderable Device Meets MSL1 Requirements ESD Ratings: Machine Model = C (> 400 V) Human Body Model = 3B (> 8000 V) 1 4 3 MARKING DIAGRAM AY WW B4030G AKA A Y WW B4030 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 7 1 Publication Order Number: MBRB4030/D MBRB4030G, NRVBB4030T4G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current (At Rated VR) TC = +115C (Note 1) IF(AV) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz), TC = +112C IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg −65 to +175 C Operating Junction Temperature Range (Note 2) TJ −65 to +175 C dv/dt 10,000 V/ms W 600 mJ Voltage Rate of Change (Rated VR) Reverse Energy (Unclamped Inductive Surge), (TC = 25C, L = 3.0 mH) 40 80 300 A A A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Rating applies when pins 1 and 3 are connected. 2. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Case RqJC 1.0 C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 50 C/W Symbol Value Unit 3. Rating applies when surface mounted on the miniumum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Notes 4 and 5), per Device (IF = 20 A, TC = + 25C) (IF = 20 A, TC = +150C) (IF = 40 A, TC = + 25C) (IF = 40 A, TC = +150C) VF Maximum Instantaneous Reverse Current (Note 5), per Device (Rated DC Voltage, TC = + 25C) (Rated DC Voltage, TC = +125C) IR 0.46 0.34 0.55 0.45 0.35 150 V mA 4. Rating applies when pins 1 and 3 are connected. 5. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0% ORDERING INFORMATION Package Shipping† MBRB4030G D2PAK (Pb−Free) 50 Units / Rail MBRB4030T4G D2PAK (Pb−Free) 800 Units / Tape & Reel NRVBB4030T4G D2PAK (Pb−Free) 800 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBRB4030G, NRVBB4030T4G ELECTRICAL CHARACTERISTICS 100 I F, INSTANTANEOUS FORWARD CURRENT (A) (PIN 1 SHORTED TO PIN 3) I F, INSTANTANEOUS FORWARD CURRENT (A) (PIN 1 SHORTED TO PIN 3) 100 TJ = 150C 10 100C 1.0 0.1 0 25C 10 100C 1.0 0.2 0.4 0.6 0.3 0.5 VF, INSTANTANEOUS VOLTAGE (V) 0.1 TJ = 150C 0.7 0.1 0.8 0 0.1 0.4 0.2 0.3 0.5 VF, INSTANTANEOUS VOLTAGE (V) Figure 1. Maximum Forward Voltage 0.7 1.0 TJ = 150C I R , REVERSE CURRENT (A) TJ = 150C 0.1 100C 0.01 10-3 0.1 100C 0.01 10-3 10-4 0 5 25C 10-4 25C 20 10 15 VR, REVERSE VOLTAGE (V) 25 30 10-5 0 Figure 3. Maximum Reverse Current 5 15 20 10 VR, REVERSE VOLTAGE (V) TJ = 25C TYPICAL 1000 1 25 Figure 4. Typical Reverse Current 104 C, CAPACITANCE (pF) I R , REVERSE CURRENT (A) 0.6 Figure 2. Typical Forward Voltage 1.0 10-5 25C MAXIMUM 10 VR, REVERSE VOLTAGE (V) Figure 5. Maximum and Typical Capacitance http://onsemi.com 3 30 MBRB4030G, NRVBB4030T4G ELECTRICAL CHARACTERISTICS 20 DC 60 50 (RESISTIVE LOAD) IPK = 5.0 (CAPACITIVE IAV LOAD) SQUARE WAVE 40 30 10 20 10 20 0 100 110 120 140 130 TC, CASE TEMPERATURE (C) I F(AV), AVERAGE FORWARD CURRENT (A) (PIN 1 SHORTED TO PIN 3) I F(AV), AVERAGE FORWARD CURRENT (A) (PIN 1 SHORTED TO PIN 3) 70 RqJA = 25C/W DC (RESISTIVE LOAD) IPK = 5.0 (CAPACITIVE IAV LOAD) 10 10 5 20 0 150 DC 10 (RESISTIVE LOAD) SQUARE WAVE 8 IPK = 5.0 (CAPACITIVE IAV LOAD) 6 10 4 20 2 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 50 TJ = 150C (RESISTIVE LOAD) 40 IPK = 5.0 (CAPACITIVE IAV LOAD) 30 SQUARE WAVE 10 20 20 DC 10 0 0 30 50 40 60 20 IF(AV), AVERAGE FORWARD CURRENT (A) 10 Figure 8. Current Derating, Free Air 70 Figure 9. Forward Power Dissipation 1.0 R(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 Figure 7. Current Derating PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS) (PIN 1 SHORTED TO PIN 3) I F(AV), AVERAGE FORWARD CURRENT (A) (PIN 1 SHORTED TO PIN 3) RqJA = 50C/W 150 50 100 TA, AMBIENT TEMPERATURE (C) Figure 6. Current Derating, Infinite Heatsink 12 SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE SQUARE WAVE 15 SINGLE PULSE Ppk 0.1 0.01 Ppk tp TIME DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. t1 DTJL = Ppk RqJL [D + (1 - D) r(t1 + tp) + r(tp) - r(t1)] where DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, for example, r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.1 1.0 10 t, TIME (ms) Figure 10. Thermal Response http://onsemi.com 4 100 1000 80 MBRB4030G, NRVBB4030T4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K J G D M T B M N R P L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE U L M W H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE DIM A B C D E F G H J K L M N P R S V MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBRB4030G, NRVBB4030T4G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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