MBR4045WTG Switch Mode Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* http://onsemi.com SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 45 VOLTS 1 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 2, 4 3 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C TO−247 CASE 340AL 1 2 3 MARKING DIAGRAM MBR4045WT AYWWG MBR4045WT A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 9 1 Device Package Shipping MBR4045WTG TO−247 (Pb−Free) 30 Units/Rail Publication Order Number: MBR4045WT/D MBR4045WTG MAXIMUM RATINGS Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 45 V Average Rectified Forward Current Per Diode (Rated VR, TC = 125°C) Per Device IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90°C) Per Diode IFRM 40 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 400 A Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg −65 to +175 °C A 20 40 TJ −65 to +175 °C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 °C Voltage Rate of Change dv/dt 10,000 V/ms Operating Junction Temperature (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 1.4 °C/W Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 50.1 °C/W Min Typical Max Unit − − − − 0.52 0.47 0.65 0.63 0.70 0.60 0.80 0.75 − − 0.09 7.5 1.0 50 ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 2) @ IF = 20 Amps, TJ = 25°C @ IF = 20 Amps, TJ = 125°C @ IF = 40 Amps, TJ = 25°C @ IF = 40 Amps, TJ = 125°C VF Instantaneous Reverse Current (Note 2) @ Rated DC Voltage, TJ = 25°C @ Rated DC Voltage, TJ = 100°C IR V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0% http://onsemi.com 2 MBR4045WTG TYPICAL ELECTRICAL CHARACTERISTICS 100 I R, REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 10 TC = 150°C 1 TC = 100°C 100 TC = 150°C 10 TC = 100°C 1 0.1 TC = 25°C TC = 25°C 200 300 400 500 600 700 vF, INSTANTANEOUS FORWARD VOLTAGE (mV) 0.01 800 0 C, CAPACITANCE (pF) 10000 1000 100 1 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 Figure 2. Typical Reverse Current I F(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage 10 10 VR, REVERSE VOLTAGE (VOLTS) 100 30 25 20 15 DC SQUARE WAVE (VR = 45 V) 10 5 0 100 Figure 3. Typical Capacitance Per Leg 110 120 130 140 TC, CASE TEMPERATURE (°C) 150 Figure 4. Current Derating Per Leg http://onsemi.com 3 160 MBR4045WTG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M B A P A E2/2 Q E2 NOTE 4 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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