MBR3045WTG Switch Mode Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for • • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS Parallel Operation at Full Rating Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Popular TO−247 Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 1 2 3 4 Mechanical Characteristics • Case: Epoxy, Molded • Weight: 4.3 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 1 2 260°C Max. for 10 Seconds TO−247 CASE 340AL 3 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current Per Device (Rated VR, TC = 105°C) Per Diode IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz) Per Diode IFRM 30 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) Per Diode (See Figure 6) IRRM 2.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms A 30 15 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 5 MARKING DIAGRAM 1 MBR3045WT AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR3045WTG TO−247 (Pb−Free) 30 Units/Rail Publication Order Number: MBR3045WT/D MBR3045WTG THERMAL CHARACTERISTICS (Per Diode) Rating Thermal Resistance, Junction−to−Case Junction−to−Ambient Symbol Max Unit RqJC RqJA 1.4 40 °C/W ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 2) (iF = 20 Amps, TC = 125°C) (iF = 30 Amps, TC = 125°C) (iF = 30 Amps, TC = 25°C) vF Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR V 0.6 0.72 0.76 mA 100 1.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 100 50 30 20 100 TJ = 150°C 10 IR , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 25°C 5.0 3.0 2.0 1.0 0.5 0.3 0.2 TJ = 150°C 125°C 10 100°C 1.0 75°C 0.1 25°C 0.01 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 5.0 10 15 20 25 30 35 40 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 2 45 50 MBR3045WTG 20 I I PK + p(RESISTIVELOAD) AV 15 SQUARE WAVE 10 dc 5.0 I (CAPACITIVELOAD) PK + 20, 10, 5 I AV 0 60 70 80 90 100 110 120 130 140 150 160 TC, CASE TEMPERATURE (°C) PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 20 I (CAPACITIVELOAD) PK + 20, 10, 5 I SINE WAVE RESISTIVE LOAD AV 15 SQUARE WAVE 10 dc TJ = 125°C 5.0 0 0 Figure 3. Current Derating (Per Leg) 5.0 10 15 20 25 30 35 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Forward Power Dissipation (Per Leg) +150 V, 10 mAdc 2.0 kW 3000 VCC C, CAPACITANCE (pF) 2000 12 Vdc D.U.T. 12 V 100 2N2222 1000 900 800 700 600 500 + 4.0 mF 2.0 ms 1.0 kHz CURRENT AMPLITUDE ADJUST 0-10 AMPS 400 100 W CARBON 2N6277 1.0 CARBON 300 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1N5817 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitance Figure 6. Test Circuit for Repetitive Reverse Current http://onsemi.com 3 40 MBR3045WTG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M B A P A E2/2 Q E2 NOTE 4 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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