MBR4015LWTG Switch Mode Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 15 VOLTS Features • • • • • • Highly Stable Oxide Passivated Junction Guardring for Overvoltage Protection Low Forward Voltage Drop Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating. Full Electrical Isolation without Additional Hardware These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 1 2 3 Mechanical Characteristics • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−247 CASE 340AL 1 2 3 MARKING DIAGRAM MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 15 V Average Rectified Forward Current Per Leg (At Rated VR, TC = 120°C) Per Package IO Peak Repetitive Forward Current, (At Rated VR, Square Wave, 20 kHz, TC = 95°C) Per Leg IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Per Package IFSM 120 A Storage/Operating Case Temperature Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Operating Junction Temperature (Note 1) Voltage Rate of Change, (Rated VR, TJ = 25°C) A 20 40 40 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 10 MBR4015LWT AYWWG 1 MBR4015LWT A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR4015LWTG TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: MBR4015LWT/D MBR4015LWTG THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Case Junction−to−Ambient Per Leg Per Leg Symbol Value Unit RqJC RqJA 0.57 55 °C/W Value Unit ELECTRICAL CHARACTERISTICS Rating Symbol VF Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 Per Leg TJ = 25°C TJ = 100°C 0.42 0.50 0.36 0.48 TJ = 25°C TJ = 100°C 5.0 2.7 530 370 (IF = 20 A) (IF = 40 A) IR Maximum Instantaneous Reverse Current (Note 2), See Figure 4 Per Leg (VR = 15 V) (VR = 7.5 V) V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 1000 100 TJ = 100°C 10 TJ = 25°C 1.0 TJ = -40°C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1000 100 TJ = 100°C 10 TJ = 25°C 1.0 0.1 0 0.6 0.8 1.0 1.2 Figure 2. Maximum Forward Voltage Per Leg I R, MAXIMUM REVERSE CURRENT (AMPS) 10E+0 I R, REVERSE CURRENT (AMPS) 0.4 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Per Leg 1.0E+0 100E-3 0.2 10E+0 1.0E+0 TJ = 100°C 100E-3 TJ = 100°C 10E-3 1.0E-3 TJ = 25°C 10E-3 TJ = 25°C 1.0E-3 100E-6 100E-6 0 5.0 10 15 0 5.0 10 VR, REVERSE VOLTAGE (V) V VR,, REVERSE REVERSE VOLTAGE VOLTAGE (VOLTS) (V) Figure 3. Typical Reverse Current Per Leg Figure 4. Maximum Reverse Current Per Leg http://onsemi.com 2 15 MBR4015LWTG TYPICAL CHARACTERISTICS PFO , AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (A) 40 DC 30 SQUAREWAVE 20 10 0 20 40 60 80 100 120 Ipk/Io = 5 SQUARE WAVE dc Ipk/Io = 10 10 Ipk/Io = 20 8.0 6.0 4.0 2.0 0 5.0 15 10 20 30 25 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Per Leg Figure 6. Forward Power Dissipation Per Leg TJ = 25°C C, CAPACITANCE (pF) 12 0 10,000 1000 100 0 Ipk/Io = p 140 2.0 4.0 6.0 8.0 10 12 14 16 TJ, DERATED OPERATING TEMPERATURE (°C) 0 14 35 125 115 Rtja = 21°C/W 105 95 42°C/W 85 60°C/W 75 75°C/W 65 0 2.0 4.0 6.0 8.0 10 12 14 VR, REVERSE VOLTAGE (V) VR, DC REVERSE VOLTAGE (V) Figure 7. Capacitance Per Leg Figure 8. Typical Operating Temperature Derating Per Leg* 16 *Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 3 MBR4015LWTG R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL CHARACTERISTICS 1.0 50% 20% 10% 5.0% 0.1 2.0% 1.0% Rtjl(t) = Rtjl*r(t) 0.01 0.00001 0.0001 0.001 0.01 0.1 1.0 10 T, TIME (s) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Thermal Response Junction to Lead (Per Leg) 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% 1.0% 0.001 Rtjl(t) = Rtjl*r(t) 0.0001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 T, TIME (s) Figure 10. Thermal Response Junction to Ambient (Per Leg) http://onsemi.com 4 100 1,000 MBR4015LWTG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M B A P A E2/2 Q E2 NOTE 4 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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