NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. www.onsemi.com 50 A, 600 V VCEsat = 1.80 V EOFF = 0.46 mJ Features • • • • • TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability This is a Pb−Free Device C Typical Applications • Welding G ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC Diode Forward Current @ TC = 25°C @ TC = 100°C IF E A 100 50 A 100 50 G C Diode Pulsed Current TPULSE Limited by TJ Max IFM 200 A Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 ms Gate−emitter voltage VGE $20 V V TO−247 CASE 340AL E MARKING DIAGRAM $30 Transient gate−emitter voltage (TPULSE = 5 ms, D < 0.10) Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C 50N60S1 AYWWG W 417 208 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB50N60S1WG © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 1 1 Package Shipping TO−247 (Pb−Free) 30 Units / Rail Publication Order Number: NGTB50N60S1W/D NGTB50N60S1WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.36 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.60 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCEsat 1.50 − 1.80 2.19 2.00 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage VGE = VCE, IC = 350 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − − − 0.5 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 5328 − pF Coes − 252 − Cres − 148 − Qg − 220 − Qge − 52 − Qgc − 116 − td(on) − 100 − Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 50 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time tr − 47 − td(off) − 237 − tf − 67 − Eon − 1.50 − Eoff − 0.46 − Total switching loss Ets − 1.96 − Turn−on delay time td(on) − 90 − tr − 49 − td(off) − 245 − tf − 96 − Eon − 1.90 − Turn−off switching loss Eoff − 0.83 − Total switching loss Ets − 2.73 − VF − − 2.10 2.20 2.90 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V Turn−off switching loss Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 W VGE = 0 V/ 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current VGE = 0 V, IF = 50 A VGE = 0 V, IF = 50 A, TJ = 175°C TJ = 25°C IF = 50 A, VR = 400 V diF/dt = 200 A/ms V trr − 94 − ns Qrr − 0.45 − mC Irrm − 8 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB50N60S1WG TYPICAL CHARACTERISTICS 160 140 13 V 120 100 80 11 V 60 10 V 40 7V 20 9V 8V 0 0 1 2 3 4 7 6 VGE = 17 V to 20 V 100 11 V 60 10 V 40 9V 20 8V 7V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics Coes 100 Cres TJ = 25°C 10 20 30 40 50 8 70 60 80 70 60 50 40 30 20 TJ = 150°C 10 TJ = 25°C 0 90 100 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 4.0 VF, FORWARD VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Typical Capacitance Figure 4. Diode Forward Characteristics 6 16 14 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W 5 12 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 13 V 80 8 Cies 0 120 15 V 0 5 1000 10 TJ = 150°C 140 VCE, COLLECTOR−EMITTER VOLTAGE (V) 10,000 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) TJ = 25°C VGE = 15 V to 20 V IF, FORWARD CURRENT (A) IC, COLLECTOR CURRENT (A) 160 10 8 6 4 VCE = 480 V VGE = 15 V IC = 50 A 2 0 0 50 100 150 200 Eon 4 3 Eoff 2 1 0 15 250 25 35 45 55 65 75 85 QG, GATE CHARGE (nC) IC, COLLECTOR CURRENT (A) Figure 5. Typical Gate Charge Figure 6. Switching Loss vs. IC www.onsemi.com 3 95 105 NGTB50N60S1WG TYPICAL CHARACTERISTICS 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 1000 td(off) tf 100 td(on) VCE = 400 V VGE = 15 V TJ = 150°C Rg = 10 W tr 10 15 25 35 45 55 65 75 85 95 100 50 ms dc operation 100 ms 10 0.1 1 105 1 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) Figure 7. Switching Time vs. IC Figure 8. Safe Operating Area SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.36 50% Duty Cycle 0.1 20% 10% 5% R1 Junction R2 Rn Case 2% 0.01 C1 0.001 Cn C2 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse Ri (°C/W) Ci (J/°C) 0.020315 0.034265 0.021803 0.054410 0.113326 0.040172 0.004922 0.009229 0.045865 0.058120 0.088241 0.787180 0.0001 0.000001 0.00001 0.001 0.0001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 9. IGBT Transient Thermal Impedance SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.60 50% Duty Cycle 20% 0.1 10% 5% Junction R1 R2 Rn C1 C2 Cn 2% 0.01 Single Pulse Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.001 0.000001 0.00001 0.0001 0.001 0.01 ON−PULSE WIDTH (s) Figure 10. Diode Transient Thermal Impedance www.onsemi.com 4 Case Ri (°C/W) Ci (J/°C) 0.007870 0.000226 0.010372 0.011062 0.028387 0.044253 0.107682 0.052942 0.069559 0.136936 0.000127 0.014008 0.000964 0.002859 0.003523 0.007146 0.009287 0.059731 0.143762 0.230931 0.776456 0.1 1 NGTB50N60S1WG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M P A Q E2 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 E2/2 NOTE 4 B A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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