NGTB50N60S1W D

NGTB50N60S1WG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
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50 A, 600 V
VCEsat = 1.80 V
EOFF = 0.46 mJ
Features
•
•
•
•
•
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5 ms Short−Circuit Capability
This is a Pb−Free Device
C
Typical Applications
• Welding
G
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
E
A
100
50
A
100
50
G
C
Diode Pulsed Current
TPULSE Limited by TJ Max
IFM
200
A
Pulsed collector current, Tpulse
limited by TJmax
ICM
200
A
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
tSC
5
ms
Gate−emitter voltage
VGE
$20
V
V
TO−247
CASE 340AL
E
MARKING DIAGRAM
$30
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
50N60S1
AYWWG
W
417
208
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB50N60S1WG
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 1
1
Package
Shipping
TO−247
(Pb−Free)
30 Units / Rail
Publication Order Number:
NGTB50N60S1W/D
NGTB50N60S1WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.36
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.60
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 50 A, TJ = 175°C
VCEsat
1.50
−
1.80
2.19
2.00
−
V
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
VGE = VCE, IC = 350 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
−
−
0.5
4.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
5328
−
pF
Coes
−
252
−
Cres
−
148
−
Qg
−
220
−
Qge
−
52
−
Qgc
−
116
−
td(on)
−
100
−
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 50 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
tr
−
47
−
td(off)
−
237
−
tf
−
67
−
Eon
−
1.50
−
Eoff
−
0.46
−
Total switching loss
Ets
−
1.96
−
Turn−on delay time
td(on)
−
90
−
tr
−
49
−
td(off)
−
245
−
tf
−
96
−
Eon
−
1.90
−
Turn−off switching loss
Eoff
−
0.83
−
Total switching loss
Ets
−
2.73
−
VF
−
−
2.10
2.20
2.90
−
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V
Turn−off switching loss
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 150°C
VCC = 400 V, IC = 50 A
Rg = 10 W
VGE = 0 V/ 15 V
ns
mJ
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGE = 0 V, IF = 50 A
VGE = 0 V, IF = 50 A, TJ = 175°C
TJ = 25°C
IF = 50 A, VR = 400 V
diF/dt = 200 A/ms
V
trr
−
94
−
ns
Qrr
−
0.45
−
mC
Irrm
−
8
−
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NGTB50N60S1WG
TYPICAL CHARACTERISTICS
160
140
13 V
120
100
80
11 V
60
10 V
40
7V
20
9V
8V
0
0
1
2
3
4
7
6
VGE = 17 V
to 20 V
100
11 V
60
10 V
40
9V
20
8V
7V
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Coes
100
Cres
TJ = 25°C
10
20
30
40
50
8
70
60
80
70
60
50
40
30
20
TJ = 150°C
10
TJ = 25°C
0
90 100
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
4.0
VF, FORWARD VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Typical Capacitance
Figure 4. Diode Forward Characteristics
6
16
14
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
5
12
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
13 V
80
8
Cies
0
120
15 V
0
5
1000
10
TJ = 150°C
140
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10,000
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
VGE = 15 V
to 20 V
IF, FORWARD CURRENT (A)
IC, COLLECTOR CURRENT (A)
160
10
8
6
4
VCE = 480 V
VGE = 15 V
IC = 50 A
2
0
0
50
100
150
200
Eon
4
3
Eoff
2
1
0
15
250
25
35
45
55
65
75
85
QG, GATE CHARGE (nC)
IC, COLLECTOR CURRENT (A)
Figure 5. Typical Gate Charge
Figure 6. Switching Loss vs. IC
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3
95
105
NGTB50N60S1WG
TYPICAL CHARACTERISTICS
1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
1000
td(off)
tf
100 td(on)
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
tr
10
15
25
35
45
55
65
75
85
95
100
50 ms
dc operation
100 ms
10
0.1
1
105
1 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
Figure 7. Switching Time vs. IC
Figure 8. Safe Operating Area
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.36
50% Duty Cycle
0.1 20%
10%
5%
R1
Junction
R2
Rn
Case
2%
0.01
C1
0.001
Cn
C2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
Ri (°C/W)
Ci (J/°C)
0.020315
0.034265
0.021803
0.054410
0.113326
0.040172
0.004922
0.009229
0.045865
0.058120
0.088241
0.787180
0.0001
0.000001
0.00001
0.001
0.0001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 9. IGBT Transient Thermal Impedance
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.60
50% Duty Cycle
20%
0.1 10%
5%
Junction R1
R2
Rn
C1
C2
Cn
2%
0.01
Single Pulse
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.001
0.000001
0.00001
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 10. Diode Transient Thermal Impedance
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4
Case
Ri (°C/W)
Ci (J/°C)
0.007870
0.000226
0.010372
0.011062
0.028387
0.044253
0.107682
0.052942
0.069559
0.136936
0.000127
0.014008
0.000964
0.002859
0.003523
0.007146
0.009287
0.059731
0.143762
0.230931
0.776456
0.1
1
NGTB50N60S1WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
B
A
NOTE 4
E
SEATING
PLANE
0.635
M
P
A
Q
E2
D
S
NOTE 3
1
2
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
L
L1
P
Q
S
3
L1
NOTE 5
L
2X
b2
c
b4
3X
e
A1
b
0.25
NOTE 7
M
B A
M
NOTE 6
E2/2
NOTE 4
B A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.00
1.40
1.65
2.35
2.60
3.40
0.40
0.80
20.30
21.40
15.50
16.25
4.32
5.49
5.45 BSC
19.80
20.80
3.50
4.50
3.55
3.65
5.40
6.20
6.15 BSC
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NGTB50N60S1W/D