NSD914F3 D

NSD914F3T5G
High-Speed Switching
Diode
The NSD914F3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for high speed switching
applications and is housed in the SOT−1123 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
Features
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3
CATHODE
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
NSD914F3T5G
MAXIMUM RATINGS
Rating
3
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
(Note 1)
290
2.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RJA
(Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
(Note 2)
347
2.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RJA
(Note 2)
360
°C/W
Thermal Resistance,
Junction−to−Lead 3
RJL
(Note 2)
143
°C/W
TJ, Tstg
−55 to
+150
°C
Peak Forward Surge Current
1
ANODE
1
2
SOT−1123
CASE 524AA
STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Junction and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
1
MARKING DIAGRAM
RM
R
M
= Device Code
= Date Code
ORDERING INFORMATION
Device
NSD914F3T5G
Package
Shipping†
SOT−1123 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSD914F3/D
NSD914F3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)
100
−
−
Vdc
−
−
−
−
25
5.0
nAdc
Adc
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 Adc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
−
−
4.0
pF
Forward Voltage
(IF = 10 mAdc)
VF
−
−
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
−
−
4.0
ns
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
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2
NSD914F3T5G
820 +10 V
2.0 k
IF
100 H
tr
0.1 F
tp
IF
t
trr
10%
t
0.1 F
90%
DUT
50 INPUT
SAMPLING
OSCILLOSCOPE
50 OUTPUT
PULSE
GENERATOR
iR(REC) = 1.0 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
INPUT SIGNAL
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
I R , REVERSE CURRENT ( A)
TA = 85°C
TA = -40°C
10
TA = 25°C
1.0
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
0
10
20
30
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
C D , DIODE CAPACITANCE (pF)
I F, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8.0
40
50
NSD914F3T5G
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA−01
ISSUE A
−X−
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
−Y−
1
E
3
2
b
e
0.08 (0.0032) X Y
DIM
A
b
b1
c
D
E
e
HE
L
A
c
L
HE
MILLIMETERS
MIN
NOM MAX
0.34
0.37
0.40
0.15
0.20
0.25
0.10
0.15
0.20
0.07
0.12
0.17
0.75
0.80
0.85
0.55
0.60
0.65
0.35
0.95
1.00
1.05
0.05
0.10
0.15
MAX
0.016
0.010
0.008
0.007
0.033
0.026
0.041
0.006
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
SOLDERING FOOTPRINT*
0.35
INCHES
NOM
0.015
0.008
0.006
0.005
0.031
0.024
0.014
0.037 0.039
0.002 0.004
MIN
0.013
0.006
0.004
0.003
0.030
0.022
0.30
0.25
0.40
0.90
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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Phone: 81−3−5773−3850
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ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
NSD914F3/D