LESHAN RADIO COMPANY, LTD. NPN General Purpose Transistor LNST3904F3T5G The LNST3904F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • • • • COLLECTOR 3 1 BASE hFE, 100−300 Low VCE(sat), ≤ 0.4 V Reduces Board Space This is a Pb−Free Device 2 EMITTER LNST3904F3T5G MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 200 mAdc Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 290 2.3 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 432 °C/W Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 2) 347 2.8 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 360 °C/W Thermal Resistance, Junction−to−Lead 3 RYJL (Note 2) 143 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 1 SOT−1123 CASE 524AA STYLE 1 THERMAL CHARACTERISTICS Characteristic Junction and Storage Temperature Range 2 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 100 mm2 1 oz, copper traces. 2. 500 mm2 1 oz, copper traces. 2M 2 M = Device Code = Date Code ORDERING INFORMATION Device LNST3904F3T5G Package Shipping† SOT−1123 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1/4 LESHAN RADIO COMPANY, LTD. LNST3904F3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc 40 70 100 60 30 − − 300 − − − − 0.2 0.3 0.65 − 0.85 1.0 fT 200 − MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) NF − 5.0 dB Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) td − 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts − 275 Fall Time (IB1 = IB2 = 1.0 mAdc) tf − 50 ns ns 3. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%. 400 IC/IB = 10 0.23 VCE(sat) = 150°C hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.28 0.18 25°C 0.13 −55°C 0.08 0.03 350 150°C (5.0 V) 300 150°C (1.0 V) 250 25°C (5.0 V) 200 25°C (1.0 V) 150 −55°C (5.0 V) 100 −55°C (1.0 V) 50 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 1 0.0001 0.001 0.1 0.01 IC, COLLECTOR CURRENT (A) 1 Figure 2. DC Current Gain vs. Collector Current 2/4 LESHAN RADIO COMPANY, LTD. LNST3904F3T5G 1.0 0.9 1.1 IC/IB = 10 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 1 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 1 Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Turn−On Voltage vs. Collector Current 8.0 Cibo, INPUT CAPACITANCE (pF) 1.8 IC = 100 mA 1.4 80 mA 1.2 1.0 0.8 60 mA 0.6 40 mA 20 mA 0.0001 0.001 0.01 7.5 7.0 6.5 6.0 5.5 Cib 5.0 4.5 4.0 3.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region Figure 6. Input Capacitance 4.5 5.0 3.0 Cobo, OUTPUT CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) −55°C 0.8 IC, COLLECTOR CURRENT (A) 1.6 0.2 0 0.9 IC, COLLECTOR CURRENT (A) 2.0 0.4 VCE = 2.0 V 1.0 2.5 2.0 1.5 Cob 1.0 0.5 0 5.0 10 15 20 25 30 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance 3/4 LESHAN RADIO COMPANY, LTD. LNST3904F3T5G PACKAGE DIMENSIONS SOT−1123 −X− D b1 −Y− 1 E 3 2 b e 0.08 (0.0032) X Y A c L HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b b1 c D E e HE L MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.10 0.15 0.20 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.35 0.95 1.00 1.05 0.05 0.10 0.15 SOLDERING FOOTPRINT* 0.35 INCHES NOM 0.015 0.008 0.006 0.005 0.031 0.024 0.014 0.037 0.039 0.002 0.004 MIN 0.013 0.006 0.004 0.003 0.030 0.022 MAX 0.016 0.010 0.008 0.007 0.033 0.026 0.041 0.006 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.30 0.25 0.90 0.40 DIMENSIONS: MILLIMETERS 4/4