NST847BF3T5G NPN General Purpose Transistor The NST847BF3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com COLLECTOR 3 Features • • • • hFE, 200−450 Low VCE(sat), ≤ 0.25 V Reduces Board Space This is a Pb−Free Device 1 BASE 2 EMITTER NST847BF3T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 50 Vdc Emitter −Base Voltage VEBO 6.0 Vdc IC 100 mAdc Collector Current − Continuous 3 1 SOT−1123 CASE 524AA STYLE 1 THERMAL CHARACTERISTICS Characteristic 2 Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 290 2.3 mW mW/°C MARKING DIAGRAM Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 432 °C/W 4M Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 2) 347 2.8 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 360 °C/W Thermal Resistance, Junction−to−Lead 3 RYJL (Note 2) 143 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C April, 2008 − Rev. 0 1 = Device Code = Date Code ORDERING INFORMATION Device NST847BF3T5G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 100 mm2 1 oz, copper traces. 2. 500 mm2 1 oz, copper traces. © Semiconductor Components Industries, LLC, 2008 4 M Package Shipping† SOT−1123 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NST847BF3/D NST847BF3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 45 − − V Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) V(BR)CES 50 − − V Collector −Base Breakdown Voltage (IC = 10 mA) V(BR)CBO 50 − − V Emitter −Base Breakdown Voltage (IE = 1.0 mA) V(BR)EBO 6.0 − − V ICBO − − − − 15 5.0 nA mA − 200 150 290 − 450 Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE − Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV fT 100 − − MHz Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Input Capacitance (VEB = 0.5 V, IC = 0 mA, f = 1.0 MHz) Cibo − − 10 pF Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) 0.16 600 150°C (5.0 V) IC/IB = 10 hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.18 0.14 0.12 VCE(sat) = 150°C 0.10 0.08 25°C 0.06 0.04 0.02 0.0001 500 150°C (1.0 V) 400 25°C (5.0 V) 300 25°C (1.0 V) 200 −55°C (5.0 V) 100 −55°C (1.0 V) −55°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 0 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 2. DC Current Gain vs. Collector Current http://onsemi.com 2 NST847BF3T5G 1.0 0.8 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) 0.9 IC/IB = 10 −55°C 0.7 0.6 25°C 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 0.8 −55°C 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Turn−On Voltage vs. Collector Current 1.0 7.0 IC = 100 mA 0.9 0.8 0.7 50 mA 0.6 0.5 0.4 30 mA 0.3 0.2 0.1 0 0.00001 10 mA 0.0001 0.001 0.01 6.5 6.0 5.5 5.0 Cib 4.5 4.0 3.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region Figure 6. Input Capacitance 2.5 Cobo, OUTPUT CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 2.0 V 0.9 IC, COLLECTOR CURRENT (A) Cibo, INPUT CAPACITANCE (pF) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 2.3 2.1 1.9 1.7 1.5 1.3 1.1 Cob 0.9 0.7 0 5 10 15 20 25 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance http://onsemi.com 3 30 4.5 5.0 NST847BF3T5G PACKAGE DIMENSIONS SOT−1123 CASE 524AA−01 ISSUE A −X− D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− 1 E 3 2 b e 0.08 (0.0032) X Y DIM A b b1 c D E e HE L A c L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.10 0.15 0.20 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.35 0.95 1.00 1.05 0.05 0.10 0.15 MAX 0.016 0.010 0.008 0.007 0.033 0.026 0.041 0.006 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.35 INCHES NOM 0.015 0.008 0.006 0.005 0.031 0.024 0.014 0.037 0.039 0.002 0.004 MIN 0.013 0.006 0.004 0.003 0.030 0.022 0.30 0.25 0.40 0.90 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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