NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N−Channel, DPAK http://onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. Thermal protection includes a latch which can be reset by toggling the input. This device is suitable for harsh automotive environments. VDSS (Clamped) RDS(on) TYP ID MAX (Limited) 42 V 55 mW @ 5 V 10 A Drain (2,4) Features • • • • • • • • • • Short Circuit Protection Thermal Shutdown with Latched Reset Gate Input Current Flag During Latched Fault Condition Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Overvoltage Protection Gate Input (1) ESD Protection Temperature Limit Current Limit Source (3) 4 MARKING DIAGRAM Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial Current Sense 1 2 3 Gate DPAK CASE 369C STYLE 2 Drain YWW V8408G Drain Source Y = Year WW = Work Week V8408 = Specific Device Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NCV8408DTRKG DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 5 1 Publication Order Number: NCV8408/D NCV8408 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate−to−Source Voltage Symbol Value Unit VDSS 42 Vdc VDGR 42 V VGS ±14 Vdc Continuous Drain Current ID Gate Input Current (VGS = ±14 VDC) IGS Internally Limited ±10 Source to Drain Current ISD 4.0 Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) PD mA A W 1.8 2.3 °C/W Thermal Resistance Junction−to−Ambient Steady State (Note 1) Junction−to−Ambient Steady State (Note 2) Junction−to−Tab Steady State (Note 3) Single Pulse Inductive Load Switching Energy (VDD = 20 Vdc, VGS = 5.0 V, IL = 8.0 A) Repetitive Pulse Inductive Load Switching Energy (VDD = 20 Vdc, VGS = 5.0 V, IL = 8.0 A, TJ = 25°C) Repetitive Pulse Inductive Load Switching Energy (VDD = 20 Vdc, VGS = 5.0 V, IL = 6.8 A, TJ = 105°C) Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms, TJ = 25°C) RqJA RqJA RqJT 70 55 2.1 EAS 185 EAR 128 EAR 92 mJ VLD 63 V Operating Junction Temperature TJ −40 to 150 °C Storage Temperature Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted onto minimum pad FR4 PCB (1 oz Cu, 0.06” thick). 2. Surface−mounted onto 2″ square FR4 PCB, (1″ square, 1 oz Cu, 0.06” thick). 3. Surface−mounted onto minimum pad FR4 PCB (2 oz Cu, 0.06” thick). + ID DRAIN IG + VDS GATE SOURCE VGS IS − − Figure 1. Voltage and Current Convention http://onsemi.com 2 NCV8408 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Test Conditions Characteristic Symbol Min Typ Max Unit 42 40 43 46 45 47 51 51 51 − − 0.6 2.5 5.0 10 − 25 50 mA mA OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Clamped Breakdown Voltage (Note 4) (VGS = 0 V, ID = 10 mA, TJ = 25°C) (VGS = 0 V, ID = 10 mA, TJ = 150°C) (Note 6) (VGS = 0 V, ID = 10 mA, TJ = −40°C) (Note 6) Zero Gate Voltage Drain Current (VGS = 0 V, VDS = 32 V, TJ = 25°C) (VGS = 0 V, VDS = 32 V, TJ = 150°C) (Note 6) V mA IDSS INPUT CHARACTERISTICS (Note 4) Gate Input Current − Normal Operation (VGS = 5.0 V) IGSSF Gate Input Current − Protection Latched (VGS = 5.0 V) (Note 6) IGSSL − 440 − Gate Threshold Voltage (VGS = VDS, ID = 1 mA) VGS(th) 1.0 1.7 2.2 V VGS(th)/TJ − 5.0 − −mV/°C Gate Threshold Temperature Coefficient Latched Reset Voltage (Note 6) VLR 0.8 1.4 1.9 V Latched Reset Time (VGS = 5.0 V to VGS < 1 V) (Note 6) tLR 10 40 100 ms − 25.5 − kW − − 55 100 60 120 − 0.95 − −15 −15 −5 −20 − − − − 15 15 5 20 td(ON) 10 20 tr 20 40 td(OFF) 30 60 tf 20 40 Slew−Rate ON (90% VD to 10% VD) −dVDS/dtON 0.5 Slew−Rate OFF (10% VD to 90% VD) dVDS/dtOFF 0.5 Internal Gate Input Resistance ON CHARACTERISTICS (Note 4) RDS(on) Static Drain−to−Source On−Resistance (VGS = 5.0 V, ID = 3.0 A, TJ @ 25°C) (VGS = 5.0 V, ID = 3.0 A, TJ @ 150°C) (Note 6) Source−Drain Forward On Voltage (VGS = 0 V, IS = 7.0 A) VSD mW V SWITCHING CHARACTERISTICS (Note 6) Turn−OFF/ON Slew Rate Matching VGS = 5.0 V, VDS = 13 V, RL = 4 W; TJ = −40°C TJ = 150°C TJ = 25°C −40°C < TJ < 150°C Turn−ON Delay Time TMatch Rise Time (10% ID to 90% ID) Turn−OFF Delay Time VGS = 5 V, VDS = 13 V RL = 4 W, −40°C < TJ < 150°C Fall Time (90% ID to 10% ID) % ms V/ms SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) ILIM Current Limit VGS = 5.0 V, VDS = 10 V, TJ @ 25°C VGS = 5.0 V, VDS = 10 V, TJ = 150°C (Note 6) VGS = 5.0 V, VDS = 10 V, TJ = −40°C (Note 6) Temperature Limit (Turn−off) VGS = 5.0 V VGS = 10 V A 10 10 9 13 − − 16 18 16 TLIM(off) 150 150 175 165 200 185 °C ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro−Static Discharge Capability Human Body Model (HBM) ESD 4000 − − V Electro−Static Discharge Capability Machine Model (MM) ESD 400 − − V 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. 6. Not subject to production testing. http://onsemi.com 3 NCV8408 TEST CIRCUITS AND WAVEFORMS 4W RL ID VIN + D 5V VDD G − 13 V 0V S Figure 2. Resistive Load Switching Test Circuit 90% VIN 10% td(ON) tr td(OFF) tf 90% ID 10% 90% VDS 10% Figure 3. Resistive Load Switching Waveforms http://onsemi.com 4 NCV8408 TEST CIRCUITS AND WAVEFORMS L VDS VIN D G DUT S tp Figure 4. Inductive Load Switching Test Circuit VIN Tp Tav V(BR)DSS VDS VDS(on) Ipk ID Figure 5. Inductive Load Switching Waveforms http://onsemi.com 5 + VDD − NCV8408 VIN IG ID TJ Figure 6. Short−Circuit Protection Behavior Figure 7. Turn on into Short Circuit Device Response http://onsemi.com 6 NCV8408 TYPICAL CHARACTERISTICS 1000 10 VDD = 20 V VDD = 20 V CURRENT (A) ENERGY (mJ) 25°C 150°C 25°C 150°C 1 100 10 100 10 100 INDUCTANCE (mH) INDUCTANCE (mH) Figure 8. NCV8408 Maximum Switch Off Energy vs Inductance Figure 9. NCV8408 Maximum Switch Off Current vs Inductance 600 18 ID = 3 A 16 500 150°C 14 ILIM (A) 12 300 200 150°C 125°C 100 25°C −40°C 0 −40°C 25°C 8 4 2 0 2 4 6 8 10 12 5 8 7 Figure 11. Current Limit vs. Gate Voltage 7V 9V 200 8V 180 14 160 10 ID = 3 A 140 5V 10 V 4V 8 3V 6 120 100 80 150°C 125°C 60 4 40 VGS = 2.5 V 2 6 4 25°C −40°C 20 0 2 10 Figure 10. VGS vs VDS 16 0 9 VGS (V) 6V 12 6 VGS (V) 18 ID (A) 125°C 10 6 RDS(on) (mW) VDS (V) 400 0 10 8 2 4 6 8 10 VDS (V) VGS (V) Figure 12. Drain Current vs. Drain Voltage Figure 13. RDS(on) vs. Gate Voltage http://onsemi.com 7 12 NCV8408 TYPICAL CHARACTERISTICS 120 100 TIME (ms) 80 tr 60 td(off) 40 tf 20 td(on) 0 2 3 4 5 6 7 8 9 10 VGS (V) Figure 14. Resistive Switching 180 TA = 25°C 160 140 qJA (°C/W) 120 100 qJA curve with PCB cu thk 1 80 60 qJA curve with PCB cu thk 2 40 20 0 0 100 200 300 400 500 600 COPPER HEAT SPREADER AREA (mm2) 700 Figure 15. RqJA vs. Copper Area 100 Duty Cycle = 50% R(t) (°C/W) 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (s) Figure 16. Transient Thermal Resistance http://onsemi.com 8 10 100 1000 NCV8408 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C A A E b3 c2 B 4 L3 Z D 1 2 H DETAIL A 3 L4 b2 e c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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