NCV8408 D

NCV8408
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 10 A, Single N−Channel, DPAK
http://onsemi.com
NCV8408 is a single channel protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
Thermal protection includes a latch which can be reset by toggling the
input. This device is suitable for harsh automotive environments.
VDSS
(Clamped)
RDS(on) TYP
ID MAX
(Limited)
42 V
55 mW @ 5 V
10 A
Drain (2,4)
Features
•
•
•
•
•
•
•
•
•
•
Short Circuit Protection
Thermal Shutdown with Latched Reset
Gate Input Current Flag During Latched Fault Condition
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Overvoltage
Protection
Gate
Input (1)
ESD Protection
Temperature
Limit
Current
Limit
Source (3)
4
MARKING
DIAGRAM
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
Current
Sense
1 2
3
Gate
DPAK
CASE 369C
STYLE 2
Drain
YWW
V8408G
Drain
Source
Y
= Year
WW
= Work Week
V8408 = Specific Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NCV8408DTRKG
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 5
1
Publication Order Number:
NCV8408/D
NCV8408
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
(RGS = 1.0 MW)
Gate−to−Source Voltage
Symbol
Value
Unit
VDSS
42
Vdc
VDGR
42
V
VGS
±14
Vdc
Continuous Drain Current
ID
Gate Input Current (VGS = ±14 VDC)
IGS
Internally Limited
±10
Source to Drain Current
ISD
4.0
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD
mA
A
W
1.8
2.3
°C/W
Thermal Resistance
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 3)
Single Pulse Inductive Load Switching Energy
(VDD = 20 Vdc, VGS = 5.0 V, IL = 8.0 A)
Repetitive Pulse Inductive Load Switching Energy
(VDD = 20 Vdc, VGS = 5.0 V, IL = 8.0 A, TJ = 25°C)
Repetitive Pulse Inductive Load Switching Energy
(VDD = 20 Vdc, VGS = 5.0 V, IL = 6.8 A, TJ = 105°C)
Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms, TJ = 25°C)
RqJA
RqJA
RqJT
70
55
2.1
EAS
185
EAR
128
EAR
92
mJ
VLD
63
V
Operating Junction Temperature
TJ
−40 to 150
°C
Storage Temperature
Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto minimum pad FR4 PCB (1 oz Cu, 0.06” thick).
2. Surface−mounted onto 2″ square FR4 PCB, (1″ square, 1 oz Cu, 0.06” thick).
3. Surface−mounted onto minimum pad FR4 PCB (2 oz Cu, 0.06” thick).
+
ID
DRAIN
IG
+
VDS
GATE
SOURCE
VGS
IS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8408
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Test Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
42
40
43
46
45
47
51
51
51
−
−
0.6
2.5
5.0
10
−
25
50
mA
mA
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Clamped Breakdown Voltage (Note 4)
(VGS = 0 V, ID = 10 mA, TJ = 25°C)
(VGS = 0 V, ID = 10 mA, TJ = 150°C) (Note 6)
(VGS = 0 V, ID = 10 mA, TJ = −40°C) (Note 6)
Zero Gate Voltage Drain Current
(VGS = 0 V, VDS = 32 V, TJ = 25°C)
(VGS = 0 V, VDS = 32 V, TJ = 150°C) (Note 6)
V
mA
IDSS
INPUT CHARACTERISTICS (Note 4)
Gate Input Current − Normal Operation
(VGS = 5.0 V)
IGSSF
Gate Input Current − Protection Latched
(VGS = 5.0 V) (Note 6)
IGSSL
−
440
−
Gate Threshold Voltage
(VGS = VDS, ID = 1 mA)
VGS(th)
1.0
1.7
2.2
V
VGS(th)/TJ
−
5.0
−
−mV/°C
Gate Threshold Temperature Coefficient
Latched Reset Voltage
(Note 6)
VLR
0.8
1.4
1.9
V
Latched Reset Time
(VGS = 5.0 V to VGS < 1 V) (Note 6)
tLR
10
40
100
ms
−
25.5
−
kW
−
−
55
100
60
120
−
0.95
−
−15
−15
−5
−20
−
−
−
−
15
15
5
20
td(ON)
10
20
tr
20
40
td(OFF)
30
60
tf
20
40
Slew−Rate ON (90% VD to 10% VD)
−dVDS/dtON
0.5
Slew−Rate OFF (10% VD to 90% VD)
dVDS/dtOFF
0.5
Internal Gate Input Resistance
ON CHARACTERISTICS (Note 4)
RDS(on)
Static Drain−to−Source On−Resistance
(VGS = 5.0 V, ID = 3.0 A, TJ @ 25°C)
(VGS = 5.0 V, ID = 3.0 A, TJ @ 150°C) (Note 6)
Source−Drain Forward On Voltage
(VGS = 0 V, IS = 7.0 A)
VSD
mW
V
SWITCHING CHARACTERISTICS (Note 6)
Turn−OFF/ON Slew Rate Matching
VGS = 5.0 V, VDS = 13 V, RL = 4 W;
TJ = −40°C
TJ = 150°C
TJ = 25°C
−40°C < TJ < 150°C
Turn−ON Delay Time
TMatch
Rise Time (10% ID to 90% ID)
Turn−OFF Delay Time
VGS = 5 V, VDS = 13 V
RL = 4 W, −40°C < TJ < 150°C
Fall Time (90% ID to 10% ID)
%
ms
V/ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
ILIM
Current Limit
VGS = 5.0 V, VDS = 10 V, TJ @ 25°C
VGS = 5.0 V, VDS = 10 V, TJ = 150°C (Note 6)
VGS = 5.0 V, VDS = 10 V, TJ = −40°C (Note 6)
Temperature Limit (Turn−off)
VGS = 5.0 V
VGS = 10 V
A
10
10
9
13
−
−
16
18
16
TLIM(off)
150
150
175
165
200
185
°C
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
4000
−
−
V
Electro−Static Discharge Capability
Machine Model (MM)
ESD
400
−
−
V
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
6. Not subject to production testing.
http://onsemi.com
3
NCV8408
TEST CIRCUITS AND WAVEFORMS
4W
RL
ID
VIN
+
D
5V
VDD
G
−
13 V
0V
S
Figure 2. Resistive Load Switching Test Circuit
90%
VIN
10%
td(ON)
tr
td(OFF)
tf
90%
ID
10%
90%
VDS
10%
Figure 3. Resistive Load Switching Waveforms
http://onsemi.com
4
NCV8408
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
G DUT
S
tp
Figure 4. Inductive Load Switching Test Circuit
VIN
Tp
Tav
V(BR)DSS
VDS
VDS(on)
Ipk
ID
Figure 5. Inductive Load Switching Waveforms
http://onsemi.com
5
+
VDD
−
NCV8408
VIN
IG
ID
TJ
Figure 6. Short−Circuit Protection Behavior
Figure 7. Turn on into Short Circuit Device Response
http://onsemi.com
6
NCV8408
TYPICAL CHARACTERISTICS
1000
10
VDD = 20 V
VDD = 20 V
CURRENT (A)
ENERGY (mJ)
25°C
150°C
25°C
150°C
1
100
10
100
10
100
INDUCTANCE (mH)
INDUCTANCE (mH)
Figure 8. NCV8408 Maximum Switch Off
Energy vs Inductance
Figure 9. NCV8408 Maximum Switch Off
Current vs Inductance
600
18
ID = 3 A
16
500
150°C
14
ILIM (A)
12
300
200
150°C
125°C
100
25°C
−40°C
0
−40°C
25°C
8
4
2
0
2
4
6
8
10
12
5
8
7
Figure 11. Current Limit vs. Gate Voltage
7V
9V
200
8V
180
14
160
10
ID = 3 A
140
5V
10 V
4V
8
3V
6
120
100
80
150°C
125°C
60
4
40
VGS = 2.5 V
2
6
4
25°C
−40°C
20
0
2
10
Figure 10. VGS vs VDS
16
0
9
VGS (V)
6V
12
6
VGS (V)
18
ID (A)
125°C
10
6
RDS(on) (mW)
VDS (V)
400
0
10
8
2
4
6
8
10
VDS (V)
VGS (V)
Figure 12. Drain Current vs. Drain Voltage
Figure 13. RDS(on) vs. Gate Voltage
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7
12
NCV8408
TYPICAL CHARACTERISTICS
120
100
TIME (ms)
80
tr
60
td(off)
40
tf
20
td(on)
0
2
3
4
5
6
7
8
9
10
VGS (V)
Figure 14. Resistive Switching
180
TA = 25°C
160
140
qJA (°C/W)
120
100
qJA curve with PCB cu thk 1
80
60
qJA curve with PCB cu thk 2
40
20
0
0
100
200
300
400
500
600
COPPER HEAT SPREADER AREA (mm2)
700
Figure 15. RqJA vs. Copper Area
100
Duty Cycle = 50%
R(t) (°C/W)
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (s)
Figure 16. Transient Thermal Resistance
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8
10
100
1000
NCV8408
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NCV8408/D