MAXIM MAX15012AASA+

19-0530; Rev 0; 5/06
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
The MAX15012/MAX15013 high-frequency, 175V halfbridge, n-channel MOSFET drivers drive high- and lowside MOSFETs in high-voltage applications. These
drivers are independently controlled and their 35ns typical propagation delay, from input to output, are
matched to within 2ns (typ). The high-voltage operation
with very low and matched propagation delay between
drivers, and high source/sink current capabilities make
these devices suitable for the high-power, high-frequency telecom power converters. A reliable on-chip
bootstrap diode connected between V DD and BST
eliminates the need for an external discrete diode.
The MAX15012A/MAX15013A offer both noninverting
drivers (see the Selector Guide). The MAX15012B/
MAX15013B offer a noninverting high-side driver
and an inverting low-side driver. The MAX15012A/
MAX15012B feature CMOS (VDD / 2) logic inputs. The
MAX15013A/MAX15013B feature TTL logic inputs. The
drivers are available in the industry-standard 8-pin SO
footprint and pin configuration. All devices operate over
the -40°C to +125°C automotive temperature range.
Features
♦ HIP2100/HIP2101 Pin Compatible
(MAX15012A/MAX15013A)
♦
♦
♦
♦
Up to 175V Input Operation
8V to 12.6V VDD Input Voltage Range
2A Peak Source and Sink Current Drive Capability
35ns Typical Propagation Delay
♦ Guaranteed 8ns Propagation Delay Matching
Between Drivers
♦ Up to 500kHz Switching Frequency
♦ Available in CMOS (VDD / 2) or TTL Logic-Level
Inputs with Hysteresis
♦ Up to 14V Logic Inputs Independent of Input
Voltage
♦ Low 2.5pF Input Capacitance
♦ Low 70µA Supply Current
♦ Versions Available with Combination of
Noninverting and Inverting Drivers
(MAX15012B/MAX15013B)
♦ Available in Industry-Standard 8-Pin SO Package
Ordering Information
Applications
Telecom Half-Bridge Power Supplies
PINPACKAGE
PKG
CODE
PART
TEMP RANGE
Full-Bridge Converters
MAX15012AASA+
-40°C to +125°C
8 SO
S8-5
Active-Clamp Forward Converters
MAX15012BASA+
-40°C to +125°C
8 SO
S8-5
MAX15013AASA+
-40°C to +125°C
8 SO
S8-5
MAX15013BASA+
-40°C to +125°C
8 SO
S8-5
Two-Switch Forward Converters
Power-Supply Modules
Motor Control
+Denotes lead-free package.
Selector Guide
PART
HIGH-SIDE DRIVER
LOW-SIDE DRIVER
LOGIC LEVELS
PIN COMPATIBLE
MAX15012AASA+
Noninverting
MAX15012BASA+
Noninverting
Noninverting
CMOS (VDD / 2)
HIP 2100IB
Inverting
CMOS (VDD / 2)
MAX15013AASA+
—
Noninverting
Noninverting
TTL
HIP 2101IB
MAX15013BASA+
Noninverting
Inverting
TTL
—
Pin Configuration and Typical Operating Circuit appear at
the end of data sheet.
________________________________________________________________ Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
1
MAX15012/MAX15013
General Description
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND, unless otherwise noted.)
VDD, IN_H, IN_L......................................................-0.3V to +14V
DL ...............................................................-0.3V to (VDD + 0.3V)
HS............................................................................-5V to +180V
DH to HS.....................................................-0.3V to (VDD + 0.3V)
BST to HS ...............................................................-0.3V to +14V
dV/dt at HS ........................................................................50V/ns
Continuous Power Dissipation (TA = +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VDD = VBST = +8V to +12.6V, VHS = GND = 0V, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at VDD =
VBST = +12V and TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
12.6
V
140
µA
3
mA
40
µA
3
mA
V
POWER SUPPLIES
Operating Supply Voltage
VDD
(Notes 2 and 3)
VDD Quiescent Supply Current
(No Switching)
IDD
IN_H = IN_L = GND (for A version),
IN_H = GND, IN_L = VDD (for B version)
VDD Operating Supply Current
IDDO
fSW = 500kHz, VDD = +12V
BST Quiescent Supply Current
IBST
IN_H = IN_L = GND (for A version),
IN_H = GND, IN_L = VDD (for B version)
BST Operating Supply Current
IBSTO
8.0
70
15
fSW = 500kHz, VDD = VBST = +12V
UVLO (VDD to GND)
UVLOVDD
VDD rising
6.5
7.3
8.0
UVLO (BST to HS)
UVLOBST
BST rising
6.0
6.9
7.8
UVLO Hysteresis
V
0.5
V
0.55 x
VDD
V
LOGIC INPUT
Input-Logic High
VIH_
MAX15012_, CMOS (VDD / 2) version
MAX15013_, TTL version
Input-Logic Low
Logic-Input Hysteresis
2
VIL_
VHYS
0.67 x
VDD
2
1.65
0.4 x
VDD
0.33 x
VDD
MAX15013_, TTL version
1.4
0.8
MAX15012_, CMOS (VDD / 2) version
1.6
MAX15013_, TTL version
0.25
MAX15012_, CMOS (VDD / 2) version
_______________________________________________________________________________________
V
V
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
(VDD = VBST = +8V to +12.6V, VHS = GND = 0V, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at VDD =
VBST = +12V and TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
-1
+0.001
+1
µA
VIN_L = VDD for MAX15012B/MAX15013B
Logic-Input Current
I_IN
VIN_H = 0V
VIN_L = 0V for MAX15012A/MAX15013A
IN_H to GND
Input Resistance
RIN
IN_L to VDD for MAX15012B/MAX15013B
1
MΩ
2.5
pF
IN_L to GND for MAX15012A/MAX15013A
Input Capacitance
CIN
HIGH-SIDE GATE DRIVER
HS Maximum Voltage
VHS_MAX
VDD ≤ 10.5V (Note 3)
175
V
BST Maximum Voltage
VBST_MAX
VDD ≤ 10.5V (Note 3)
189
V
Driver Output Resistance
(Sourcing)
RON_HP
VDD = 12V, IDH = 100mA
(sourcing)
Driver Output Resistance
(Sinking)
RON_HN
VDD = 12V, IDH = 100mA
(sinking)
TA = +25°C
2.5
3.3
TA = +125°C
3.5
4.6
TA = +25°C
2.1
2.8
TA = +125°C
3.2
4.2
DH Reverse Current (Latchup
Protection)
(Note 4)
Power-Off Pulldown Clamp
Voltage
VBST = 0V or floating, IDH = 1mA (sinking)
Peak Output Current (Sourcing)
Peak Output Current (Sinking)
IDH_PEAK
400
Ω
Ω
mA
0.94
1.16
V
CL = 10nF, VDH = 0V
2
A
CL = 10nF, VDH = 12V
2
A
LOW-SIDE GATE DRIVER
Driver Output Resistance
(Sourcing)
RON_LP
VDD = 12V, IDL = 100mA
(sourcing)
TA = +25°C
2.5
3.3
TA = +125°C
3.5
4.6
Driver Output Resistance
(Sinking)
RON_LN
VDD = 12V, IDL = 100mA
(sinking)
TA = +25°C
2.1
2.8
TA = +125°C
3.2
4.2
Reverse Current at DL (Latchup
Protection)
(Note 4)
Power-Off Pulldown Clamp
Voltage
VDD = 0V or floating, IDL = 1mA (sinking)
400
Ω
Ω
mA
0.95
1.16
V
Peak Output Current (Sourcing)
IPK_LP
CL = 10nF, VDL = 0V
2
A
Peak Output Current (Sinking)
IPK_LN
CL = 10nF, VDL = 12V
2
A
INTERNAL BOOTSTRAP DIODE
Forward Voltage Drop
VF
IBST = 100mA
0.91
Turn-On and Turn-Off Time
tR
IBST = 100mA
40
1.11
V
ns
_______________________________________________________________________________________
3
MAX15012/MAX15013
ELECTRICAL CHARACTERISTICS (continued)
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(VDD = VBST = +8V to +12.6V, VHS = GND = 0V, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at VDD =
VBST = +12V and TA = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (VDD = VBST = +12V)
Rise Time
Fall Time
tR
tF
CL = 1000pF
7
CL = 5000pF
33
CL = 10,000pF
65
CL = 1000pF
7
CL = 5000pF
33
CL = 10,000pF
ns
65
CMOS
30
55
TTL
35
63
CMOS
30
55
TTL
35
63
2
8
Turn-On Propagation Delay Time
tD_ON
Figure 1, CL = 1000pF
(Note 4)
Turn-Off Propagation Delay Time
tD_OFF
Figure 1, CL = 1000pF
(Note 4)
Delay Matching Between DriverLow and Driver-High
tMATCH
CL = 1000pF, Figure 1 (Note 4)
Internal Nonoverlap
ns
1
ns
ns
ns
ns
Note 1: All devices are 100% tested at TA = +125°C. Limits over temperature are guaranteed by design.
Note 2: Ensure that the VDD-to-GND or BST-to-HS transient voltage does not exceed 13.2V.
Note 3: Maximum operating supply voltage (VDD) reduces linearly from 12.6V to 10.5V with its maximum voltage (VHS_MAX) increasing
from 125V to 175V. See the Typical Operating Characteristics and Applications Information sections.
Note 4: Guaranteed by design, not production tested.
4
_______________________________________________________________________________________
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
UNDERVOLTAGE LOCKOUT
(VDD AND VBST RISING) vs. TEMPERATURE
UVLOVDD
0.9
0.8
7.1
7.0
UVLOBST
6.8
0.7
VDD
2V/div
0.5
UVLOBST
HYSTERESIS
0.4
0.3
0.2
6.6
0.1
0V
IDD
50µA/div
0µA
0
-40 -25 -10 5 20 35 50 65 80 95 110 125
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
TEMPERATURE (°C)
INTERNAL BST DIODE
(I-V) CHARACTERISTICS
200
MAX15012/13 toc04
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
180
TA = +125°C
160
TA = +25°C
140
IDIODE (mA)
TA = 0°C
120
TA = -40°C
100
80
60
40
20
0
0.5
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VDD (V)
18
1.0
1.1
IBST (µA)
TA = +25°C
VBST = VDD + 1V,
NO SWITCHING
15
TA = +125°C
80
0.9
21
MAX15012/13 toc06
VDD = VBST
VHS = GND
IN_H = GND
IN_L = VDD
100
0.8
BST QUIESCENT CURRENT
vs. BST VOLTAGE
160
120
0.7
VDD - VBST (V)
VDD QUIESCENT CURRENT
vs. VDD (NO SWITCHING)
140
0.6
MAX15012/13 toc07
IDDO + IBSTO (mA)
IDDO + IBSTO vs. VDD
(fSW = 250kHz)
4ms/div
MAX15012/13 toc05
6.5
IN_H = GND
IN_L = VDD
UVLOVDD
HYSTERESIS
0.6
6.7
IDD (µA)
UVLO (V)
7.2
6.9
MAX15012/13 toc02
7.3
UVLO HYSTERESIS (V)
7.4
IDD vs. VDD
MAX15012/13 toc03
1.0
MAX15012/13 toc01
7.5
VDD AND BST UNDERVOLTAGE LOCKOUT
HYSTERESIS vs. TEMPERATURE
12
TA = +125°C
9
60
6
40
3
20
TA = -40°C
TA = -40°C, TA = 0°C, TA = +25°C
0
0
0
2
4
6
VDD (V)
8
10
12
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VBST (V)
_______________________________________________________________________________________
5
MAX15012/MAX15013
Typical Operating Characteristics
(Typical values are at VDD = VBST = +12V and TA = +25°C, unless otherwise specified.)
Typical Operating Characteristics (continued)
(Typical values are at VDD = VBST = +12V and TA = +25°C, unless otherwise specified.)
IDDO + IBSTO (mA)
8
7
6
5
4
3
2
1
0
0.34
0.32
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
MAX15012/13 toc09
CL = 0
SINKING 100mA
-40 -25 -10 5 20 35 50 65 80 95 110 125
0 100 200 300 400 500 600 700 800 900 1000
FREQUENCY (kHz)
TEMPERATURE (°C)
PEAK DH AND DL
SOURCE/SINK CURRENT
DH OR DL RISE TIME
vs. TEMPERATURE (CL = 10nF)
MAX15012/13 toc10
120
CL = 100nF
108
96
DH OR DL
5V/div
VDD = VBST = 8V
MAX15012/13 toc11
9
MAX15012/13 toc08
10
DH OR DL OUTPUT LOW VOLTAGE
vs. TEMPERATURE
OUTPUT LOW VOLTAGE (V)
VDD AND BST OPERATING SUPPLY
CURRENT vs. FREQUENCY
tR (ns)
84
SINK AND SOURCE
CURRENT
2A/div
72
60
VDD = VBST = 12V
48
36
24
12
0
-40 -25 -10 5 20 35 50 65 80 95 110 125
1µs/div
TEMPERATURE (°C)
100
90
VDD = VBST = 8V
80
70
60
50
VDD = VBST = 12V
40
30
55
50
45
DH
40
35
30
25
DL
20
15
20
10
10
5
0
6
60
MAX15012/13 toc13
110
PROPAGATION DELAY (ns)
120
DH OR DL RISE PROPAGATION DELAY
vs. TEMPERATURE
MAX15012/13 toc12
DH OR DL FALL TIME
vs. TEMPERATURE (CLOAD = 10nF)
tF (ns)
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
0
-40 -25 -10 5 20 35 50 65 80 95 110 125
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
TEMPERATURE (°C)
_______________________________________________________________________________________
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
DH OR DL FALL PROPAGATION DELAY
vs. TEMPERATURE
175
40
VHS_MAX (V)
PROPAGATION DELAY (ns)
DH
45
35
30
MAX15012/13 toc15
55
50
VHS_MAX vs. VDD_MAX
MAX15012/13 toc14
60
DL
25
125
20
15
10
5
0
0
8
-40 -25 -10 5 20 35 50 65 80 95 110 125
10.5
12.6
VDD_MAX (V)
TEMPERATURE (°C)
DELAY MATCHING (DH/DL FALLING)
DELAY MATCHING (DH/DL RISING)
MAX15012/13 toc17
MAX15012/13 toc16
CL = 0
CL = 0
INPUT
5V/div
INPUT
5V/div
DH/DL
5V/div
DH/DL
5V/div
10ns/div
10ns/div
DH/DL RESPONSE TO VDD GLITCH
MAX15012/13 toc18
DH
10V/div
DL
10V/div
VDD
10V/div
INPUT
5V/div
40µs/div
_______________________________________________________________________________________
7
MAX15012/MAX15013
Typical Operating Characteristics (continued)
(Typical values are at VDD = VBST = +12V and TA = +25°C, unless otherwise specified.)
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
MAX15012/MAX15013
Pin Description
PIN
NAME
1
VDD
Power Input. Bypass VDD to GND with a parallel combination of 0.1µF and 1µF ceramic capacitors.
2
BST
Boost Flying Capacitor Connection. Connect a 0.1µF ceramic capacitor between BST and HS for the
high-side MOSFET driver supply.
3
DH
High-Side-Gate Driver Output. Driver output for the high-side MOSFET gate.
4
HS
Source Connection for High-Side MOSFET. Also serves as a return terminal for the high-side driver.
5
IN_H
High-Side Noninverting Logic Input
6
IN_L
Low-Side Noninverting Logic Input (MAX15012A/MAX15013A). Low-side inverting logic input
(MAX15012B/MAX15013B).
7
GND
Ground. Use GND as a return path to the DL driver output and IN_H/IN_L inputs.
8
DL
IN_L
(MAX15012A/
MAX15013A)
FUNCTION
Low-Side-Gate Driver Output. Drives low-side MOSFET gate.
VIH
VIL
90%
DL
10%
tD_OFF1
tD_ON1
tF
IN_L
(MAX15012B/
MAX15013B)
tR
VIH
VIL
tD_OFF2
tD_ON2
VIH
IN_H
VIL
90%
DH
10%
tD_OFF3
tD_ON3
tF
tMATCH = (tD_ON3 - tD_ON1) or (tD_OFF3 - tD_OFF1) FOR "A" VERSION
tMATCH = (tD_ON3 - tD_ON2) or (tD_OFF3 - tD_OFF2) FOR "B" VERSION
Figure 1. Timing Characteristics for Noninverting and Inverting Logic Inputs
8
_______________________________________________________________________________________
tR
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
The MAX15012/MAX15013 are 175V/2A high-speed,
half-bridge MOSFET drivers that operate from a supply
voltage of +8V to +12.6V. The drivers are intended to
drive a high-side switch without any isolation device
like an optocoupler or drive transformer. The high-side
driver is controlled by a TTL/CMOS logic signal referenced to ground. The 2A source and sink drive capability is achieved by using low R DS_ON , p- and
n-channel driver output stages. The BiCMOS process
allows extremely fast rise/fall times and low propagation delays. The typical propagation delay from the
logic-input signal to the driver output is 35ns with a
matched propagation delay of 2ns typical. Matching
these propagation delays is as important as the
absolute value of the delay itself. The high 175V input
voltage range allows plenty of margin above the 100V
transient specification per telecom standards.
The maximum operating supply voltage (VDD) must be
reduced linearly from 12.6V to 10.5V when the maximum voltage (VHS_MAX) increases from 125V to 175V.
See the Typical Operating Characteristics.
Undervoltage Lockout
Both the high- and low-side drivers feature undervoltage lockout (UVLO). The low-side driver’s UVLOLOW
threshold is referenced to GND and pulls both driver
outputs low when VDD falls below 6.8V. The high-side
driver has its own UVLO threshold (UVLOHIGH), referenced to HS, and pulls DH low when BST falls below
6.4V with respect to HS.
During turn-on, once VDD rises above its UVLO threshold, DL starts switching and follows the IN_L logic input.
At this time, the bootstrap capacitor is not charged and
the BST-to-HS voltage is below UVLOBST. For synchronous buck and half-bridge converter topologies, the
bootstrap capacitor can charge up in one cycle and
normal operation begins in a few microseconds after
the BST-to-HS voltage exceeds UVLOBST. In the twoswitch forward topology, the BST capacitor takes some
time (a few hundred microseconds) to charge and
increase its voltage above UVLOBST.
The typical hysteresis for both UVLO thresholds is 0.5V.
The bootstrap capacitor value should be selected carefully to avoid unintentional oscillations during turn-on
and turn-off at the DH output. Choose the capacitor
value about 20 times higher than the total gate capacitance of the MOSFET. Use a low-ESR-type X7R dielectric ceramic capacitor at BST (typically a 0.1µF ceramic
capacitor is adequate) and a parallel combination of
1µF and 0.1µF ceramic capacitors from VDD to GND.
The high-side MOSFET’s continuous on-time is limited
due to the charge loss from the high-side driver’s quiescent current. The maximum on-time is dependent on
the size of CBST, IBST (40µA max), and UVLOBST.
Output Driver
The MAX15012/MAX15013 have low 2.5Ω RDS_ON pchannel and n-channel devices (totem pole) in the output stage. This allows for a fast turn-on and turn-off of the
high gate-charge switching MOSFETs. The peak source
and sink current is typically 2A. Propagation delays from
the logic inputs to the driver outputs are matched to
within 8ns. The internal p- and n-channel MOSFETs have
a 1ns break-before-make logic to avoid any cross conduction between them. This internal break-before-make
logic eliminates shoot-through currents reducing the
operating supply current as well as the spikes at VDD.
The DL voltage is approximately equal to VDD, the DHto-HS voltage is approximately equal to VDD minus a
diode drop, when they are in a high state and to zero
when in a low state. The driver RDS_ON is lower at higher
VDD. Lower RDS_ON means higher source and sink currents and faster switching speeds.
Internal Bootstrap Diode
An internal diode connects from VDD to BST and is used
in conjunction with a bootstrap capacitor externally connected between BST and HS. The diode charges the
capacitor from VDD when the DL low-side switch is on
and isolates VDD when HS is pulled high as the highside driver turns on (see the Typical Operating Circuit).
The internal bootstrap diode has a typical forward voltage drop of 0.9V and has a 10ns typical turn-off/turn-on
time. For lower voltage drops from VDD to BST, connect
an external Schottky diode between VDD and BST.
Driver Logic Inputs (IN_H, IN_L)
The MAX15012A/B are CMOS (VDD / 2) logic-input drivers while the MAX15013A/B have TTL-compatible logic
inputs. The logic-input signals are independent of VDD.
For example, the IC can be powered by a 10V supply
while the logic inputs are provided from a 12V CMOS
logic. Also, the logic inputs are protected against voltage spikes up to 14V, regardless of the VDD voltage.
The TTL and CMOS logic inputs have 250mV and 1.6V
hysteresis, respectively, to avoid double pulsing during
transition. The logic inputs are high-impedance pins and
should not be left floating. The low 2.5pF input capacitance reduces loading and increases switching speed.
The noninverting inputs are pulled down to GND and the
inverting inputs are pulled up to VDD internally using a
1MΩ resistor. The PWM output from the controller must
assume a proper state while powering up the device.
With the logic inputs floating, the DH and DL outputs pull
low as VDD rises up above the UVLO threshold.
_______________________________________________________________________________________
9
MAX15012/MAX15013
Detailed Description
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Applications Information
Supply Bypassing and Grounding
Pay extra attention to bypassing and grounding the
MAX15012/MAX15013. Peak supply and output currents may exceed 4A when both drivers are driving
large external capacitive loads in-phase. Supply drops
and ground shifts create forms of negative feedback for
inverters and may degrade the delay and transition
times. Ground shifts due to insufficient device grounding may also disturb other circuits sharing the same AC
ground return path. Any series inductance in the VDD,
DH, DL, and/or GND paths can cause oscillations due
to the very high di/dt when switching the MAX15012/
MAX15013 with any capacitive load. Place one or more
0.1µF ceramic capacitors in parallel as close to the
device as possible to bypass V DD to GND. Use a
ground plane to minimize ground return resistance and
series inductance. Place the external MOSFET as close
as possible to the MAX15012/MAX15013 to further minimize board inductance and AC path resistance.
Power Dissipation
Power dissipation in the MAX15012/MAX15013 is primarily due to power loss in the internal boost diode and
the nMOS and pMOS FETs.
For capacitive loads, the total power dissipation for the
device is:
PD = ⎛⎝ CL × VDD2 × fSW ⎞⎠ + (IDDO + IBSTO ) × VDD
where CL is the combined capacitive load at DH and
DL. VDD is the supply voltage and fSW is the switching
frequency of the converter. PD includes the power dissipated in the internal bootstrap diode. The internal
power dissipation reduces by PDIODE, if an external
bootstrap Schottky diode is used. The power dissipation in the internal boost diode (when driving a capacitive load) is the charge through the diode per switching
period multiplied by the maximum diode forward voltage drop (Vf = 1V).
PDIODE ≅ CDH × (VDD − 1) × fSW × Vf
10
The total power dissipation when using the internal
boost diode is P D and, when using an external
Schottky diode, is PD - PDIODE. The total power dissipated in the device must be kept below the maximum
of 0.471W for the 8-pin SO package at TA = +70°C
ambient.
Layout Information
The MAX15012/MAX15013 drivers source and sink
large currents to create very fast rise and fall edges at
the gates of the switching MOSFETs. The high di/dt can
cause unacceptable ringing if the trace lengths and
impedances are not well controlled. Use the following
PC board layout guidelines when designing with the
MAX15012/MAX15013:
• It is important that the VDD voltage (with respect to
ground) or BST voltage (with respect to HS) does
not exceed 13.2V. Voltage spikes higher than 13.2V
from VDD to GND or BST to HS can damage the
device. Place one or more low ESL 0.1µF decoupling ceramic capacitors from V DD to GND, and
from BST to HS as close as possible to the part. The
ceramic decoupling capacitors should be at least 20
times the gate capacitance being driven.
• There are two AC current loops formed between the
device and the gate of the MOSFET being driven.
The MOSFET looks like a large capacitance from gate
to source when the gate is being pulled low. The
active current loop is from the MOSFET driver output
(DL or DH) to the MOSFET gate, to the MOSFET
source, and to the return terminal of the MOSFET driver (either GND or HS). When the gate of the MOSFET
is being pulled high, the active current loop is from
the MOSFET driver output, (DL or DH), to the
MOSFET gate, to the MOSFET source, to the return
terminal of the drivers decoupling capacitor, to the
positive terminal of the decoupling capacitor, and to
the supply connection of the MOSFET driver. The
decoupling capacitor is either the flying capacitor
connected between BST and HS or the decoupling
capacitor for VDD. Care must be taken to minimize the
physical length and the impedance of these AC current paths.
______________________________________________________________________________________
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
VIN = 0 TO 175V*
VDD = 8V TO 12.6V
VDD
BST
N
DH
IN_H
MAX15012A
MAX15013A
PWM
CONTROLLER
HS
IN_L
N
DL
VOUT
GND
PIN COMPATIBLE WITH THE HIP2100/HIP2101
*DERATE VDD IF VIN INCREASES ABOVE 125V. SEE NOTE 3 IN THE ELECTRICAL CHARACTERISTICS.
Figure 2. MAX15012A/MAX15013A Half-Bridge Conversion
VDD = 8V TO 12.6V
VIN = 0 TO 175V*
CBST
VDD
BST
DH
PWM
IN_H MAX15012A
N
HS
VOUT
MAX15013A
IN_L
DL
N
GND
*DERATE VDD IF VIN INCREASES ABOVE 125V. SEE NOTE 3 IN THE ELECTRICAL CHARACTERISTICS.
Figure 3. Two-Switch Forward Conversion
______________________________________________________________________________________
11
MAX15012/MAX15013
Typical Application Circuits
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
MAX15012/MAX15013
Functional Diagrams
MAX15012A
MAX15012B
VDD/2 CMOS
VDD/2 CMOS
BST 2
5
IN_H
DH
3
BST 2
5
IN_H
DH
HS
4
VDD
1
6
IN_L
DL 8
6
IN_L
DL 8
GND 7
GND 7
SO
SO
MAX15013A
MAX15013B
TTL
TTL
BST 2
BST 2
5
IN_H
DH
3
5
IN_H
DH
IN_L
DL 8
6
IN_L
DL 8
GND 7
GND 7
SO
12
3
HS
4
VDD
1
HS
4
VDD
1
6
3
HS
4
VDD
1
SO
______________________________________________________________________________________
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
VIN = 0 TO 175V*
VDD = 8V TO 12.6V
VDD
CBST
BST
DH
PWM
N
MAX15012B
IN_H MAX15013B
VOUT
HS
IN_L
DL
N
GND
*DERATE VDD IF VIN INCREASES ABOVE 125V. SEE NOTE 3 IN THE ELECTRICAL CHARACTERISTICS.
Pin Configuration
Chip Information
TRANSISTOR COUNT: 790
PROCESS: HV BiCMOS
TOP VIEW
+
VDD
1
BST 2
DH
3
MAX15012A/B
MAX15013A/B
HS 4
8
DL
7
GND
6
IN_L
5
IN_H
SO
______________________________________________________________________________________
13
MAX15012/MAX15013
Typical Operating Circuit
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information
go to www.maxim-ic.com/packages.)
DIM
A
A1
B
C
e
E
H
L
N
E
H
INCHES
MILLIMETERS
MAX
MIN
0.069
0.053
0.010
0.004
0.014
0.019
0.007
0.010
0.050 BSC
0.150
0.157
0.228
0.244
0.016
0.050
MAX
MIN
1.35
1.75
0.10
0.25
0.35
0.49
0.25
0.19
1.27 BSC
3.80
4.00
5.80
6.20
0.40
SOICN .EPS
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
1.27
VARIATIONS:
1
INCHES
TOP VIEW
DIM
D
D
D
MIN
0.189
0.337
0.386
MAX
0.197
0.344
0.394
MILLIMETERS
MIN
4.80
8.55
9.80
MAX
5.00
8.75
10.00
N MS012
8
AA
14
AB
16
AC
D
C
A
B
e
0∞-8∞
A1
L
FRONT VIEW
SIDE VIEW
PROPRIETARY INFORMATION
TITLE:
PACKAGE OUTLINE, .150" SOIC
APPROVAL
DOCUMENT CONTROL NO.
21-0041
REV.
B
1
1
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
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© 2006 Maxim Integrated Products
Heaney
Printed USA
is a registered trademark of Maxim Integrated Products, Inc.