NCV8402, NCV8402A Self-Protected Low Side Driver with Temperature and Current Limit NCV8402/A is a three terminal protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. Features • • • • • • • • • Short−Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS (Clamped) RDS(ON) TYP ID MAX 42 V 165 mW @ 10 V 2.0 A* *Max current limit value is dependent on input condition. Drain Overvoltage Protection Gate Input ESD Protection Temperature Limit Current Limit Typical Applications Current Sense Source • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial MARKING DIAGRAM DRAIN 4 4 SOT−223 CASE 318E STYLE 3 AYW xxxxx G 1 G 2 3 1 2 3 SOURCE GATE DRAIN A = Assembly Location Y = Year W = Work Week xxxxx = V8402 or 8402A G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NCV8402STT1G SOT−223 (Pb−Free) 1000/Tape & Reel SOT−223 (Pb−Free) 4000/Tape & Reel NCV8402ASTT1G NCV8402STT3G NCV8402ASTT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev. 8 1 Publication Order Number: NCV8402/D NCV8402, NCV8402A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) Symbol Value Unit VDSS 42 V VDGR 42 V "14 V Gate−to−Source Voltage VGS Continuous Drain Current ID Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TT = 25°C (Note 1) Internally Limited PD 1.1 1.7 8.9 W RqJA RqJA RqJT 114 72 14 °C/W Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W) EAS 150 mJ Load Dump Voltage VLD 87 V Operating Junction Temperature TJ −40 to 150 °C Storage Temperature Tstg −55 to 150 °C Thermal Resistance Junction−to−Ambient Steady State (Note 1) Junction−to−Ambient Steady State (Note 2) Junction−to−Tab Steady State (Note 1) (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick). 2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick). + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention http://onsemi.com 2 NCV8402, NCV8402A ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit VGS = 0 V, ID = 10 mA, TJ = 25°C V(BR)DSS 42 46 55 V 40 45 55 0.25 4.0 1.1 20 50 100 1.8 2.2 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) VGS = 0 V, ID = 10 mA, TJ = 150°C (Note 5) VGS = 0 V, VDS = 32 V, TJ = 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 32 V, TJ = 150°C (Note 5) Gate Input Current VDS = 0 V, VGS = 5.0 V IGSSF mA mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS = VDS, ID = 150 mA Gate Threshold Temperature Coefficient VGS = 10 V, ID = 1.7 A, TJ = 25°C VGS(th) 1.3 VGS(th)/TJ 4.0 RDS(on) 165 200 VGS = 10 V, ID = 1.7 A, TJ = 150°C (Note 5) 305 400 Static Drain−to−Source On−Resistance VGS = 5.0 V, ID = 1.7 A, TJ = 25°C 195 230 VGS = 5.0 V, ID = 1.7 A, TJ = 150°C (Note 5) 360 460 VGS = 5.0 V, ID = 0.5 A, TJ = 25°C 190 230 VGS = 5.0 V, ID = 0.5 A, TJ = 150°C (Note 5) 350 460 Source−Drain Forward On Voltage VGS = 0 V, IS = 7.0 A VSD VGS = 10 V, VDD = 12 V ID = 2.5 A, RL = 4.7 W −dVDS/dtON 0.8 dVDS/dtOFF 0.3 V −mV/°C mW 1.0 V tON 25 ms tOFF 120 SWITCHING CHARACTERISTICS (Note 5) Turn−ON Time (10% VIN to 90% ID) Turn−OFF Time (90% VIN to 10% ID) Slew−Rate ON (70% VDS to 50% VDS) VGS = 10 V, VDD = 12 V, RL = 4.7 W Slew−Rate OFF (50% VDS to 70% VDS) V/ms SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4) Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25°C 3.7 4.3 5.0 VDS = 10 V, VGS = 5.0 V, TJ = 150°C (Note 5) 2.3 3.0 3.7 VDS = 10 V, VGS = 10 V, TJ = 25°C 4.2 4.8 5.4 VDS = 10 V, VGS = 10 V, TJ = 150°C (Note 5) 2.7 3.6 4.5 150 175 200 150 165 Temperature Limit (Turn−off) Thermal Hysteresis Temperature Limit (Turn−off) Thermal Hysteresis ILIM VGS = 5.0 V (Note 5) TLIM(off) VGS = 5.0 V DTLIM(on) VGS = 10 V (Note 5) TLIM(off) VGS = 10 V DTLIM(on) 15 VGS = 5 V ID = 1.0 A IGON 50 IGCL 0.05 IGTL 0.15 A °C 15 185 GATE INPUT CHARACTERISTICS (Note 5) Device ON Gate Input Current VGS = 10 V ID = 1.0 A Current Limit Gate Input Current VGS = 5 V, VDS = 10 V 400 VGS = 10 V, VDS = 10 V Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V mA mA 0.4 VGS = 10 V, VDS = 10 V mA 0.7 ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. http://onsemi.com 3 ESD 4000 400 V NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 10 Emax (mJ) IL(max) (A) 1000 TJstart = 25°C 100 TJstart = 25°C TJstart = 150°C TJstart = 150°C 1 10 10 10 100 L (mH) Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance 100 L (mH) Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance 1000 10 1 0.1 Emax (mJ) IL(max) (A) TJstart = 25°C TJstart = 150°C 1 100 TJstart = 150°C 10 10 TIME IN CLAMP (ms) TJstart = 25°C 1 Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp 8 8V TA = 25°C 7 5 VDS = 10 V 6V 100°C 4V ID (A) 3 3.5 V 4 3 2 3V 1 VGS = 2.5 V 0 −40°C 25°C 4 5V 5 ID (A) Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp 10 V 6 10 TIME IN CLAMP (ms) 150°C 2 1 0 1 2 3 4 0 5 VDS (V) 1 3 VGS (V) Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics http://onsemi.com 4 2 4 5 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 350 400 150°C, VGS = 5 V 150°C, ID = 0.5 A 300 RDS(on) (mW) 200 100°C, ID = 1.7 A 100°C, ID = 0.5 A 25°C, ID = 1.7 A 100 5 6 25°C, ID = 0.5 A −40°C, ID = 0.5 A −40°C, ID = 1.7 A 0 4 RDS(on) (mW) 150°C, ID = 1.7 A 300 150°C, VGS = 10 V 250 100°C, VGS = 5 V 200 25°C, VGS = 5 V 150 25°C, VGS = 10 V −40°C, VGS = 5 V 100 −40°C, VGS = 10 V 7 VGS (V) 8 9 50 0.2 10 Figure 8. RDS(on) vs. Gate−Source Voltage 0.6 0.8 1 1.2 ID (A) 1.4 1.6 1.8 2 8 ID = 1.7 A −40°C 7 VGS = 5 V 1.5 6 ILIM (A) RDS(on) (NORMIALZIZED) 0.4 Figure 9. RDS(on) vs. Drain Current 2 1.75 100°C, VGS = 10 V 1.25 1 25°C 5 100°C 4 VGS = 10 V 150°C 3 0.75 0.5 −40 −20 0 20 40 60 T (°C) 80 100 120 2 140 VDS = 10 V 5 6 7 8 9 10 VGS (V) Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source Voltage 10 8 VGS = 0 V 7 VGS = 10 V IDSS (mA) 6 ILIM (A) 150°C 1 5 4 40 60 80 0.01 −40°C 0.001 3 20 100°C 25°C VGS = 5 V VDS = 10 V 2 −40 −20 0 0.1 100 120 0.0001 10 140 15 20 25 30 35 TJ (°C) VDS (V) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain−to−Source Leakage Current http://onsemi.com 5 40 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 1.1 ID = 150 mA VGS = VDS 1.1 1 1 VSD (V) NORMALIZED VGS(th) (V) 1.2 0.9 −40°C 0.9 25°C 0.8 100°C 0.8 0.7 0.7 0.6 0.6 −40 0.5 150°C −20 0 20 40 60 80 100 120 140 VGS = 0 V 1 2 3 4 5 T (°C) Figure 14. Normalized Threshold Voltage vs. Temperature td(off) tf tr td(on) 3 4 5 6 7 VGS (V) 8 9 10 DRAIN−SOURCE VOLTAGE SLOPE (V/ms) TIME (ms) 100 50 9 10 ID = 2.5 A VDD = 12 V RG = 0 W 0.8 0.6 −dVDS/dt(on) 0.4 dVDS/dt(off) 0.2 0 3 Figure 16. Resistive Load Switching Time vs. Gate−Source Voltage 4 5 6 7 VGS (V) 8 9 10 Figure 17. Resistive Load Switching Drain−Source Voltage Slope vs. Gate−Source Voltage 100 75 td(off), (VGS = 10 V) tr, (VGS = 5 V) tf, (VGS = 10 V) 50 tf, (VGS = 5 V) td(off), (VGS = 5 V) 25 tr, (VGS = 10 V) 0 400 td(on), (VGS = 5 V) td(on), (VGS = 10 V) 800 1200 1600 2000 RG (W) DRAIN−SOURCE VOLTAGE SLOPE (V/ms) 1 ID = 2.5 A VDD = 12 V TIME (ms) 8 1 ID = 2.5 A VDD = 12 V RG = 0 W 150 0 7 Figure 15. Source−Drain Diode Forward Characteristics 200 0 6 IS (A) −dVDS/dt(on), VGS = 10 V 0.8 0.6 0.4 dVDS/dt(off), VGS = 5 V 0.2 0 dVDS/dt(off), VGS = 10 V −dVDS/dt(on), VGS = 5 V 0 Figure 18. Resistive Load Switching Time vs. Gate Resistance 500 1000 RG (W) ID = 2.5 A VDD = 12 V 1500 2000 Figure 19. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance http://onsemi.com 6 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 100 RqJA 788 mm2 C°/W 50% Duty Cycle 20% 10% 5% 10 2% 1 1% 0.1 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 PULSE WIDTH (sec) Figure 20. Transient Thermal Resistance http://onsemi.com 7 10 100 1000 NCV8402, NCV8402A TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT − S IDS Figure 21. Resistive Load Switching Test Circuit 90% VIN 10% td(ON) tr td(OFF) tf 90% 10% IDS Figure 22. Resistive Load Switching Waveforms http://onsemi.com 8 NCV8402, NCV8402A TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT − S tp IDS Figure 23. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 24. Inductive Load Switching Waveforms http://onsemi.com 9 NCV8402, NCV8402A PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE E 1 2 3 b e1 e C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE A1 q L STYLE 3: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV8402/D