ONSEMI NCV8402ASTT3G

NCV8402, NCV8402A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8402/A is a three terminal protected Low−Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain−to−Gate clamping for overvoltage
protection. This device offers protection and is suitable for harsh
automotive environments.
Features
•
•
•
•
•
•
•
•
•
Short−Circuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
(Clamped)
RDS(ON) TYP
ID MAX
42 V
165 mW @ 10 V
2.0 A*
*Max current limit value is dependent on input
condition.
Drain
Overvoltage
Protection
Gate
Input
ESD Protection
Temperature
Limit
Current
Limit
Typical Applications
Current
Sense
Source
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
MARKING
DIAGRAM
DRAIN
4
4
SOT−223
CASE 318E
STYLE 3
AYW
xxxxx G
1
G
2
3
1
2
3
SOURCE
GATE
DRAIN
A
= Assembly Location
Y
= Year
W
= Work Week
xxxxx = V8402 or 8402A
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NCV8402STT1G
SOT−223
(Pb−Free)
1000/Tape & Reel
SOT−223
(Pb−Free)
4000/Tape & Reel
NCV8402ASTT1G
NCV8402STT3G
NCV8402ASTT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 8
1
Publication Order Number:
NCV8402/D
NCV8402, NCV8402A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
(RG = 1.0 MW)
Symbol
Value
Unit
VDSS
42
V
VDGR
42
V
"14
V
Gate−to−Source Voltage
VGS
Continuous Drain Current
ID
Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TT = 25°C (Note 1)
Internally Limited
PD
1.1
1.7
8.9
W
RqJA
RqJA
RqJT
114
72
14
°C/W
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W)
EAS
150
mJ
Load Dump Voltage
VLD
87
V
Operating Junction Temperature
TJ
−40 to 150
°C
Storage Temperature
Tstg
−55 to 150
°C
Thermal Resistance
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 1)
(VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
+
ID
DRAIN
IG
+
VDS
GATE
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
VGS = 0 V, ID = 10 mA, TJ = 25°C
V(BR)DSS
42
46
55
V
40
45
55
0.25
4.0
1.1
20
50
100
1.8
2.2
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
VGS = 0 V, ID = 10 mA, TJ = 150°C
(Note 5)
VGS = 0 V, VDS = 32 V, TJ = 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 32 V, TJ = 150°C
(Note 5)
Gate Input Current
VDS = 0 V, VGS = 5.0 V
IGSSF
mA
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS = VDS, ID = 150 mA
Gate Threshold Temperature Coefficient
VGS = 10 V, ID = 1.7 A, TJ = 25°C
VGS(th)
1.3
VGS(th)/TJ
4.0
RDS(on)
165
200
VGS = 10 V, ID = 1.7 A, TJ = 150°C
(Note 5)
305
400
Static Drain−to−Source On−Resistance
VGS = 5.0 V, ID = 1.7 A, TJ = 25°C
195
230
VGS = 5.0 V, ID = 1.7 A, TJ = 150°C
(Note 5)
360
460
VGS = 5.0 V, ID = 0.5 A, TJ = 25°C
190
230
VGS = 5.0 V, ID = 0.5 A, TJ = 150°C
(Note 5)
350
460
Source−Drain Forward On Voltage
VGS = 0 V, IS = 7.0 A
VSD
VGS = 10 V, VDD = 12 V
ID = 2.5 A, RL = 4.7 W
−dVDS/dtON
0.8
dVDS/dtOFF
0.3
V
−mV/°C
mW
1.0
V
tON
25
ms
tOFF
120
SWITCHING CHARACTERISTICS (Note 5)
Turn−ON Time (10% VIN to 90% ID)
Turn−OFF Time (90% VIN to 10% ID)
Slew−Rate ON (70% VDS to 50% VDS)
VGS = 10 V, VDD = 12 V,
RL = 4.7 W
Slew−Rate OFF (50% VDS to 70% VDS)
V/ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Current Limit
VDS = 10 V, VGS = 5.0 V, TJ = 25°C
3.7
4.3
5.0
VDS = 10 V, VGS = 5.0 V, TJ = 150°C
(Note 5)
2.3
3.0
3.7
VDS = 10 V, VGS = 10 V, TJ = 25°C
4.2
4.8
5.4
VDS = 10 V, VGS = 10 V, TJ = 150°C
(Note 5)
2.7
3.6
4.5
150
175
200
150
165
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
ILIM
VGS = 5.0 V (Note 5)
TLIM(off)
VGS = 5.0 V
DTLIM(on)
VGS = 10 V (Note 5)
TLIM(off)
VGS = 10 V
DTLIM(on)
15
VGS = 5 V ID = 1.0 A
IGON
50
IGCL
0.05
IGTL
0.15
A
°C
15
185
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current
VGS = 10 V ID = 1.0 A
Current Limit Gate Input Current
VGS = 5 V, VDS = 10 V
400
VGS = 10 V, VDS = 10 V
Thermal Limit Fault Gate Input Current
VGS = 5 V, VDS = 10 V
mA
mA
0.4
VGS = 10 V, VDS = 10 V
mA
0.7
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
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3
ESD
4000
400
V
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
10
Emax (mJ)
IL(max) (A)
1000
TJstart = 25°C
100
TJstart = 25°C
TJstart = 150°C
TJstart = 150°C
1
10
10
10
100
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
100
L (mH)
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
1000
10
1
0.1
Emax (mJ)
IL(max) (A)
TJstart = 25°C
TJstart = 150°C
1
100
TJstart = 150°C
10
10
TIME IN CLAMP (ms)
TJstart = 25°C
1
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
8
8V
TA = 25°C
7
5
VDS = 10 V
6V
100°C
4V
ID (A)
3
3.5 V
4
3
2
3V
1
VGS = 2.5 V
0
−40°C
25°C
4
5V
5
ID (A)
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
10 V
6
10
TIME IN CLAMP (ms)
150°C
2
1
0
1
2
3
4
0
5
VDS (V)
1
3
VGS (V)
Figure 6. On−state Output Characteristics
Figure 7. Transfer Characteristics
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4
2
4
5
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
350
400
150°C, VGS = 5 V
150°C, ID = 0.5 A
300
RDS(on) (mW)
200
100°C, ID = 1.7 A
100°C, ID = 0.5 A
25°C, ID = 1.7 A
100
5
6
25°C, ID = 0.5 A
−40°C, ID = 0.5 A
−40°C, ID = 1.7 A
0
4
RDS(on) (mW)
150°C, ID = 1.7 A
300
150°C, VGS = 10 V
250
100°C, VGS = 5 V
200
25°C, VGS = 5 V
150
25°C, VGS = 10 V
−40°C, VGS = 5 V
100
−40°C, VGS = 10 V
7
VGS (V)
8
9
50
0.2
10
Figure 8. RDS(on) vs. Gate−Source Voltage
0.6
0.8
1
1.2
ID (A)
1.4
1.6
1.8
2
8
ID = 1.7 A
−40°C
7
VGS = 5 V
1.5
6
ILIM (A)
RDS(on) (NORMIALZIZED)
0.4
Figure 9. RDS(on) vs. Drain Current
2
1.75
100°C, VGS = 10 V
1.25
1
25°C
5
100°C
4
VGS = 10 V
150°C
3
0.75
0.5
−40 −20
0
20
40
60
T (°C)
80
100
120
2
140
VDS = 10 V
5
6
7
8
9
10
VGS (V)
Figure 10. Normalized RDS(on) vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
10
8
VGS = 0 V
7
VGS = 10 V
IDSS (mA)
6
ILIM (A)
150°C
1
5
4
40
60
80
0.01
−40°C
0.001
3
20
100°C
25°C
VGS = 5 V
VDS = 10 V
2
−40 −20 0
0.1
100
120
0.0001
10
140
15
20
25
30
35
TJ (°C)
VDS (V)
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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5
40
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
1.1
ID = 150 mA
VGS = VDS
1.1
1
1
VSD (V)
NORMALIZED VGS(th) (V)
1.2
0.9
−40°C
0.9
25°C
0.8
100°C
0.8
0.7
0.7
0.6
0.6
−40
0.5
150°C
−20
0
20
40
60
80
100
120
140
VGS = 0 V
1
2
3
4
5
T (°C)
Figure 14. Normalized Threshold Voltage vs.
Temperature
td(off)
tf
tr
td(on)
3
4
5
6
7
VGS (V)
8
9
10
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
TIME (ms)
100
50
9
10
ID = 2.5 A
VDD = 12 V
RG = 0 W
0.8
0.6
−dVDS/dt(on)
0.4
dVDS/dt(off)
0.2
0
3
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
4
5
6
7
VGS (V)
8
9
10
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
100
75
td(off), (VGS = 10 V)
tr, (VGS = 5 V)
tf, (VGS = 10 V)
50
tf, (VGS = 5 V)
td(off), (VGS = 5 V)
25
tr, (VGS = 10 V)
0
400
td(on), (VGS = 5 V)
td(on), (VGS = 10 V)
800
1200
1600
2000
RG (W)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
1
ID = 2.5 A
VDD = 12 V
TIME (ms)
8
1
ID = 2.5 A
VDD = 12 V
RG = 0 W
150
0
7
Figure 15. Source−Drain Diode Forward
Characteristics
200
0
6
IS (A)
−dVDS/dt(on), VGS = 10 V
0.8
0.6
0.4
dVDS/dt(off), VGS = 5 V
0.2
0
dVDS/dt(off), VGS = 10 V
−dVDS/dt(on), VGS = 5 V
0
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
500
1000
RG (W)
ID = 2.5 A
VDD = 12 V
1500
2000
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
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6
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
100
RqJA 788 mm2 C°/W
50% Duty Cycle
20%
10%
5%
10
2%
1
1%
0.1
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
PULSE WIDTH (sec)
Figure 20. Transient Thermal Resistance
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7
10
100
1000
NCV8402, NCV8402A
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
D
RG
VDD
G DUT
−
S
IDS
Figure 21. Resistive Load Switching Test Circuit
90%
VIN
10%
td(ON)
tr
td(OFF)
tf
90%
10%
IDS
Figure 22. Resistive Load Switching Waveforms
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8
NCV8402, NCV8402A
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
RG
+
VDD
G DUT
−
S
tp
IDS
Figure 23. Inductive Load Switching Test Circuit
5V
VIN
0V
Tav
Tp
V(BR)DSS
Ipk
VDD
VDS
VDS(on)
IDS
0
Figure 24. Inductive Load Switching Waveforms
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9
NCV8402, NCV8402A
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
E
1
2
3
b
e1
e
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
A1
q
L
STYLE 3:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NCV8402/D