NLSV4T3144 4-Bit Dual-Supply Non-Inverting Level Translator The NLSV4T3144 is a 4−bit configurable dual−supply bus buffer level translator. The input (IN_xn) and output (OUT_xn) ports are designed to track two different power supply rails, VCCA and VCCB respectively. Both supply rails are configurable from 1.6 V to 3.6 V allowing low−voltage translation from the input to the output port. www.onsemi.com 1 Features • • • • • • • Wide VCCA and VCCB Operating Range: 1.6 V to 3.6 V High−Speed w/ Balanced Propagation Delay Inputs and Outputs have OVT Protection to 5.5 V Outputs at 3−State until Active VCCA and VCCB are Reached Power−Off Protection Ultra−Small Packaging: 1.7 mm x 2.0 mm UQFN−12 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Mobile Phones, PDAs, Other Portable Devices • SPIt Bus Voltage Translation UQFN12 MU SUFFIX CASE 523AE MARKING DIAGRAM WG MG G WG = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Important Information PIN ASSIGNMENTS • ESD Protection for All Pins: OE HBM (Human Body Model) > 3000 V VCCA VCCB IN_A1 OUT_B1 IN_A2 OUT_B2 IN_A3 OUT_B3 OUT_A4 Figure 1. Logic Diagram June, 2015 − Rev. 1 2 10 OUT_B1 IN_A2 3 9 OUT_B2 IN_A3 4 8 OUT_B3 OUT_A4 5 7 IN_B4 IN_A1 6 ORDERING INFORMATION GND © Semiconductor Components Industries, LLC, 2015 VCCB 12 GND (Top View) IN_B4 OE 11 VCCA 1 Device Package Shipping† NLSV4T3144MUTAG UQFN−12 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 Publication Order Number: NLSV4T3144/D NLSV4T3144 1.8 V 3.3 V mC VCCA CE SCK SDO SDI AN0 NLSV4T3144 Temperature Sensor VCCB IN_A1 OUT_B1 IN_A2 OUT_B2 IN_A3 OUT_B3 CE SCK SDI IN_B4 OUT_A4 OE SDO GND Figure 2. Typical Application: SPI Bus Voltage Translator PIN NAMES TRUTH TABLE Pins Description Inputs VCCA ‘A’ DC Power Supply VCCB ‘B’ DC Power Supply GND Ground IN_A1, IN_A2, IN_A3 Input (Referenced to VCCA) IN_B4 Input (Referenced to VCCB) OUT_B1, OUT_B2, OUT_B3 Output (Referenced to VCCB) OUT_A4 Output (Referenced to VCCA) OE Output Enable (Referenced to VCCA) OE IN_A1, IN_A2, IN_A3, IN_B4 OUT_B1, OUT_B2, OUT_B3, OUT_A4 H X 3−State L L L H H www.onsemi.com 2 Outputs NLSV4T3144 MAXIMUM RATINGS Symbol VCCA, VCCB VI VC VO Parameter Value DC Supply Voltage, VCCA ≤ VCCB DC Input Voltage Control Input DC Output Voltage Condition Unit −0.5 to +5.5 V IN_xn −0.5 to +5.5 V OE −0.5 to +5.5 V (Power Down) OUT_xn −0.5 to +5.5 (Active Mode) OUT_xn −0.5 to +5.5 (Tri−State Mode) OUT_xn −0.5 to +5.5 VCCA = VCCB = 0 V IIK DC Input Diode Current −20 VI < GND mA IOK DC Output Diode Current −50 VO < GND mA IO DC Output Source/Sink Current ±50 mA ICCA, ICCB DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current per Ground Pin ±100 mA TSTG Storage Temperature −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. RECOMMENDED OPERATING CONDITIONS Symbol VCCA, VCCB Parameter Min Max Unit 1.6 3.6 V GND 3.6 V OE GND 3.6 V (Power Down) OUT_xn GND 3.6 V −40 +85 °C 0 10 ns Positive DC Supply Voltage, VCCA ≤ VCCB VI Bus Input Voltage VC Control Input VIO DC Output Voltage (Active Mode) OUT_xn (Tri−State Mode) OUT_xn TA Dt / DV Operating Temperature Range Input Transition Rise or Rate VI, from 30% to 70% of VCCA and VCCB; VCCA = VCCB = 3.3 V ±0.3 V www.onsemi.com 3 NLSV4T3144 DC ELECTRICAL CHARACTERISTICS −405C to + 855C Symbol Parameter VIH (IN_A1, IN_A2, IN_A3, OE) Input HIGH Voltage VIH (IN_B4) Input HIGH Voltage VIL (IN_B4) Input LOW Voltage Max Unit 2.7 – 3.6 ≥ VCCA 2.0 − V 1.6 − 0.65 * VCCA − 2.0 − 2.3 – 2.7 1.6 − 1.6 −2.3 0.65 * VCCB − ≥ VCCA − 0.8 Output HIGH Voltage 2.7 – 3.6 IOH = −100 mA; VI = VIH IOH = −6 mA; VI = VIH Output HIGH Voltage 0.7 − 0.35 * VCCA 2.7 – 3.6 − 0.8 2.3 – 2.7 − 0.7 1.6 −2.3 − 0.35 * VCCB ≤ VCCB 1.6 – 3.6 VCCB – 0.2 − 1.6 1.6 1.25 − 2.3 2.3 2.0 − 2.3 2.3 1.8 − 2.7 2.7 2.2 − 2.3 2.3 1.7 − 3.0 3.0 2.4 − 3.0 3.0 2.2 − IOH = −100 mA; VI = VIH 1.6 – 3.6 ≥ VCCA VCCA – 0.2 − 1.6 1.6 1.25 − 2.3 2.3 2.0 − 2.3 2.3 1.8 − 2.7 2.7 2.2 − 2.3 2.3 1.7 − 3.0 3.0 2.4 − IOH = −12 mA; VI = VIH IOH = −18 mA; VI = VIH IOH = −24 mA; VI = VIH 3.0 3.0 2.2 − IOL = 100 mA; VI = VIH ≤ VCCB 1.6 – 3.6 − 0.2 IOL = 6 mA; VI = VIH 1.6 1.6 − 0.3 IOL = 12 mA; VI = VIH 2.3 2.3 − 0.4 2.7 2.7 − 0.4 2.3 2.3 − 0.6 3.0 3.0 − 0.5 IOL = 18 mA; VI = VIH Output LOW Voltage − 1.6 −2.3 IOH = −24 mA; VI = VIH IOH = −6 mA; VI = VIH Output LOW Voltage 2.7 – 3.6 2.3 – 2.7 ≤ VCCB IOH = −18 mA; VI = VIH VOL (OUT_A4) Min ≤ VCCB IOH = −12 mA; VI = VIH VOL (OUT_B1, OUT_B2, OUT_B3) VCCB (V) 1.6 −2.3 Input LOW Voltage VOH (OUT_A4) VCCA (V) 2.3 – 2.7 VIL (IN_A1, IN_A2, IN_A3, OE) VOH (OUT_B1, OUT_B2, OUT_B3) Test Conditions IOL = 24 mA; VI = VIH 3.0 3.0 − 0.6 IOL = 100 mA; VI = VIH 1.6 – 3.6 ≥ VCCA − 0.2 IOL = 6 mA; VI = VIH 1.6 1.6 − 0.3 IOL = 12 mA; VI = VIH 2.3 2.3 − 0.4 2.7 2.7 − 0.4 2.3 2.3 − 0.6 3.0 3.0 − 0.5 3.0 3.0 − 0.6 IOL = 18 mA; VI = VIH IOL = 24 mA; VI = VIH www.onsemi.com 4 V V V V V V V NLSV4T3144 DC ELECTRICAL CHARACTERISTICS −405C to + 855C Symbol Parameter Test Conditions VCCA (V) VCCB (V) Min Max Unit IIN Input Leakage Current VIN_A1 = VIN_A2 = VIN_A3 = VCCA or GND; VIN_B4 = VCCB or GND ≤ VCCB 1.6 – 3.6 −1.0 +1.0 mA IOZ I/O Tri*State Output Leakage Current TA = 25_C, OE = VCCA ≤ VCCB 1.6 – 3.6 − 1.0 mA ICCA Quiescent Supply Current VIN_A1 = VIN_A2 = VIN_A3 = VCCA or GND; VIN_B4 = VCCB or GND OE = GND, IO = 0 ≤ VCCB 1.6 – 3.6 − 3.0 mA ICCB Quiescent Supply Current VIN_A1 = VIN_A2 = VIN_A3 = VCCA or GND; VIN_B4 = VCCB or GND OE = GND, IO = 0 ≤ VCCB 1.6 – 3.6 − 3.0 mA ICCA + ICCB Quiescent Supply Current VIN_A1 = VIN_A2 = VIN_A3 = VCCA or GND; VIN_B4 = VCCB or GND OE = GND, IO = 0 ≤ VCCB 1.6 – 3.6 − 6.0 mA NOTE: Connect ground before applying supply voltage VCCA or VCCB. This device is designed with the feature that the power−up sequence of VCCA and VCCB will not damage the IC. AC ELECTRICAL CHARACTERISTICS −405C to +855C VCCB (V) 3.6 Symbol tPLH, tPHL Parameter VCCA (V) Propagation Delay, tPHZ, tPLZ NOTE: Min Max 2.8 3.1 3.3 1.6 4.3 4.5 Output Enable, 3.6 8.7 OE to Output 2.8 10.3 10.7 1.6 17.2 18 3.6 7.8 2.8 8.2 8.4 1.6 9.5 9.8 3.6 0.25 2.8 0.25 0.25 1.6 0.25 0.25 Output Disable, Output to Output Skew Min Max Unit ns 3 OE to Output tOSHL, tOSLH Max 1.6 3.6 Input to Output tPZH, tPZL Min 2.8 6.1 ns 20 ns 10.5 ns 0.25 Propagation delays defined per Figure 3. CAPACITANCE Symbol Parameter CI Control Pin (OE) Input Capacitance CIN Test Conditions Typ (Note 1) Unit VCCA = VCCB = 3.3 V, VI = 0 V or VCCA/B 3.5 pF Input Pin Capacitance VCCA = VCCB = 3.3 V, VI = 0 V or VCCA/B 5.0 pF COUT Output Pin Capacitance VCCA = VCCB = 3.3 V, VI = 0 V or VCCA/B 5.0 pF CPD Power Dissipation Capacitance VCCA = VCC2 = 3.3 V, VI = 0 V or 3.3 V, f = 10 MHz 10 pF 1. Typical values are at TA = +25°C. www.onsemi.com 5 NLSV4T3144 VCC RL Pulse Generator DUT CL RL Figure 3. AC (Propagation Delay) Test Circuit Test Switch tPLH, tPHL OPEN tPLZ, tPZL VCCO x 2 at VCCO = 3.0 V − 3.6 V, 2.3 V − 2.7 V, 1.65 V − 1.95 V, 1.4 V − 1.6 V tPHZ, tPZH GND CL = 15 pF or equivalent (includes probe and jig capacitance) RL = 2 kW or equivalent ZOUT of pulse generator = 50 W VCCO is the supply voltage referenced to by the output being tested VIH Input Vm Vm 0V tPHL tPLH Output Vm VOH Vm VOL Waveform 1 − Propagation Delays tR = tF = 2.0 ns, 10% to 90%; f = 1 MHz; tW = 500 ns VIH OEn Vm Vm 0V tPZH Output tPHZ VOH VY Vm ≈0V tPZL tPLZ ≈ VCC Vm Output VX VOL Waveform 2 − Output Enable and Disable Times tR = tF = 2.0 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 4. AC (Propagation Delay) Test Circuit Waveforms Symbol Input Pin Output Pin Vm VCCX/2 VX VOL x 0.1 VY VOH x 0.9 www.onsemi.com 6 VCCO x 2 OPEN GND NLSV4T3144 PACKAGE DIMENSIONS UQFN12 1.7x2.0, 0.4P CASE 523AE ISSUE A D ÉÉ ÉÉ ÉÉ PIN 1 REFERENCE 2X 0.10 C 2X 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. 4. MOLD FLASH ALLOWED ON TERMINALS ALONG EDGE OF PACKAGE. FLASH 0.03 MAX ON BOTTOM SURFACE OF TERMINALS. 5. DETAIL A SHOWS OPTIONAL CONSTRUCTION FOR TERMINALS. A B L1 DETAIL A E NOTE 5 TOP VIEW DIM A A1 A3 b D E e K L L1 L2 DETAIL B A 0.05 C DETAIL B OPTIONAL CONSTRUCTION 12X 0.05 C A1 A3 8X C SIDE VIEW SEATING PLANE MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 1.70 BSC 2.00 BSC 0.40 BSC 0.20 ---0.45 0.55 0.00 0.03 0.15 REF K 5 MOUNTING FOOTPRINT SOLDERMASK DEFINED 7 DETAIL A e 2.00 1 12X 11 L 12X L2 BOTTOM VIEW 1 b 0.10 M C A B 0.05 M C 0.32 NOTE 3 0.40 PITCH 2.30 11X 0.22 12X 0.69 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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