NLSV4T3144 4-Bit Dual-Supply Non-Inverting Level Translator The NLSV4T3144 is a 4−bit configurable dual−supply bus buffer level translator. The input (IN_xn) and output (OUT_xn) ports are designed to track two different power supply rails, VCCA and VCCB respectively. Both supply rails are configurable from 1.6 V to 3.6 V allowing low−voltage translation from the input to the output port. http://onsemi.com 1 Features • • • • • • • UQFN12 MU SUFFIX CASE 523AE Wide VCCA and VCCB Operating Range: 1.6 V to 3.6 V High−Speed w/ Balanced Propagation Delay Inputs and Outputs have OVT Protection to 5.5 V Outputs at 3−State until Active VCCA and VCCB are Reached Power−Off Protection Ultra−Small Packaging: 1.7 mm x 2.0 mm UQFN−12 This is a Pb−Free Device Typical Applications MARKING DIAGRAM xxMG G xx M G • Mobile Phones, PDAs, Other Portable Devices • SPIt Bus Voltage Translation = Specific Device Code = Date Code = Pb−Free Package (*Note: Microdot may be in either location) Important Information • ESD Protection for All Pins: PIN ASSIGNMENTS HBM (Human Body Model) > 3000 V VCCA OE VCCB IN_A1 OUT_B1 IN_A2 OUT_B2 IN_A3 OUT_B3 OUT_A4 11 VCCB 2 10 OUT_B1 IN_A2 3 9 OUT_B2 IN_A3 4 8 OUT_B3 OUT_A4 5 7 IN_B4 VCCA 1 IN_A1 12 6 GND (Top View) IN_B4 OE ORDERING INFORMATION GND Figure 1. Logic Diagram Device Package Shipping† NLSV4T3144MUTAG UQFN−12 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 March, 2013 − Rev. 0 1 Publication Order Number: NLSV4T3144/D NLSV4T3144 1.8 V 3.3 V mC VCCA CE SCK SDO SDI AN0 NLSV4T3144 Temperature Sensor VCCB IN_A1 OUT_B1 IN_A2 OUT_B2 IN_A3 OUT_B3 CE SCK SDI IN_B4 OUT_A4 OE SDO GND Figure 2. Typical Application: SPI Bus Voltage Translator PIN NAMES TRUTH TABLE Pins Description Inputs VCCA ‘A’ DC Power Supply VCCB ‘B’ DC Power Supply GND Ground IN_A1, IN_A2, IN_A3 Input (Referenced to VCCA) IN_B4 Input (Referenced to VCCB) OUT_B1, OUT_B2, OUT_B3 Output (Referenced to VCCB) OUT_A4 Output (Referenced to VCCA) OE Output Enable (Referenced to VCCA) OE IN_A1, IN_A2, IN_A3, IN_B4 OUT_B1, OUT_B2, OUT_B3, OUT_A4 H X 3−State L L L H H http://onsemi.com 2 Outputs NLSV4T3144 MAXIMUM RATINGS Symbol VCCA, VCCB VI VC VO Parameter Value DC Supply Voltage, VCCA ≤ VCCB DC Input Voltage Control Input DC Output Voltage Condition Unit −0.5 to +5.5 V IN_xn −0.5 to +5.5 V OE −0.5 to +5.5 V (Power Down) OUT_xn −0.5 to +5.5 (Active Mode) OUT_xn −0.5 to +5.5 (Tri−State Mode) OUT_xn −0.5 to +5.5 VCCA = VCCB = 0 V IIK DC Input Diode Current −20 VI < GND mA IOK DC Output Diode Current −50 VO < GND mA IO DC Output Source/Sink Current ±50 mA ICCA, ICCB DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current per Ground Pin ±100 mA TSTG Storage Temperature −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. RECOMMENDED OPERATING CONDITIONS Symbol VCCA, VCCB Parameter Min Max Unit 1.6 3.6 V GND 3.6 V OE GND 3.6 V (Power Down) OUT_xn GND 3.6 V −40 +85 °C 0 10 ns Positive DC Supply Voltage, VCCA ≤ VCCB VI Bus Input Voltage VC Control Input VIO DC Output Voltage (Active Mode) OUT_xn (Tri−State Mode) OUT_xn TA Dt / DV Operating Temperature Range Input Transition Rise or Rate VI, from 30% to 70% of VCCA and VCCB; VCCA = VCCB = 3.3 V ±0.3 V http://onsemi.com 3 NLSV4T3144 DC ELECTRICAL CHARACTERISTICS −405C to + 855C Symbol Parameter VIH (IN_A1, IN_A2, IN_A3) Input HIGH Voltage VIH (IN_B4) Input HIGH Voltage VIL (IN_A1, IN_A2, IN_A3) Input LOW Voltage VIL (IN_B4) Input LOW Voltage VOH (OUT_B1, OUT_B2, OUT_B3) Test Conditions Max Unit 2.7 – 3.6 1.6 – 3.6 V 2.0 − 2.3 – 2.7 1.6 − 1.6 −2.3 0.65 * VCCA − 2.7 – 3.6 2.0 − 2.3 – 2.7 1.6 − 1.6 −2.3 0.65 * VCCB − 1.6 – 3.6 − 0.8 − 0.7 2.3 – 2.7 1.6 −2.3 Output HIGH Voltage 1.6 – 3.6 IOH = −100 mA; VI = VIH IOH = −6 mA; VI = VIH Output HIGH Voltage 0.8 2.3 – 2.7 − 0.7 1.6 −2.3 − 0.35 * VCCB 1.6 – 3.6 1.6 – 3.6 VCCA – 0.2 − 1.6 1.6 1.25 − 2.3 2.3 2.0 − 2.3 2.3 1.8 − 2.7 2.7 2.2 − 2.3 2.3 1.7 − 3.0 2.4 − 3.0 3.0 2.2 − IOH = −100 mA; VI = VIH 1.6 – 3.6 1.6 – 3.6 VCCA – 0.2 − 1.6 1.6 1.25 − 2.3 2.3 2.0 − 2.3 2.3 1.8 − 2.7 2.7 2.2 − 2.3 2.3 1.7 − IOH = −18 mA; VI = VIH 3.0 3.0 2.4 − IOH = −24 mA; VI = VIH 3.0 3.0 2.2 − IOL = 100 mA; VI = VIH 1.6 – 3.6 1.6 – 3.6 − 0.2 IOL = 6 mA; VI = VIH 1.6 1.6 − 0.3 IOL = 12 mA; VI = VIH 2.3 2.3 − 0.4 2.7 2.7 − 0.4 2.3 2.3 − 0.6 IOL = 18 mA; VI = VIH Output LOW Voltage 0.35 * VCCA − 3.0 IOH = −6 mA; VI = VIH Output LOW Voltage − 2.7 – 3.6 IOH = −24 mA; VI = VIH IOH = −12 mA; VI = VIH VOL (OUT_A4) Min 2.7 – 3.6 IOH = −18 mA; VI = VIH VOL (OUT_B1, OUT_B2, OUT_B3) VCCB (V) 1.6 – 3.6 IOH = −12 mA; VI = VIH VOH (OUT_A4) VCCA (V) 3.0 3.0 − 0.5 IOL = 24 mA; VI = VIH 3.0 3.0 − 0.6 IOL = 100 mA; VI = VIH 1.6 – 3.6 1.6 – 3.6 − 0.2 IOL = 6 mA; VI = VIH 1.6 1.6 − 0.3 IOL = 12 mA; VI = VIH 2.3 2.3 − 0.4 2.7 2.7 − 0.4 2.3 2.3 − 0.6 3.0 3.0 − 0.5 3.0 3.0 − 0.6 IOL = 18 mA; VI = VIH IOL = 24 mA; VI = VIH http://onsemi.com 4 V V V V V V V NLSV4T3144 DC ELECTRICAL CHARACTERISTICS −405C to + 855C Symbol Parameter Test Conditions VCCA (V) VCCB (V) Min Max Unit IIN Input Leakage Current VIN_A1 = VIN_A2 = VIN_A3 = VCCA or GND; VIN_B4 = VCCB or GND 1.6 – 3.6 1.6 – 3.6 −1.0 +1.0 mA IOZ I/O Tri*State Output Leakage Current TA = 25_C, OE = GND 1.6 – 3.6 1.6 – 3.6 − 1.0 mA ICCA Quiescent Supply Current VIN_A1 = VIN_A2 = VIN_A3 = VCCA or GND; VIN_B4 = VCCB or GND OE = VCCA, IO = 0 1.6 – 3.6 1.6 – 3.6 − 3.0 mA ICCB Quiescent Supply Current VIN_A1 = VIN_A2 = VIN_A3 = VCCA or GND; VIN_B4 = VCCB or GND OE = VCCA, IO = 0 1.6 – 3.6 1.6 – 3.6 − 3.0 mA ICCA + ICCB Quiescent Supply Current VIN_A1 = VIN_A2 = VIN_A3 = VCCA or GND; VIN_B4 = VCCB or GND OE = VCCA, IO = 0 1.6 – 3.6 1.6 – 3.6 − 6.0 mA NOTE: Connect ground before applying supply voltage VCCA or VCCB. This device is designed with the feature that the power−up sequence of VCCA and VCCB will not damage the IC. AC ELECTRICAL CHARACTERISTICS −405C to +855C VCCB (V) 3.6 Symbol tPLH, tPHL Parameter VCCA (V) Propagation Delay, tPHZ, tPLZ NOTE: Min 1.6 Max Min Max Unit ns 3 3.2 4.7 2.8 3.1 3.3 4.8 1.6 4.3 4.5 6.1 Output Enable, 3.6 8.7 8.9 11.3 OE to Output 2.8 10.3 10.7 12 1.6 17.2 18 20 3.6 7.8 8.3 9.3 2.8 8.2 8.4 10 1.6 9.5 9.8 10.5 3.6 0.25 0.25 0.25 2.8 0.25 0.25 0.25 1.6 0.25 0.25 0.25 Output Disable, OE to Output tOSHL, tOSLH 2.8 Max 3.6 Input to Output tPZH, tPZL Min Output to Output Skew ns ns ns Propagation delays defined per Figure 3. CAPACITANCE Typ (Note 1) Unit VCCA = VCCB = 3.3 V, VI = 0 V or VCCA/B 3.5 pF Input Pin Capacitance VCCA = VCCB = 3.3 V, VI = 0 V or VCCA/B 5.0 pF COUT Output Pin Capacitance VCCA = VCCB = 3.3 V, VI = 0 V or VCCA/B 5.0 pF CPD Power Dissipation Capacitance VCCA = VCC2 = 3.3 V, VI = 0 V or 3.3 V, f = 10 MHz 10 pF Symbol Parameter CI Control Pin (OE) Input Capacitance CIN Test Conditions 1. Typical values are at TA = +25°C. http://onsemi.com 5 NLSV4T3144 VCC Pulse Generator RL DUT CL RL Figure 3. AC (Propagation Delay) Test Circuit Test Switch tPLH, tPHL OPEN tPLZ, tPZL VCCA x 2 at VCCB = 3.0 V − 3.6 V, 2.3 V − 2.7 V, 1.65 V − 1.95 V, 1.4 V − 1.6 V tPHZ, tPZH GND CL = 15 pF or equivalent (includes probe and jig capacitance) RL = 2 kW or equivalent ZOUT of pulse generator = 50 W VIH Input Vm Vm tPHL tPLH Output Vm 0V VOH Vm VOL Waveform 1 − Propagation Delays tR = tF = 2.0 ns, 10% to 90%; f = 1 MHz; tW = 500 ns VIH OEn Vm Vm tPZH Output 0V tPHZ VOH VY Vm ≈0V tPZL tPLZ ≈ VCC Vm Output VX VOL Waveform 2 − Output Enable and Disable Times tR = tF = 2.0 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 4. AC (Propagation Delay) Test Circuit Waveforms Input Pin Output Pin Symbol Vm VCCX/2 VX VOL x 0.1 VY VOH x 0.9 http://onsemi.com 6 VCCO x 2 OPEN GND NLSV4T3144 PACKAGE DIMENSIONS UQFN12 1.7x2.0, 0.4P CASE 523AE ISSUE A D ÉÉ ÉÉ PIN 1 REFERENCE 2X 0.10 C 2X 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. 4. MOLD FLASH ALLOWED ON TERMINALS ALONG EDGE OF PACKAGE. FLASH 0.03 MAX ON BOTTOM SURFACE OF TERMINALS. 5. DETAIL A SHOWS OPTIONAL CONSTRUCTION FOR TERMINALS. A B L1 DETAIL A E NOTE 5 TOP VIEW DIM A A1 A3 b D E e K L L1 L2 DETAIL B A 0.05 C 12X 0.05 C A1 A3 8X C SIDE VIEW SEATING PLANE K 5 MOUNTING FOOTPRINT SOLDERMASK DEFINED 7 DETAIL A e 1 12X DETAIL B OPTIONAL CONSTRUCTION MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 1.70 BSC 2.00 BSC 0.40 BSC 0.20 ---0.45 0.55 0.00 0.03 0.15 REF 11 L 2.00 12X L2 BOTTOM VIEW 1 b 0.10 M C A B 0.05 M C 0.32 NOTE 3 2.30 0.40 PITCH 11X 0.22 12X 0.69 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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