2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features http://onsemi.com • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • This is a Pb−Free Device* 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 100 VOLTS, 150 WATTS MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous Peak IC 12 20 Adc Base Current IB 0.2 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 150 0.857 W W/°C Operating and Storage Temperature Range TJ, Tstg −65 to + 200 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.17 °C/W Collector−Emitter Voltage COLLECTOR CASE BASE 1 EMITTER 2 MARKING DIAGRAM THERMAL CHARACTERISTICS 2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 160 TO−204AA (TO−3) CASE 1−07 STYLE 1 2N6052 G A YY WW MEX 140 120 100 2N6052G AYYWW MEX 1 = = = = = = Device Code Pb−Free Package Location Code Year Work Week Country of Orgin 80 60 ORDERING INFORMATION 40 Device 20 0 2N6052G 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 Package Shipping TO−3 (Pb−Free) 100 Units/Tray 200 Preferred devices are recommended choices for future use and best overall value. Figure 1. Power Derating *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 5 1 Publication Order Number: 2N6052/D 2N6052 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max Unit (IC = 100 mAdc, IB = 0) VCEO(sus) 100 − Vdc (VCE = 50 Vdc, IB = 0) ICEO − 1.0 mAdc − − 0.5 5.0 − 2.0 750 100 18,000 − − − 2.0 3.0 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) Collector Cutoff Current Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEX mAdc IEBO mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 6.0 Adc, VCE = 3.0 Vdc) (IC = 12 Adc, VCE = 3.0 Vdc) Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 24 mAdc) (IC = 12 Adc, IB = 120 mAdc) hFE − VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 12 Adc, IB = 120 mAdc) VBE(sat) − 4.0 Vdc Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 3.0 Vdc) VBE(on) − 2.8 Vdc Magnitude of Common Emitter Small−Signal Short Circuit Forward Current Transfer Ratio (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) |hfe| 4.0 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob − 500 pF (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 300 − − DYNAMIC CHARACTERISTICS Small−Signal Current Gain 2. Indicates JEDEC Registered Data. 3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 10 VCC -30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA RC ts SCOPE TUT V2 approx +8.0 V 51 V1 approx -8.0 V D1 ≈ 5.0 k t, TIME (s) μ RB 0 ≈ 50 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 2.0 tf 1.0 tr 0.5 +4.0 V 25 ms 2N6052 2N6059 5.0 td @ VBE(off) = 0 for td and tr, D1 is disconnected and V2 = 0 0.2 0.1 0.2 For NPN test circuit reverse diode and voltage polarities. Figure 2. Switching Times Test Circuit 0.5 5.0 1.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Switching Times http://onsemi.com 2 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 10 20 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6052 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) RqJC(t) = r(t) RqJC RqJC = 1.17°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.03 0.01 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response ACTIVE−REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5, and 6 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 200_C; TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 50 0.1 ms 20 10 0.5 ms 5.0 1.0 ms 2.0 5.0 ms 1.0 TJ = 200°C 0.5 SECOND BREAKDOWN LIMITED 0.2 BONDING WIRE LIMITED 0.1 THERMAL LIMITATION @TC = 25°C (SINGLE PULSE) 0.05 10 20 30 d c 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 3000 2000 TC = 25°C VCE = 3.0 V IC = 5.0 A 1000 TJ = 25°C 300 C, CAPACITANCE (pF) hfe, SMALL-SIGNAL CURRENT GAIN Figure 5. 500 200 100 200 Cib Cob 100 70 50 30 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 50 0.1 500 1000 0.2 10 20 0.5 1.0 2.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 6. Small−Signal Current Gain http://onsemi.com 3 50 100 2N6052 20,000 VCE = 3.0 V hFE , DC CURRENT GAIN 10,000 TJ = 150°C 5000 3000 25°C 2000 1000 -55°C 500 300 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 20 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.0 TJ = 25°C 2.6 IC = 3.0 A 6.0 A 9.0 A 12 A 2.2 1.8 1.4 1.0 0.5 5.0 2.0 3.0 10 IB, BASE CURRENT (mA) 1.0 20 30 50 Figure 9. Collector Saturation Region 3.0 TJ = 25°C V, VOLTAGE (VOLTS) 2.5 2.0 1.5 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 4 10 20 2N6052 PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. A N C E D −T− K 2 PL 0.13 (0.005) U V SEATING PLANE T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L 2 H G B M T Y 1 −Q− 0.13 (0.005) INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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