2N5684 D

2N5684 (PNP), 2N5686 (NPN)
High-Current
Complementary Silicon
Power Transistors
These packages are designed for use in high-power amplifier and
switching circuit applications.
Features
http://onsemi.com
50 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80 VOLTS, 300 WATTS
•High Current Capability - IC Continuous = 50 Amperes
•DC Current Gain - hFE = 15-60 @ IC = 25 Adc
•Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
•Pb-Free Packages are Available*
MARKING
DIAGRAM
MAXIMUM RATINGS (Note 1)
Rating
Collector-Emitter Voltage
Symbol
Value
Unit
VCEO
80
Vdc
Collector-Base Voltage
VCB
80
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
IC
50
Adc
Collector Current - Continuous
Base Current
IB
15
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
300
1.715
mW
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg
-65 to +200
°C
2N568xG
AYYWW
MEX
TO-204 (TO-3)
CASE 197A
STYLE 1
2N568x
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
qJC
0.584
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
PD, POWER DISSIPATION (WATTS)
300
G
A
YY
WW
MEX
ORDERING INFORMATION
Device
2N5684G
250
2N5686
200
= Device Code
x = 4 or 6
= Pb-Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
2N5686G
150
Package
Shipping
TO-3
(Pb-Free)
100 Units/Tray
TO-3
100 Units/Tray
TO-3
(Pb-Free)
100 Units/Tray
100
50
0
0
20
40
60
80 100 120 140
TEMPERATURE (°C)
160
180
200
*For additional information on our Pb-Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 12
1
Publication Order Number:
2N5684/D
2N5684 (PNP), 2N5686 (NPN)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
80
-
Vdc
ICEO
-
1.0
mAdc
-
2.0
10
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 3)
(IC = 0.2 Adc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
Collector Cutoff Current
ICEX
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
mAdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
-
2.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
-
5.0
mAdc
15
5.0
60
-
-
1.0
5.0
ON CHARACTERISTICS
DC Current Gain (Note 3)
hFE
(IC = 25 Adc, VCE = 2.0 Vdc)
(IC = 50 Adc, VCE = 5.0 Vdc)
Collector-Emitter Saturation Voltage (Note 3)
-
VCE(sat)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 10 Adc)
Base-Emitter Saturation Voltage (Note 2)
Base-Emitter On Voltage (Note 2)
Vdc
(IC = 25 Adc, IB = 2.5 Adc)
VBE(sat)
-
2.0
Vdc
(IC = 25 Adc, VCE = 2.0 Vdc)
VBE(on)
-
2.0
Vdc
fT
2.0
-
MHz
pF
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N5684
2N5686
Cob
-
2000
1200
(IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
15
-
Small-Signal Current Gain
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
VCC
-30 V
RL
+2.0 V
TO SCOPE
tr ≤ 20 ns
0
RB
tr ≤
20ns
1.0
0.7
0.5
-12V
DUTY CYCLE ≈ 2.0%
VCC
TO SCOPE
tr ≤ 20 ns
0
RB
tr ≤ 20ns
10 to 100 μs
-30 V
RL
+10V
-12V
t, TIME (s)
μ
10 to 100 μs
VBB
tr
0.3
0.2
td
0.1
0.07
0.05
0.03
0.02
TJ = 25°C
IC/IB = 10
VCC = 30 V
0.01
0.5 0.7 1.0
+4.0 V
2N5684 (PNP)
2N5686 (NPN)
DUTY CYCLE ≈ 2.0%
FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn-On Time
Figure 2. Switching Time Test Circuit
http://onsemi.com
2
30
50
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
2N5684 (PNP), 2N5686 (NPN)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
P(pk)
θJC(t) = r(t) θJC
θJC = 0.584°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) θJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
20
50
100
200
500
1000 2000
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
100
20
10
5.0
2.0
1.0
0.5
100 μs
500 μs
50
dc
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C - V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1.0 ms
TJ = 200°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
CURVES APPLY BELOW
RATED VCEO
The data of Figure 5 is based on T J(pk) = 200_C; T C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 200_C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.2
0.1
1.0
2N5684, 2N5686
2.0 3.0
20 30
50 70 100
5.0 7.0 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active-Region Safe Operating Area
4.0
t, TIME (s)
μ
2.0
ts
5000
TJ = 25°C
IB1 = IB2
IC/IB = 10
VCE = 30 V
TJ = 25°C
3000
C, CAPACITANCE (pF)
2N5684 (PNP)
2N5686 (NPN)
3.0
1.0
0.8
0.6
0.4
tf
Cib
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
30
500
0.1
50
Figure 6. Turn-Off Time
Cob
Cib
1000
700
0.3
0.2
0.5 0.7 1.0
2000
2N5684 (PNP)
2N5686 (NPN)
0.2
Cob
0.5
1.0 2.0
5.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
http://onsemi.com
3
50
100
2N5684 (PNP), 2N5686 (NPN)
PNP
2N5684
NPN
2N5686
500
500
TJ = +150°C
VCE = 2.0 V
VCE = 10 V
+25°C
100
70
+25°C
100
70
-55°C
50
30
20
10
7.0
5.0
0.5 0.7 1.0
VCE = 2.0 V
VCE = 10 V
TJ = +150°C
300
200
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
300
200
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
30
50
-55°C
30
20
10
7.0
5.0
0.5 0.7 1.0
50
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (AMP)
30
50
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
2.0
2.0
TJ = 25°C
IC = 10 A
40 A
25 A
1.2
IC = 10 A
25 A
40 A
1.2
0.8
0.8
0.4
0.4
0
TJ = 25°C
1.6
1.6
0.1
0.2
0.5
1.0
2.0 3.0
IB, BASE CURRENT (AMP)
5.0
10
0
0.1
0.2 0.3
0.5
1.0
2.0 3.0
IB, BASE CURRENT (AMP)
5.0
10
20 30
50
Figure 9. Collector Saturation Region
2.5
2.0
TJ = 25°C
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0
1.5
1.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.5
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
0
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20 30
0
0.5 0.7
50
IC, COLLECTOR CURRENT (AMP)
1.0
2.0
3.0
5.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
http://onsemi.com
4
2N5684 (PNP), 2N5686 (NPN)
PACKAGE DIMENSIONS
TO-204 (TO-3)
CASE 197A-05
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
N
C
-TE
D
U
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
K
2 PL
0.30 (0.012)
V
SEATING
PLANE
T Q
M
M
Y
M
-Y-
L
2
H
G
B
1
MILLIMETERS
MIN MAX
38.86 REF
25.15 26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
19.31 21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
-Q0.25 (0.010)
INCHES
MIN
MAX
1.530 REF
0.990 1.050
0.250 0.335
0.057 0.063
0.060 0.070
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
0.760 0.830
0.151 0.165
1.187 BSC
0.131 0.188
M
T Y
M
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082-1312 USA
Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada
Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
http://onsemi.com
5
For additional information, please contact your
local Sales Representative.
2N5684/D