Product Overview

Product Overview
2N6052: 12 A, 100 V PNP Darlington Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications.
Features
• High DC Current Gain
hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector-Emitter Sustaining Voltage? @ 100 mA
VCEO(sus) = 80 Vdc (Min)?2N6058
100 Vdc (Min)?2N6052, 2N6059
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• This is a Pb-Free Device
Part Electrical Specifications
Product
Compliance
Status
Polarity
IC
Continuous
(A)
V(BR)CEO Min
(V)
VCE(sat) Max
(V)
hFE Min (k)
hFE Max (k)
fT Min (MHz) Package
Type
2N6052G
Pb-free
Active
PNP
12
100
2
0.75
18
4
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO-204-2