TIP100 D

TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,
TIP107 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
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Designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain −
= 2500 (Typ) @ IC
= 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105
= 80 Vdc (Min) − TIP101, TIP106
= 100 Vdc (Min) − TIP102, TIP107
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC
= 3.0 Adc
= 2.5 Vdc (Max) @ IC = 8.0 Adc
Monolithic Construction with Built−in Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
hFE
•
•
•
•
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 80 WATTS
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 1
1
2
3
STYLE 1:
PIN 1.
2.
3.
4.
TIP10x
x
A
Y
WW
G
TIP10xG
AYWW
BASE
COLLECTOR
EMITTER
COLLECTOR
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 14
1
Publication Order Number:
TIP100/D
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Symbol
TIP100,
TIP105
TIP101,
TIP106
TIP102,
TIP107
Unit
VCEO
60
80
100
Vdc
Collector − Base Voltage
VCB
60
80
100
Vdc
Emitter − Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
− Peak
IC
8.0
15
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
80
0.64
W
W/°C
Unclamped Inductive Load Energy (1)
E
30
mJ
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
TJ, Tstg
– 65 to + 150
°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
1.56
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
100
−
−
−
−
−
−
50
50
50
−
−
−
50
50
50
−
8.0
1000
200
20,000
−
−
−
2.0
2.5
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
VCEO(sus)
Vdc
ICEO
mAdc
ICBO
IEBO
mAdc
mAdc
ON CHARACTERISTICS (1)
hFE
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
−
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 6.0 mAdc)
(IC = 8.0 Adc, IB = 80 mAdc)
VCE(sat)
Vdc
Base−Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
2.8
Vdc
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
−
−
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
−
−
300
200
pF
DYNAMIC CHARACTERISTICS
TIP105, TIP106, TIP107
TIP100, TIP101, TIP102
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
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2
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
COLLECTOR
COLLECTOR
BASE
BASE
≈ 8.0 k
≈ 120
≈ 8.0 k
≈ 120
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ORDERING INFORMATION
Device
Package
Shipping
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TO−220
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
TIP100
TIP100G
TIP101
TIP101G
TIP102
TIP102G
TIP105
TIP105G
TIP106
TIP106G
TIP107
TIP107G
TC
4.0
80
3.0
60
2.0
40
1.0
20
PD, POWER DISSIPATION (WATTS)
TA
TC
TA
0
0
0
20
40
60
80
100
120
T, TEMPERATURE (°C)
Figure 2. Power Derating
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3
140
160
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
5.0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC
-30 V
RC
SCOPE
t, TIME (s)
μ
RB
D1
51
0
V1
approx
-12 V
≈ 8.0 k ≈ 120
25 ms
0.7
0.5
0.3
0.2
+4.0 V
for td and tr, D1 is disconnected
and V2 = 0
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
tf
1.0
TUT
V2
approx
+8.0 V
0.1
0.07
0.05
0.1
For NPN test circuit reverse all polarities.
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 3. Switching Times Test Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
PNP
NPN
ts
3.0
2.0
tr
td @ VBE(off) = 0 V
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
Figure 4. Switching Times
0.1
0.1
0.07
0.05
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) ZqJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
100
200
500 1.0 k
Figure 5. Thermal Response
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
IC, COLLECTOR CURRENT (mA)
20
10
5ms
5.0
100 ms
2.0
1ms
d­
TJ = 150°C
c
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
1.0
0.5
0.2
0.1
TIP100, TIP105
TIP101, TIP106
TIP102, TIP107
0.05
0.02
1.0
10
2.0
5.0
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 6. Active−Region Safe Operating Area
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4
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
h fe , SMALL-SIGNAL CURRENT GAIN
10,000
5000
3000
2000
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
1000
500
300
200
100
50
30
20
10
1.0
PNP
NPN
2.0
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
Figure 7. Small−Signal Current Gain
300
TJ = 25°C
C, CAPACITANCE (pF)
200
Cob
100
Cib
70
50
PNP
NPN
30
0.1
0.2
0.5 1.0
2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
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5
50
100
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
NPN
TIP100, TIP101, TIP102
PNP
TIP105, TIP106, TIP107
20,000
20,000
VCE = 4.0 V
VCE = 4.0 V
5000
10,000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
10,000
TJ = 150°C
25°C
3000
2000
-55°C
1000
7000
5000
25°C
3000
2000
700
500
300
200
0.1
300
200
0.1
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
-55°C
1000
500
0.2
TJ = 150°C
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
3.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 9. DC Current Gain
TJ = 25°C
2.6
2.2
IC = 2.0 A
4.0 A
6.0 A
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
3.0
TJ = 25°C
2.6
IC = 2.0 A
2.2
4.0 A
6.0 A
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
5.0 7.0
10
Figure 10. Collector Saturation Region
3.0
3.0
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2.0
1.5
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
1.0
0.5
0.1
0.5 0.7 1.0
2.0 3.0
5.0 7.0
VBE @ VCE = 4.0 V
1.5
VBE(sat) @ IC/IB = 250
1.0
VCE(sat) @ IC/IB = 250
0.2 0.3
2.0
VCE(sat) @ IC/IB = 250
0.5
0.1
10
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages
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6
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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For additional information, please contact your local
Sales Representative
TIP100/D