TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK ● AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with TIP105, TIP106 and TIP107 TO-220 PACKAGE (TOP VIEW) ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current B 1 ● Maximum VCE(sat) of 2.5 V at IC = 8 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP100 Collector-base voltage (IE = 0) TIP101 VCBO 80 V 100 TIP100 TIP101 UNIT 60 TIP102 Collector-emitter voltage (IB = 0) VALUE 60 VCEO TIP102 80 V 100 V EBO 5 V IC 8 A ICM 15 A IB 1 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 80 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W ½LIC 2 10 mJ Tj -65 to +150 °C Tstg -65 to +150 °C TL 260 °C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER V (BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE VEC TEST CONDITIONS Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current MIN TIP100 IC = 30 mA IB = 0 (see Note 5) TYP MAX TIP101 80 TIP102 100 V VCE = 30 V IB = 0 TIP100 50 V CE = 40 V IB = 0 TIP101 50 V CE = 50 V IB = 0 TIP102 50 VCB = 60 V IE = 0 TIP100 50 V CB = 80 V IE = 0 TIP101 50 V CB = 100 V IE = 0 TIP102 50 VEB = IC = 0 5V Forward current VCE = 4V IC = 3 A transfer ratio V CE = 4V IC = 8 A 8 (see Notes 5 and 6) UNIT 60 1000 µA µA mA 20000 200 Collector-emitter IB = 6 mA IC = 3 A saturation voltage IB = 80 mA IC = 8 A VCE = 4V IC = 8 A (see Notes 5 and 6) 2.8 V IE = 8A IB = 0 (see Notes 5 and 6) 3.5 V Base-emitter voltage Parallel diode forward voltage 2 (see Notes 5 and 6) 2.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W Cθ C Thermal capacitance of case 0.9 J/°C resistive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN TYP MAX UNIT td Delay time 35 ns tr Rise time IC = 8 A IB(on) = 80 mA IB(off) = -80 mA 350 ns ts Storage time V BE(off) = -5 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 1.8 µs tf Fall time 2.45 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AA 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 4 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS130AB 2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 1·5 1·0 TC = -40°C TC = 25°C TC = 100°C 0·5 0·5 IC - Collector Current - A 1·0 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS130AA tp = 100 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 5 ms, d = 0.1 = 10% DC Operation 10 1·0 TIP100 TIP101 TIP102 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 TC - Case Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT MDXXBE INFORMATION 5 TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION