TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP105/106/107 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-Emitter Voltage : TIP100 : TIP101 : TIP102 : TIP100 : TIP101 : TIP102 Value 60 80 100 Units V V V 60 80 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 1 A PC Collector Dissipation (Ta=25°C) 2 W 80 W TJ Collector Dissipation (TC=25°C) Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Equivalent Circuit C B R1 R2 R 1 ≅ 10 k Ω R 2 ≅ 0.6 k Ω E Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO ICBO Parameter Collector-Emitter Sustaining Voltage : TIP100 : TIP101 : TIP102 Test Condition IC = 30mA, IB = 0 Min. Max. 60 80 100 Units V V V Collector Cut-off Current : TIP100 : TIP101 : TIP102 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 50 50 50 µA µA µA : TIP100 : TIP101 : TIP102 VCE = 60V, IE = 0 VCE = 80V, IE = 0 VCE = 100V, IE = 0 50 50 50 µA µA µA 2 mA Collector Cut-off Current IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE DC Current Gain VCE = 4V, IC = 3A VCE = 4V, IC = 8A VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 6mA IC = 8A, IB = 80mA VBE(on) Base-Emitter ON Voltage VCE = 4V, IC = 8A 2.8 V Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 200 pF ©2001 Fairchild Semiconductor Corporation 1000 200 20000 2 2.5 V V Rev. A1, June 2001 TIP100/101/102 Typical Characteristics 5 700 uA 0.9mA 4 0.8mA 10k 600 uA 400u 3 500 VCE = 4V uA A hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 1mA IB = 300 uA IB = 200 uA 2 1 1k IB = 100 uA 0 0 1 2 3 4 100 0.1 5 1 Figure 2. DC current Gain 10k 10k Ic = 500 IB Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic V BE(sat) 1k V CE(sat) 100 0.1 1 10 1k 100 10 1 0.1 100 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 120 100 10 10 0µ s s 5m DC 1 TIP100 0.1 TIP101 PC[W], POWER DISSIPATION 100 1ms IC[A], COLLECTOR CURRENT 10 Ic[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 80 60 40 20 TIP102 0.01 0.1 0 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 TIP100/101/102 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3