MURF1660CT D

MURF1660CTG
Switch-mode Power
Rectifier
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
•
•
•
•
•
•
•
•
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Ultrafast 60 Nanosecond Recovery Times
150°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
High Temperature Glass Passivated Junction
Low Leakage Specified @ 150°C Case Temperature
Current Derating @ Both Case and Ambient Temperatures
Electrically Isolated. No Isolation Hardware Required.
This is a Pb−Free Package*
ULTRAFAST RECTIFIER
16 AMPERES, 600 VOLTS
1
2
3
MARKING
DIAGRAM
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
ISOLATED TO−220
CASE 221AH
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
600
V
Average Rectified Forward Current
Total Device, (Rated VR), TC = 150°C
Per Diode
Per Device
IF(AV)
A
8
16
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz),
TC = 150°C
IFM
16
A
Non−repetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
IFSM
100
A
TJ, Tstg
− 65 to +150
°C
Operating Junction and Storage Temperature
RMS Isolation Voltage
(t = 0.3 second, R.H. ≤ 30%, TA = 25°C)
(Note 1) Per Figure 3
Viso1
V
1
2
AYWW
U1660G
AKA
3
A
Y
WW
U1660
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MURF1660CTG
TO−220
(Pb−Free)
50 Units / Rail
4500
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Proper strike and creepage distance must be provided.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 6
1
Publication Order Number:
MURF1660CT/D
MURF1660CTG
THERMAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Symbol
Value
Unit
RqJC
3.0
°C/W
TL
260
°C
Symbol
Value
Unit
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 150°C)
(Rated DC Voltage, TC = 25°C)
iR
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
trr
1.20
1.50
500
10
60
50
V
mA
ns
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
100
50
TJ = 150°C
20
100°C
25°C
10
5
2
1
0.5
0.2
0.1
0.4
0.6
1.0
1.2
0.8
1.4
vF, INSTANTANEOUS VOLTAGE (V)
1.6
1.8
Figure 1. Typical Forward Voltage, Per Leg
10 K
I R, REVERSE CURRENT (A)
μ
1.0 K
100
TJ = 150°C
10
100°C
1.0
25°C
0.1
0.01
100
200
300
400
VR, REVERSE VOLTAGE (V)
500
Figure 2. Typical Reverse Current, Per Leg*
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2
600
MURF1660CTG
TEST CONDITION FOR ISOLATION TEST*
FULLY ISOLATED PACKAGE
LEADS
HEATSINK
0.110, MIN
Figure 3. Mounting Position
* Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION
CLIP
HEATSINK
Clip−Mounted
Figure 4. Typical Mounting Technique
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3
MURF1660CTG
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE E
A
E
B
P
E/2
0.14
Q
D
M
B A
M
A
H1
A1
C
NOTE 3
1 2 3
L
L1
3X
3X
b2
SEATING
PLANE
c
b
0.25
M
B A
M
C
A2
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.90
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.70
7.10
12.70
14.73
--2.10
3.00
3.40
2.80
3.20
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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MURF1660CT/D