NTSJ3080CTG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low VF = 0.455 V at IF = 5 A http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability Pb−Free and Halide−Free Packages are Available 1 2, 4 3 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • PIN CONNECTIONS ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation TO−220FB CASE 221AH MARKING DIAGRAMS Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal • AYWW TS3080CG AKA Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 1 A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 0 1 Publication Order Number: NTSJ3080CT/D NTSJ3080CTG MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 115°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 110°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Symbol Value Unit VRRM VRWM VR 80 V IF(AV) A 30 15 IFRM A 60 30 IFSM 160 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance (insertion mounted to 1 oz FR4 Board) Symbol Value Unit Junction−to−Case RqJC 4.0 °C/W Junction−to−Ambient RqJA 105 °C/W 1. Junction−to−Case, using large Heatsink attached to device. 2. Junction−to−Ambient, using with no Heatsink. ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 3) (IF = 5 A, TJ = 25°C) (IF = 7.5 A, TJ = 25°C) (IF = 15 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 7.5 A, TJ = 125°C) (IF = 15 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR Typ Max 0.516 0.576 0.734 − − 0.85 0.455 0.522 0.627 − − 0.68 20 8 700 30 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% ORDERING INFORMATION Device NTSJ3080CTG Package Shipping TO−220FB (Pb−Free) 50 Units / Rail http://onsemi.com 2 Unit V mA mA NTSJ3080CTG 100 100 TA = 150°C TA = 25°C I R , REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISITICS 10 TA = 125°C 1.0 0.1 TA = 150°C 10 TA = 125°C 1.0 0.1 TA = 25°C 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 30 20 CJ, JUNCTION CAPACITANCE (pF) 10000 TJ = 25°C 1000 100 10 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 30 25 20 15 SQUARE WAVE 10 5 0 0 20 30 dc RqJC = 1.3°C/W 45 40 35 30 25 SQUARE WAVE 20 15 10 5 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 Figure 4. Current Derating per Leg 60 0 RqJC = 1.3°C/W dc Figure 3. Typical Junction Capacitance 55 50 80 Figure 2. Typical Reverse Current IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Forward Voltage 50 70 40 60 VR, REVERSE VOLTAGE (VOLTS) 25 IPK/IAV = 5 IPK/IAV = 20 20 SQUARE WAVE 15 10 dc 5 0 140 IPK/IAV = 10 TA = 150°C 0 2 4 6 8 10 12 14 16 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 18 NTSJ3080CTG TYPICAL CHARACTERISITICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 50% Duty Cycle 1 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, Pulse Time (sec) Figure 7. Typical Transient Thermal Response, Junction−to−Case http://onsemi.com 4 100 1000 NTSJ3080CTG PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE B A E B P E/2 0.14 M B A M SEATING PLANE A H1 A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.70 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.70 7.10 12.70 14.73 --2.80 3.00 3.40 2.80 3.20 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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