MC74LCX07 Low-Voltage CMOS Hex Buffer with Open Drain Outputs With 5 V−Tolerant Inputs The MC74LCX07 is a high performance hex buffer operating from a 2.3 to 3.6 V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers. These LCX devices have open drain outputs which provide the ability to set output levels, or do active−HIGH AND or active−LOW OR functions. A VI specification of 5.5 V allows MC74LCX07 inputs to be safely driven from 5.0 V devices. http://onsemi.com MARKING DIAGRAMS 14 14 1 Features LCX07G AWLYWW 1 Designed for 2.3 to 3.6 V VCC Operation 5.0 V Tolerant Inputs/Outputs 14 14 LVTTL Compatible LVCMOS Compatible 1 24 mA Output Sink Capability Near Zero Static Supply Current (10 mA) Substantially Reduces System Power Requirements Latchup Performance Exceeds 500 mA Wired−OR, Wired−AND Output Level Can Be Set Externally Without Affecting Speed of SOIC−14 D SUFFIX CASE 751A Device ESD Performance: Human Body Model >1500 V; Machine Model >200 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant VCC A3 O3 A4 O4 A5 O5 14 13 12 11 10 9 8 1 2 3 4 5 6 7 A0 O0 A1 O1 A2 O2 GND TSSOP−14 DT SUFFIX CASE 948G 1 LCX 07 ALYWG G A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G = Pb−Free Package G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Figure 1. Pinout: 14−Lead (Top View) Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 14 1 Publication Order Number: MC74LCX07/D MC74LCX07 A0 A1 A2 A3 A4 A5 1 3 5 13 11 9 * 2 * 4 * 6 * 12 * 10 * 8 O0 PIN NAMES O1 O2 O3 Pins Function An On Data Inputs Outputs TRUTH TABLE O4 An On O5 L H L Z * OD Figure 2. Logic Diagram MAXIMUM RATINGS Symbol Parameter Value VCC DC Supply Voltage VI DC Input Voltage −0.5 v VI v +7.0 VO DC Output Voltage −0.5 v VO v +7.0 IIK DC Input Diode Current IOK DC Output Diode Current IO DC Output/Sink Current ICC DC Supply Current Per Supply Pin IGND DC Ground Current Per Ground Pin TSTG Storage Temperature Range MSL Moisture Sensitivity Condition −0.5 to +7.0 Unit V V Output in HIGH or LOW State (Note 1) V −50 VI < GND mA −50 VO < GND mA +50 VO > VCC mA +50 mA $100 mA $100 mA −65 to +150 C Level 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IO absolute maximum rating must be observed. ORDERING INFORMATION Package Shipping† MC74LCX07DG SOIC−14 (Pb−Free) 55 Units / Rail MC74LCX07DR2G SOIC−14 (Pb−Free) 2500 Tape & Reel MC74LCX07DTG TSSOP−14 (Pb−Free) 96 Units / Rail MC74LCX07DTR2G TSSOP−14 (Pb−Free) 2500 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MC74LCX07 RECOMMENDED OPERATING CONDITIONS Symbol Parameter Operating Data Retention Only Min Typ Max Unit 2.0 1.5 2.3 to 3.3 5.5 5.5 V 0 5.5 V 0 5.5 V VCC Supply Voltage VI Input Voltage VO Output Voltage IOH HIGH Level Output Current VCC= 3.0 V−3.6 V VCC= 2.7 V−3.0 V VCC= 2.3 V−2.7 V −24 −12 −8 mA IOL LOW Level Output Current VCC = 3.0 V−3.6 V VCC = 2.7 V−3.0 V VCC = 2.3 V−2.7 V +24 +12 +8 mA TA Operating Free−Air Temperature −40 +85 C Dt/DV Input Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V, VCC = 3.0 V 0 10 ns/V (HIGH or LOW State) DC ELECTRICAL CHARACTERISTICS TA = −40C to +85C Symbol VIH VIL VOL Characteristic HIGH Level Input Voltage (Note 2) LOW Level Input Voltage (Note 2) LOW Level Output Voltage Condition 2.3 V VCC 2.7 V Min Max Unit V 2.7 V VCC 3.6 V 2.0 4.5 V VCC 5.25 V 2.3 V VCC 2.7 V 3.125 0.7 V 2.7 V VCC 3.6 V 0.8 1.7 4.5 V VCC 5.25 V 0.8 2.3 V VCC 3.6 V; IOL = 100 mA 0.2 VCC = 2.3 V; IOL= 8 mA 0.3 VCC = 2.7 V; IOL= 12 mA 0.4 VCC = 3.0 V; IOL = 16 mA 0.4 V VCC = 3.0 V; IOL = 24 mA 0.55 VCC = 3.6 V, VIN = VIH or VIL, VOUT = 0 to 5.5 V $5 mA VCC = 0, VIN = 5.5 V or VOUT = 5.5 V 10 mA Input Leakage Current VCC = 3.6 V, VIN = 5.5 V or GND $5 mA Quiescent Supply Current VCC = 3.6 V, VIN = 5.5 V or GND 10 mA 2.3 V VCC 3.6 V 4.5 V VCC 5.5 V VCC = 5.25 V, one input at 3.125 V, other inputs at VCC or GND 500 1.0 10 mA mA mA IOZ 3−State Output Current IOFF Power Off Leakage Current IIN ICC DICC Increase in ICC per Input 2. These values of VI are used to test DC electrical characteristics only. AC ELECTRICAL CHARACTERISTICS Limits TA= −405C to +855C Symbol tPLZ tPZL Parameter Propagation Delay Input to Output VCC = 3.3 V $ 0.3 V VCC= 2.7 V CL= 50 pF CL= 50 pF VCC = 2.5 V $ 0.2 V CL= 30 pF Min Max Min Max Min Max Unit 0.5 0.5 3.0 3.0 0.8 0.8 3.7 3.7 0.8 0.8 3.8 3.8 ns ns http://onsemi.com 3 MC74LCX07 DYNAMIC SWITCHING CHARACTERISTICS TA = +25C Symbol Characteristic Min Condition Typ Max Unit VOLP Dynamic LOW Peak Voltage (Note 3) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH =2.5 V, VIL = 0 V 0.9 0.7 V VOLV Dynamic LOW Valley Voltage (Note 3) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V −0.8 −0.6 V 3. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS Symbol Parameter CIN Input Capacitance COUT Output Capacitance CPD Power Dissipation Capacitance Condition Typical Unit VCC = 3.3 V, VI = 0 V or VCC 7 pF VCC = 3.3 V, VI = 0 V or VCC 8 pF 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 25 pF VCC Vmi An Vmi 0V tPZL On tPLZ Vmo VLZ VOL PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1MHz; tW = 500 ns VCC Symbol 3.3 V $ 0.3 V 2.7 V 2.5 V $ 0.2 V Vmi 1.5 V 1.5 V VCC/2 Vmo 1.5 V 1.5 V VCC/2 VLZ VOL + 0.3 V VOL + 0.3 V VOL + 015 V Figure 3. AC Waveforms VCC 6 V or VCC 2 R1 PULSE GENERATOR DUT RT CL TEST SWITCH tPZL, tPLZ 6V Open Collector/Drain tPLH and tPHL 6V tPZH, tPHZ CL = CL = RL = RT = RL GND 50 pF at VCC = 3.3 "0.3 V or equivalent (includes jig and probe capacitance) 30 pF at VCC = 2.5 "0.2 V or equivalent (includes jig and probe capacitance) R1 = 500 W or equivalent ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit http://onsemi.com 4 GND MC74LCX07 PACKAGE DIMENSIONS TSSOP−14 CASE 948G ISSUE B 14X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S N 2X 14 L/2 0.25 (0.010) 8 M B −U− L PIN 1 IDENT. N F 7 1 0.15 (0.006) T U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. S S DETAIL E K A −V− ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ K1 J J1 DIM A B C D F G H J J1 K K1 L M SECTION N−N −W− C 0.10 (0.004) −T− SEATING PLANE D H G DETAIL E SOLDERING FOOTPRINT* 7.06 1 0.65 PITCH 14X 0.36 14X 1.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS INCHES MIN MAX MIN MAX 4.90 5.10 0.193 0.200 4.30 4.50 0.169 0.177 −−− 1.20 −−− 0.047 0.05 0.15 0.002 0.006 0.50 0.75 0.020 0.030 0.65 BSC 0.026 BSC 0.50 0.60 0.020 0.024 0.09 0.20 0.004 0.008 0.09 0.16 0.004 0.006 0.19 0.30 0.007 0.012 0.19 0.25 0.007 0.010 6.40 BSC 0.252 BSC 0_ 8_ 0_ 8_ MC74LCX07 PACKAGE DIMENSIONS SOIC−14 NB CASE 751A−03 ISSUE K D A B 14 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. A3 E H L 1 0.25 M DETAIL A 7 B 13X M b 0.25 M C A S B S e DETAIL A h A X 45 _ M A1 C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ SOLDERING FOOTPRINT* 6.50 14X 1.18 1 1.27 PITCH 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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