MC74VHCT257A D

MC74VHCT257A
Quad 2-Channel Multiplexer
with 3-State Outputs
The MC74VHCT257A is an advanced high speed CMOS quad
2−channel multiplexer fabricated with silicon gate CMOS technology.
It achieves high speed operation similar to equivalent Bipolar
Schottky TTL while maintaining CMOS low power dissipation.
It consists of four 2−input digital multiplexers with common
select (S) and enable (OE) inputs. When (OE) is held High, selection
of data is inhibited and all the outputs go Low.
The select decoding determines whether the A or B inputs get routed
to the corresponding Y outputs.
The VHCT inputs are compatible with TTL levels. This device can
be used as a level converter for interfacing 3.3 V to 5.0 V because it
has full 5.0 V CMOS level output swings.
The VHCT257A input structures provide protection when voltages
between 0 V and 5.5 V are applied, regardless of the supply voltage.
The output structures also provide protection when VCC = 0 V. These
input and output structures help prevent device destruction caused by
supply voltage−input/output voltage mismatch, battery backup, hot
insertion, etc.
The internal circuit is composed of three stages, including a buffered
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
Features
•
•
•
•
•
•
•
•
•
•
•
High Speed: tPD = 4.1 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 4.0 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
Power Down Protection Provided on Inputs and Outputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
These Devices are Pb−Free and are RoHS Compliant
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 7
1
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MARKING
DIAGRAMS
16
SOIC−16
D SUFFIX
CASE 751B
1
VHCT257AG
AWLYWW
1
16
VHCT
257A
ALYWG
G
TSSOP−16
DT SUFFIX
CASE 948F
1
1
A
= Assembly Location
WL, L
= Wafer Lot
Y
= Year
WW, W = Work Week
G or G
= Pb−Free Package
(Note: Microdot may be in either location)
FUNCTION TABLE
Inputs
OE
H
L
L
Outputs
Y0 − Y3
S
X
L
H
Z
A0 −A3
B0 −B3
A0 − A3, B0 − B3 = the levels of
the respective Data−Word Inputs.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
MC74VHCT257A/D
MC74VHCT257A
S
1
16
VCC
A0
2
15
OE
B0
3
14
A3
Y0
4
13
B3
A1
5
12
Y3
B1
6
11
A2
Y1
7
10
B2
GND
8
9
Y2
OE
S
A0
B0
A1
B1
A2
B2
A3
B3
Figure 1. Pin Assignment
OE
I0a
I1a
Za
I0b
I1b
Zb
15
1
EN
G1
2
3
5
6
1
1
MUX
4
7
11
10
14
13
9
12
Y0
Y1
Y2
Y3
Figure 2. IEC Logic Symbol
I0c
I1c
I0d
Zc
I1d
Zd
Figure 3. Expanded Logic Diagram
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2
S
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
MC74VHCT257A
MAXIMUM RATINGS
Symbol
Parameter
VCC
Positive DC Supply Voltage
Value
Unit
−0.5 to +7.0
V
−0.5 to +7.0
V
−0.5 to +7.0
−0.5 to VCC +0.5
V
VIN
Digital Input Voltage
VOUT
DC Output Voltage
IIK
Input Diode Current
−20
mA
IOK
Output Diode Current
$20
mA
IOUT
DC Output Current, per Pin
$25
mA
ICC
DC Supply Current, VCC and GND Pins
$75
mA
PD
Power Dissipation in Still Air
200
180
mW
TSTG
Storage Temperature Range
−65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
>2000
>200
>2000
V
Above VCC and Below GND at 125°C (Note 4)
$300
mA
143
164
°C/W
ILATCHUP
qJA
Latchup Performance
Output in 3−State
High or Low State
SOIC
TSSOP
Thermal Resistance, Junction−to−Ambient
SOIC
TSSOP
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
4.5
5.5
V
DC Input Voltage
0
5.5
V
VOUT
DC Output Voltage
0
5.5
V
TA
Operating Temperature Range, all Package Types
−55
125
°C
tr, tf
Input Rise or Fall Time
0
20
ns/V
VCC
DC Supply Voltage
VIN
VCC = 5.0 V + 0.5 V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80 ° C
117.8
419,300
TJ = 90 ° C
1,032,200
90
TJ = 100 ° C
80
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 110° C
Time, Years
TJ = 120° C
Time, Hours
TJ = 130 ° C
Junction
Temperature °C
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO
0.1% BOND FAILURES
1
1
10
100
1000
TIME, YEARS
Figure 4. Failure Rate vs. Time Junction Temperature
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3
MC74VHCT257A
DC CHARACTERISTICS (Voltages Referenced to GND)
VCC
Symbol
(V)
Min
VIH
Minimum High−Level
Input Voltage
4.5 to 5.5
2
VIL
Maximum Low−Level
Input Voltage
4.5 to 5.5
VOH
Maximum High−Level
Output Voltage
VOL
Parameter
Maximum Low−Level
Output Voltage
Condition
TA ≤ 85°C
TA = 25°C
Typ
Max
Min
−55°C ≤ TA ≤ 125°C
Max
Min
2
0.8
Max
2
Unit
V
0.8
0.8
V
V
VIN = VIH or VIL
IOH = −50 mA
4.5
3.94
3.8
3.66
VIN = VIH or VIL
IOH = −8 mA
4.5
3.94
3.8
3.66
VIN = VIH or VIL
IOL = 50 mA
4.5
VIN = VIH or VIL
IOH = 8 mA
V
0
0.1
0.1
0.1
4.5
0.36
0.44
0.52
IIN
Input Leakage Current
VIN = 5.5 V or GND
0 to 5.5
±0.1
±1.0
±1.0
mA
IOZ
Maximum 3−State
Leakage Current
VIN = VIH or VIL
VOUT = VCC or GND
5.5
±0.2
5
±2.5
±2.5
mA
ICCT
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
1.35
1.5
1.65
mA
ICC
Additional Quiescent
Supply Current (per pin)
VIN = VCC or GND
5.5
4.0
40
40
mA
Output Leakage Current
VOUT = 5.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IOPD
0
0.5
5
5
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = ≤ 85°C
TA = 25°C
Symbol
Parameter
tPLH,
tPHL
Maximum Propagation Delay, A or B to Y
tPLH,
tPHL
tPZL,
tPZH
tPLZ,
tPHZ
CIN
Maximum Propagation Delay, S to Y
Maximum Output Enable,
Time, OE to Y
Maximum Output Disable,
Time, OE to Y
Min
Test Conditions
−55°C ≤ TA ≤ 125°C
Typ
Max
Min
Max
Min
Max
Unit
ns
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
5.8
8.3
9.3
12.8
1.0
1.0
11.0
14.5
1.0
1.0
11.0
14.5
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
3.6
5.1
5.9
7.9
1.0
1.0
7.0
9.0
1.0
1.0
7.0
9.0
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
7.0
9.5
11.0
14.5
1.0
1.0
13.0
16.5
1.0
1.0
13.0
16.5
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
4.0
5.5
6.8
8.8
1.0
1.0
8.0
10.0
1.0
1.0
8.0
10.0
VCC = 3.3 ± 0.3 V
RL = 1 kW
CL = 15 pF
CL = 50 pF
6.7
9.2
10.5
14.0
1.0
1.0
12.5
16.0
1.0
1.0
12.5
16.0
VCC = 5.0 ± 0.5 V
RL = 1 kW
CL = 15 pF
CL = 50 pF
3.6
5.1
6.8
11.0
1.0
12.0
8.0
10.0
1.0
1.0
8.0
12.0
VCC = 3.3 ± 0.3 V
RL = 1 kW
CL = 50 pF
10.5
14.0
1.0
15.0
1.0
15.0
VCC = 5.0 ± 0.5 V
RL = 1 kW
CL = 50 pF
9.5
12.0
1.0
13.0
1.0
13.0
4
10
Maximum Input Capacitance
10
10
ns
ns
ns
pF
Typical @ 25°C, VCC = 5.0 V
20
CPD
Power Dissipation Capacitance (Note 5)
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V)
TA = 25°C
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
− 0.3
− 0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
2.0
V
VILD
Maximum Low Level Dynamic Input Voltage
0.8
V
Characteristic
Symbol
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4
MC74VHCT257A
VCC
OE
50%
GND
VCC
50%
A, B or S
tPHL
tPLH
Y
tPZL
GND
tPLZ
50% VCC
Y
tPZH
50% VCC
VOH - 0.3V
HIGH
IMPEDANCE
Figure 6. Switching Waveform
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
VOL + 0.3V
tPHZ
50% VCC
Y
Figure 5. Switching Waveform
HIGH
IMPEDANCE
DEVICE
UNDER
TEST
CL*
OUTPUT
1 kW
CL *
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
*Includes all probe and jig capacitance
*Includes all probe and jig capacitance
Figure 7. Test Circuit
Figure 8. Test Circuit
INPUT
Figure 9. Input Equivalent Circuit
ORDERING INFORMATION
Package
Shipping†
MC74VHCT257ADG
SOIC−16
(Pb−Free)
48 Units / Rail
MC74VHCT257ADR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
MC74VHCT257ADTG
TSSOP−16
(Pb−Free)
96 Units / Rail
M74VHCT257ADTR2G
TSSOP−16
(Pb−Free)
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MC74VHCT257A
PACKAGE DIMENSIONS
SOIC−16
D SUFFIX
CASE 751B−05
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
−A−
16
9
−B−
1
P
8 PL
0.25 (0.010)
8
B
M
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
S
SOLDERING FOOTPRINT
8X
6.40
16X
1
1.12
16
16X
0.58
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
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6
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
MC74VHCT257A
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F
ISSUE B
16X K REF
0.10 (0.004)
0.15 (0.006) T U
T U
M
S
V
S
S
K
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
ÇÇÇ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
N
0.25 (0.010)
8
1
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
D
DETAIL E
G
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
SOLDERING FOOTPRINT
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
7.06
1
0.65
PITCH
16X
0.36
16X
1.26
DIMENSIONS: MILLIMETERS
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MC74VHCT257A/D