NCP3712ASNT1 D

NCP3712ASN,
SZNCP3712ASN
Over Voltage Protected
High Side Switch
This switch is primarily intended to protect loads from transients by
isolating the load from the transient energy rather than absorbing it.
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Features
MARKING
DIAGRAM
• Capable of Switching Loads of up to 200 mA without External
•
•
•
•
•
•
•
•
•
•
Rboost
Switch Shuts Off in Response to an Over Voltage Input Transient
Features Active Turn Off for Fast Input Transient Protection
Flexible Over Voltage Protection Threshold Set with External Zener
Automatic Recovery after Transient Decays Below Threshold
Withstands Input Transients up to 105 V Peak
Guaranteed Off State with Enbl Input
ESD Resistant in Accordance with the 2000 V Human Body Model
Extremely Low Saturation Voltage
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
SC−74
CASE 318F
6
1
BAG = Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
INTERNAL CIRCUIT DIAGRAM/
PIN CONFIGURATION
Vout
Vin
Q2
(5)
(6)
R2
R4
Applications Include:
•
•
•
•
•
BAG MG
G
High Voltage Transient Isolation
Power Switching to Electronic Modules
DC Power Distribution in Line Operated Equipment
Buffering Sensitive Circuits from Poorly Regulated Power Supplies
Pre−conditioning of Voltage Regulator Input Voltage
Q1
Rboost
N.C.
(3)
(2)
R1
(4)
Vin
VZ
R3
(1)
Enbl
Vout
ORDERING INFORMATION
Rboost
NCP3712ASN
+
VZ
Device
NCP3712ASNT1G
SC−74
SZNCP3712ASNT1G (Pb−Free)
Ropt
L
O
A
D
Enbl
or
1 k (min)
P. S.
−
Package
Shipping†
3000 / Tape &
Reel
SC−74
10,000 / Tape &
NCP3712ASNT3G
SZNCP3712ASNT3G (Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SW
Figure 1. Typical Application Circuit
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 8
1
Publication Order Number:
NCP3712ASNT1/D
NCP3712ASN, SZNCP3712ASN
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Symbol
Value
Unit
Vio
105
V
Reverse Input−to−Vz. Voltage
Vin(rev)
−9.0
V
Reverse Input−to−Rboost Voltage
Vin(rev)
−5.0
V
Output Load Current − Continuous
Iload
−300
mA
Enbl Input Current − Continuous
Ienbl
5.0
mA
Iz
3.0
mA
Iboost
10
mA
Junction Temperature
TJ
125
°C
Operating Ambient Temperature Range
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−65 to +150
°C
Device Power Dissipation (Minimum Footprint)
PD
300
mW
−
2.4
mW/°C
ILatchup
200
200
mA
Rating
Input−to−Output Voltage
Vz Input Current − Continuous
Rboost Input Current − Continuous
Derate Above 25°C
Latchup Performance:
Positive
Negative
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 1500 V per MIL−STD−883, Method 3015.
Machine Model Method 150 V.
KEY
A+
FB*
1N4004
0.01 mF
TYP
Vout
Enbl
0.027 mF
TYP
1
N.C.
Ienbl
18 V
TYP R
opt
2
Rboost
Iboost
NCP3712
ASN
6
Vin
Iload
Renbl
5
VZ
4
3
0−500 W
Rload
1.0 k TYP
IZ
FB*
A−
*FB = MMZ2012 Y601B
Figure 2. Typical Applications Circuit for Load Dump Transient Protection
120
13.5 V SUPPLY RAIL
“ENABLE
NOT”
INPUT
10
50%
AMPLITUDE
tpLH
TYPICAL
INPUT
TRANSIENT
100
DEVICE OUTPUT
VOLTAGE
AMPLITUDE (V)
AMPLITUDE (V)
15
LOAD
DEPENDENT
EXP DECAY
5
80
60
13.5 V
SUPPLY
RAIL
40
Voff
20
0
LOAD
DEPENDENT
OUTPUT
EXP DECAY
Von
0
0
5
10
15
30
20 25
TIME (ms)
35
40
45
50
0
Figure 3. Enable NOT Switching Waveforms
50
100
150
200
TIME (ms)
250
300
Figure 4. Load Dump Waveforms
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2
350
NCP3712ASN, SZNCP3712ASN
ELECTRICAL CHARACTERISTICS (Vin = 12.5 VDC Ref to Gnd, TA = 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
105
−
−
−
−0.7
−
−
−
−100
13
−
−
150
−
−
15.5
−
18.7
−
0.2
0.5
−
−
−
−
−
−
−200
−200
−300
8.5
−
10.5
−
−
−1.0
tPHL
tPLH
−
−
1.5
1.5
−
−
tf
tr
−
−
75
400
−
−
Input Leakage Resistor
R2
7.0
10
13
kW
Input Resistor
R1
3.3
4.7
6.1
kW
Output Leakage Resistor
R4
1.4
2.4
3.2
kW
Enable Input Resistor
R3
1.4
2.4
3.2
kW
Characteristic
Unit
OFF CHARACTERISTICS
V(BRio)
Input−Output Breakdown Voltage
(@ Iout = 200 mA)
Output Reverse Breakdown Voltage
(@ Iout = −1.0 mA Pulse)
Vdc
V(−BRout)
Output Leakage Current
(Vin = Venbl = 30 V, TA = 25°C)
Iload(off)
Guaranteed “Off” State “ENBL NOT” Voltage
(IO ≤ 100 mA)
Venbl(off)
Required “Off” State Iz Current
(Rload = 100 W)
Iz(off)
Vin(off)
(Vz = 16 V, Iload = 100 mA, Renbl = 1500 W)
Voff
Vdc
mAdc
Vdc
mAdc
Vdc
ON CHARACTERISTICS
Input−Output On Voltage
(Io = 100 mA, Ienbl = −3.0 mA)
Vio(on)
Output Load Current ⎯ Continuous
(Ienbl = −3.0 mA, Vio(on) = 0.5 Vdc)
(Iboost = −9.0 mA, Vio(on) = 0.5 Vdc)
(Iboost = −9.0 mA, Vio(on) = 0.6 Vdc)
Io(on)
Vin(on)
(Vz = 16 V, Iload = 100 mA, Renbl = 1500 W)
Von
“ENBL NOT” Input Current
(Io = 100 mA, Vio(on) = 0.35 Vdc, Renbl = 1500 W)
Ienbl
Vdc
mAdc
Vdc
mAdc
SWITCHING CHARACTERISTICS
mS
Propagation Delay Time:
Hi to Lo Prop Delay; Fig. 3 (Vin = Venbl = 13.5 V)
Lo to Hi Prop Delay; Fig. 3 (Vin = 13.5 V, Venbl = 0 V)
hS
Transition Times:
Fall Time; Fig. 4 (Vin = Venbl = 13.5 V)
Rise Time; Fig. 4 (Vin = Venbl = 0 V)
INTERNAL RESISTORS
IBASE, BASE CURRENT (mA)
2.95
2.9
2.85
2.8
2.75
2.7
2.65
2.6
2.55
IC − 300 mA
VCE − 600 mV
2.5
2.45
−40
−20
0
20
40
60
TEMPERATURE (°C)
80
100
Figure 5. Q2 Base Current vs Temperature with Pin 4 Open
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3
NCP3712ASN, SZNCP3712ASN
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05.
D
6
5
4
2
3
E
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
q
b
e
C
A
0.05 (0.002)
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
L
A1
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
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NCP3712ASNT1/D