ONSEMI MDC3105LT1

MDC3105LT1
Integrated Relay,
Inductive Load Driver
This device is intended to replace an array of three to six discrete
components with an integrated SMT part. It is available in a SOT−23
package. It can be used to switch 3 to 6 Vdc inductive loads such as
relays, solenoids, incandescent lamps, and small DC motors without
the need of a free−wheeling diode.
• Provides a Robust Driver Interface between D.C. Relay Coil and
Sensitive Logic Circuits
• Optimized to Switch Relays from a 3 V to 5 V Rail
• Capable of Driving Relay Coils Rated up to 2.5 W at 5 V
• Features Low Input Drive Current & Good Back−to−Front Transient
Isolation
• Internal Zener Eliminates Need for Free−Wheeling Diode
• Internal Zener Clamp Routes Induced Current to Ground for Quieter
System Operation
• Guaranteed Off State with No Input Connection
• Supports Large Systems with Minimal Off−State Leakage
• ESD Resistant in Accordance with the 2000 V Human Body Model
• Low Sat Voltage Reduces System Current Drain by Allowing Use of
Higher Resistance Relay Coils
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RELAY/INDUCTIVE
LOAD DRIVER
SILICON SMALLBLOCK
INTEGRATED CIRCUIT
MARKING
DIAGRAM
3
SOT−23
(TO−236)
CASE 318
STYLE 6
1
2
JW
D
JW D
= Specific Device Code
= Date Code
Applications Include:
• Telecom: Line Cards, Modems, Answering Machines, FAX
INTERNAL CIRCUIT DIAGRAM
Machines, Feature Phone Electronic Hook Switch
• Computer & Office: Photocopiers, Printers, Desktop Computers
• Consumer: TVs & VCRs, Stereo Receivers, CD Players, Cassette
•
•
Recorders, TV Set Top Boxes
Industrial: Small Appliances, White Goods, Security Systems,
Automated Test Equipment, Garage Door Openers
Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,
Lamp Drivers
Vout
Vin
(3)
1.0 k
6.6 V
(1)
33 k
GND
(2)
ORDERING INFORMATION
Device
Package
Shipping†
MDC3105LT1
SOT−23
3000 Units/Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 3
1
Publication Order Number:
MDC3105LT1/D
MDC3105LT1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
VCC
6.0
Vdc
Input Voltage
Vin(fwd)
6.0
Vdc
Reverse Input Voltage
Vin(rev)
−0.5
Vdc
Ezpk
50
mJ
IO
500
mA
Rating
Power Supply Voltage
Repetitive Pulse Zener Energy Limit (Duty Cycle ≤ 0.01%)
Output Sink Current  Continuous
Junction Temperature
TJ
150
°C
Operating Ambient Temperature Range
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−65 to +150
°C
Symbol
Value
Unit
PD
225
1.8
mW
mW/°C
RJA
556
°C/W
THERMAL CHARACTERISTICS
Characteristic
Total Device Power Dissipation(1)
Derate above 25°C
Thermal Resistance Junction to Ambient
1. FR−5 PCB of 1″ x 0.75″ x 0.062″, TA = 25°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BRout)
6.2
6.6
7.0
V
V(−BRout)
—
−0.7
—
V
—
—
—
—
5.0
30
—
—
0.4
—
0.8
1.6
—
0.12
0.16
250
400
—
OFF CHARACTERISTICS
Output Zener Breakdown Voltage
(@ IT = 10 mA Pulse)
Output Leakage Current @ 0 Input Voltage
(VO = 5.5 Vdc, Vin = O.C., TA = 25°C)
(VO = 5.5 Vdc, Vin = O.C., TA = 85°C)
µA
IOO
Guaranteed “OFF” State Input Voltage (IO ≤ 100 A)
Vin(off)
V
ON CHARACTERISTICS
Input Bias Current (HFE Limited)
(IO = 250 mA, VO = 0.25 Vdc)
Iin
Output Saturation Voltage
(IO = 250 mA, Iin = 1.5 mA)
VO(sat)
Output Sink Current  Continuous
(VCE = 0.25 Vdc, Iin = 1.5 mA)
IO(on)
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2
mAdc
Vdc
mA
MDC3105LT1
TYPICAL APPLICATION−DEPENDENT SWITCHING PERFORMANCE
SWITCHING CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
tPHL
tPLH
—
—
55
430
—
—
High to Low Propagation Delay; Figures 1, 13 (3.0 V 74HC04)
Low to High Propagation Delay; Figures 1, 13 (3.0 V 74HC04)
tPHL
tPLH
—
—
85
315
—
—
High to Low Propagation Delay; Figures 1, 14 (5.0 V 74LS04)
Low to High Propagation Delay; Figures 1, 14 (5.0 V 74LS04)
tPHL
tPLH
—
—
55
2.4
—
—
tf
tr
—
—
45
160
—
—
Fall Time; Figures 1, 13 (3.0 V 74HC04)
Rise Time; Figures 1, 13 (3.0 V 74HC04)
tf
tr
—
—
70
195
—
—
Fall Time; Figures 1, 14 (5.0 V 74LS04)
Rise Time; Figures 1, 14 (5.0 V 74LS04)
tf
tr
—
—
45
2.4
—
—
Propagation Delay Times:
High to Low Propagation Delay; Figure 1 (5.0 V 74HC04)
Low to High Propagation Delay; Figure 1 (5.0 V 74HC04)
nS
Transition Times:
Fall Time; Figure 1 (5.0 V 74HC04)
Rise Time; Figure 1 (5.0 V 74HC04)
S
nS
VCC
Vin
Units
50%
GND
tPLH
tPHL
VCC
90%
50%
10%
Vout
VZ
GND
tr
tf
Figure 1. Switching Waveforms
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3
S
MDC3105LT1
TYPICAL PERFORMANCE CHARACTERISTICS
(ON CHARACTERISTICS)
5.0
450
400
25°C
350
300
250
−40°C
200
150
100
100
3.5
MC74HC04
@ 3.0 Vdc
2.5
2.0
MC68HC05C8 @ 3.3 Vdc
MC14049B @ 4.5 Vdc
1.5
MC54LS04
+BAL99LT1
0
1000
0.5
TJ = 25°C
VO = 0.25 V
1.0
1.5
IO, OUTPUT SINK CURRENT (mA)
2.5
3.0
4.0
3.5
Figure 3. Input V−I Requirement Compared to
Possible Source Logic Outputs
50
500
Iin = 1.5 mA
40
Iout , OUTPUT CURRENT (mA)
45
OUTPUT CURRENT (mA)
2.0
INPUT CURRENT (mA)
Figure 2. Transistor DC Current Gain
TJ = 85°C
35
30
25°C
25
20
−40 °C
15
10
1.2 mA
1.0 mA
400
0.8 mA
300
0.6 mA
200
0.4 mA
0.2 mA
100
0.1 mA
5.0
0
0
0
0.01 0.02 0.03 0.04
0.05 0.06 0.07 0.08
0.09
0.1
0
Figure 4. Threshold Effects
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VO, OUTPUT VOLTAGE (Vdc)
INPUT CURRENT (mA)
Figure 5. Transistor Output V−I Characteristic
8.5
TJ = 25°C
VZ , ZENER CLAMP VOLTAGE (VOLTS)
Vout , OUTPUT VOLTAGE (Vdc)
MDC3105LT1
Vin vs. Iin
3.0
0.5
0
0
10
MC68HC05C8
@ 5.0 Vdc
4.0
1.0
VO = 1.0 V
VO = 0.25 V
50
1.0
MC74HC04
@ 4.5 Vdc
4.5
TJ = 85°C
INPUT VOLTAGE (VOLTS)
HFE, TRANSISTOR DC CURRENT GAIN
500
TJ = −40°C
Iout =
500 mA
10 mA
0.04
0.1
50 mA
125 mA
175 mA
350 mA
8.0
7.5
7.0
TJ = 85°C
25°C
6.5
−40 °C
6.0
1.0
1.0
10
Iin, INPUT CURRENT (mA)
10
100
1000
IZ, ZENER CURRENT (mA)
Figure 7. Zener Clamp Voltage versus Zener
C rrent
Figure 6. Output Saturation Voltage versus
I t/Ii
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MDC3105LT1
TYPICAL PERFORMANCE CHARACTERISTICS
(OFF CHARACTERISTICS)
100 k
10,000 k
TJ = 25°C
VCC = 5.5 Vdc
Vin = 0.5 Vdc
OUTPUT LEAKAGE CURRENT (nA)
OUTPUT LEAKAGE CURRENT (nA)
1000 k
100 k
Vin = 0.35 Vdc
10 k
1.0 k
100
Vin = 0 Vdc
10
1.0
−55
−35
−15
5.0
45
25
TJ, JUNCTION TEMPERATURE (°C)
65
Vin = 0.5 Vdc
10 k
1.0 k
100
Vin = 0.35 Vdc
10
Vin = 0 Vdc
1.0
0
85
0
Figure 8. Output Leakage Current versus
Temperature
1.0
2.0
3.0
4.0
5.0
VCC, SUPPLY VOLTAGE (Vdc)
6.0
7.0
Figure 9. Output Leakage Current versus
Supply Voltage
1.0
Iout(max) = 500 mA
RCE(sat)
°PW = 10 ms
DC = 20%
TA = 25°C
° = TRANSISTOR PC THERMAL LIMIT
* = MAX L/R FROM ZENER PULSED ENERGY LIMIT
(REFER TO FIGURE 11)
*24 ms
°PW = 7.0 ms
DC = 5%
°PW = 0.1 s
DC = 50%
*34 ms
*90 ms
°CONTINUOUS DUTY
0.1
*232 ms
*375 ms
VCC(max) = +6.0 Vdc
TYPICAL
IZ vs VZ
0.01
0.1
1.0
Vout (VOLTS)
Figure 10. Safe Operating Area
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10
MDC3105LT1
100 k
TA = 25°C
Emax = 50 mJ
L/R = 2 * Emax ÷ (Vzpk * Izpk)
MAX L/R TIME CONSTANT (ms)
10 k
1.0 k
100
10
0.001
0.01
1.0
0.1
Izpk (AMPS)
Figure 11. Zener Repetitive Pulse Energy Limit
on L/R Time Constant
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
Pd(pk)
0.02
0.01
0.01
PW
SINGLE PULSE
t1
t2
PERIOD
DUTY CYCLE = t1/t2
0.001
0.01
0.1
1.0
10
100
t1, PULSE WIDTH (ms)
1000
Figure 12. Transient Thermal Response
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10,000
100,000
1,000,000
MDC3105LT1
Using TTR Designing for Pulsed Operation
the Pd(pk) calculated above. A circuit simulator having a
waveform calculator may prove very useful for this purpose.
For a repetitive pulse operating condition, time averaging
allows one to increase a device’s peak power dissipation
rating above the average rating by dividing by the duty cycle
of the repetitive pulse train. Thus, a continuous rating of 200
mW of dissipation is increased to 1.0 W peak for a 20% duty
cycle pulse train. However, this only holds true for pulse
widths which are short compared to the thermal time
constant of the semiconductor device to which they are
applied.
For pulse widths which are significant compared to the
thermal time constant of the device, the peak operating
condition begins to look more like a continuous duty
operating condition over the time duration of the pulse. In
these cases, the peak power dissipation rating cannot be
merely time averaged by dividing the continuous power
rating by the duty cycle of the pulse train. Instead, the
average power rating can only be scaled up a reduced
amount in accordance with the device’s transient thermal
response, so that the device’s max junction temperature is
not exceeded.
Figure 12 of the MDC3105LT1 data sheet plots its
transient thermal resistance, r(t) as a function of pulse width
in ms for various pulse train duty cycles as well as for a
single pulse and illustrates this effect. For short pulse widths
near the left side of the chart, r(t), the factor, by which the
continuous duty thermal resistance is multiplied to
determine how much the peak power rating can be increased
above the average power rating, approaches the duty cycle
of the pulse train, which is the expected value. However, as
the pulse width is increased, that factor eventually
approaches 1.0 for all duty cycles indicating that the pulse
width is sufficiently long to appear as a continuous duty
condition to this device. For the MDC3105LT1, this pulse
width is about 100 seconds. At this and larger pulse widths,
the peak power dissipation capability is the same as the
continuous duty power capability.
To use Figure 12 to determine the peak power rating for
a specific application, enter the chart with the worst case
pulse condition, that is the max pulse width and max duty
cycle and determine the worst case r(t) for your application.
Then calculate the peak power dissipation allowed by using
the equation,
Notes on SOA and Time Constant Limitations
Figure 10 is the Safe Operating Area (SOA) for the
MDC3105LT1. Device instantaneous operation should
never be pushed beyond these limits. It shows the SOA for
the Transistor “ON” condition as well as the SOA for the
zener during the turn−off transient. The max current is
limited by the Izpk capability of the zener as well as the
transistor in addition to the max input current through the
resistor. It should not be exceeded at any temperature. The
BJT power dissipation limits are shown for various pulse
widths and duty cycles at an ambient temperature of 25°C.
The voltage limit is the max VCC that can be applied to the
device. When the input to the device is switched off, the BJT
“ON” current is instantaneously dumped into the zener
diode where it begins its exponential decay. The zener clamp
voltage is a function of that BJT current level as can be seen
by the bowing of the VZ versus IZ curve at the higher
currents. In addition to the zener’s current limit impacting
this device’s 500 mA max rating, the clamping diode also
has a peak energy limit as well. This energy limit was
measured using a rectangular pulse and then translated to an
exponential equivalent using the 2:1 relationship between
the L/R time constant of an exponential pulse and the pulse
width of a rectangular pulse having equal energy content.
These L/R time constant limits in ms appear along the VZ
versus IZ curve for the various values of IZ at which the Pd
lines intersect the VCC limit. The L/R time constant for a
given load should not exceed these limits at their respective
currents. Precise L/R limits on zener energy at intermediate
current levels can be obtained from Figure 11.
Pd(pk) = (TJmax − TAmax) ÷ (RJA * r(t))
Pd(pk) = (150°C − TAmax) ÷ (556°C/W * r(t))
Thus for a 20% duty cycle and a PW = 40 ms, Figure 12
yields r(t) = 0.3 and when entered in the above equation, the
max allowable Pd(pk) = 390 mW for a max TA = 85°C.
Also note that these calculations assume a rectangular
pulse shape for which the rise and fall times are insignificant
compared to the pulse width. If this is not the case in a
specific application, then the VO and IO waveforms should
be multiplied together and the resulting power waveform
integrated to find the total dissipation across the device. This
then would be the number that has to be less than or equal to
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MDC3105LT1
Designing with this Data Sheet
there will be adequate input current available to turn
on the MDC3105 at all temperatures.
6. For levels of input current above 100 A, enter
Figure 3 using that max input current and determine
the input voltage required to drive the MDC3105
from the solid Vin versus Iin line. Select a suitable
drive source family from those whose dotted lines
cross the solid input characteristic line to the right
of the Iin, Vin point.
7. Using the max output current calculated in step 1,
check Figure 7 to insure that the range of zener
clamp voltage over temperature will satisfy all
system & EMI requirements.
8. Using Figures 8 & 9, insure that “OFF” state
leakage over temperature and voltage extremes does
not violate any system requirements.
9. Review circuit operation and insure none of the
device max ratings are being exceeded.
1. Determine the maximum inductive load current (at
max VCC, min coil resistance & usually minimum
temperature) that the MDC3105 will have to drive
and make sure it is less than the max rated current.
2. For pulsed operation, use the Transient Thermal
Response of Figure 12 and the instructions with it
to determine the maximum limit on transistor power
dissipation for the desired duty cycle and
temperature range.
3. Use Figures 10 & 11 with the SOA notes above to
insure that instantaneous operation does not push
the device beyond the limits of the SOA plot.
4. While keeping any VO(sat) requirements in mind,
determine the max input current needed to achieve
that output current from Figures 2 & 6.
5. For levels of input current below 100 A, use the
input threshold curves of Figure 4 to verify that
APPLICATIONS DIAGRAMS
+3.0 ≤ VDD ≤ +3.75 Vdc
+4.5 ≤ VCC ≤ +5.5 Vdc
+ +
AROMAT
TX2−L2−5 V
Vout (3)
Vout (3)
MDC3105LT1
74HC04 OR
EQUIVALENT
MDC3105LT1
Vin (1)
Vin (1)
GND (2)
GND (2)
Figure 13. A 200 mW, 5.0 V Dual Coil Latching Relay Application
with 3.0 V−HCMOS Level Translating Interface
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74HC04 OR
EQUIVALENT
MDC3105LT1
Max Continuous Current Calculation
for TX2−5V Relay, R1 = 178 Ω Nominal @ RA = 25°C
Assuming ±10% Make Tolerance,
R1 = 178 Ω * 0.9 = 160 Ω Min @ TA = 25°C
−
−
TC for Annealed Copper Wire is 0.4%/°C
AROMAT
JS1E−5V
R1 = 160 Ω * [1+(0.004) * (−40°−25°)] = 118 Ω Min @ −40°C
IO Max = (5.5 V Max − 0.25V) /118 = 45 mA
+4.5 TO +5.5 Vdc
AROMAT
JS1E−5V
+
+
+
+
+4.5 TO +5.5 Vdc
+
AROMAT
JS1E−5V
AROMAT
TX2−5V
AROMAT
JS1E−5V
−
−
Vout (3)
−
Vout (3)
MDC3105LT1
MDC3105LT1
74LS04
74HC04 OR
EQUIVALENT
BAL99LT1
Vin (1)
GND (2)
Figure 14. A 140 mW, 5.0 V Relay with TTL Interface
Figure 15. A Quad 5.0 V, 360 mW Coil Relay Bank
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MDC3105LT1
4.5
225
3.5
175
IC (mA)
V in (VOLTS)
TYPICAL OPERATING WAVEFORMS
2.5
125
1.5
75
500
M
25
10
30
50
TIME (ms)
70
90
10
9
172
7
132
5
52
1
12
30
50
TIME (ms)
70
70
90
92
3
10
50
TIME (ms)
Figure 17. 20 Hz Square Wave Response
IZ (mA)
Vout (VOLTS)
Figure 16. 20 Hz Square Wave Input
30
90
10
Figure 18. 20 Hz Square Wave Response
30
50
TIME (ms)
70
90
Figure 19. 20 Hz Square Wave Response
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MDC3105LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
K
J
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
MDC3105LT1
SMALLBLOCK is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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For additional information, please contact your
local Sales Representative.
MDC3105LT1/D