Order this document by MDC3105LT1/D SEMICONDUCTOR TECHNICAL DATA Motorola Preferred Device • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to 300 mW at 3 V to 5 V RELAY/SOLENOID DRIVER SILICON MONOLITHIC CIRCUIT BLOCK • Features Low Input Drive Current • Internal Zener Clamp Routes Induced Current to Ground Rather Than Back to Supply • Guaranteed Off State with No Input Connection • Supports Large Systems with Minimal Off–State Leakage 3 • ESD Resistant in Accordance with the 2000 V Human Body Model 1 • Provides a Robust Driver Interface Between Relay Coil and Sensitive Logic Circuits 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Applications include: • Telecom Line Cards and Telephony • Industrial Controls • Security Systems INTERNAL CIRCUIT DIAGRAM • Appliances and White Goods Vout (3) • Automated Test Equipment Vin 1.0 k • Automotive Controls 6.8 V This device is intended to replace an array of three to six discrete components with an integrated SMT part. It is available in a SOT–23 package. It can be used to switch other 3 to 5 Vdc Inductive Loads such as solenoids and small DC motors. (1) 33 k GND (2) MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage VCC 6.0 Vdc Recommended Operating Supply Voltage VCC 2.0–5.5 Vdc Input Voltage Vin(fwd) 6.0 Vdc Reverse Input Voltage Vin(rev) –0.5 Vdc Output Sink Current Continuous IO 300 mA Junction Temperature TJ 150 °C TA –40 to +85 °C Tstg –65 to +150 °C Symbol Max Unit PD 225 mW RqJA 556 °C/W Operating Ambient Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Total Device Dissipation(1) Derate above 25°C Thermal Resistance Junction to Ambient 1. FR–5 PCB of 1″ x 0.75″ x 0.062″, TA = 25°C Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice. Motorola, Small–Signal Inc. 1996 Motorola Transistors, FETs and Diodes Device Data 1 MDC3105LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BRout) V(–BRout) 6.4 — 6.8 –0.7 7.2 — V — — — — 5.0 30 — 2.5 — — 0.2 0.4 250 — — OFF CHARACTERISTICS Output Zener Breakdown Voltage (@ IT = 10 mA Pulse) Output Leakage Current @ 0 Input Voltage (Vout = 5.5 Vdc, Vin = O.C., TA = 25°C) (Vout = 5.5 Vdc, Vin = O.C., TA = 85°C) µA IOO ON CHARACTERISTICS Input Bias Current @ Vin = 4.0 Vdc (IO = 250 mA, Vout = 0.4 Vdc, TA = –40°C) (correlated to a measurement @ 25°C) Iin mAdc Output Saturation Voltage (IO = 250 mA, Vin = 4.0 Vdc, TA = –40°C) (correlated to a measurement @ 25°C) Vdc Output Sink Current Continuous (TA = –40°C, VCE = 0.4 Vdc, Vin = 4.0 Vdc ) (correlated to a measurement @ 25°C) IC(on) mA TYPICAL APPLICATION–DEPENDENT SWITCHING PERFORMANCE SWITCHING CHARACTERISTICS Symbol VCC Min Typ Max Propagation Delay Times: High to Low Propagation Delay; Figures 1, 2 (5.0 V 74HC04) Low to High Propagation Delay; Figures 1, 2 (5.0 V 74HC04) Characteristic tPHL tPLH 5.5 5.5 — — 55 430 — — High to Low Propagation Delay; Figures 1, 3 (3.0 V 74HC04) Low to High Propagation Delay; Figures 1, 3 (3.0 V 74HC04) tPHL tPLH 5.5 5.5 — — 85 315 — — High to Low Propagation Delay; Figures 1, 4 (5.0 V 74LS04) Low to High Propagation Delay; Figures 1, 4 (5.0 V 74LS04) tPHL tPLH 5.5 5.5 — — 55 2385 — — Transition Times: Fall Time; Figures 1, 2 (5.0 V 74HC04) Rise Time; Figures 1, 2 (5.0 V 74HC04) tf tr 5.5 5.5 — — 45 160 — — Fall Time; Figures 1, 3 (3.0 V 74HC04) Rise Time; Figures 1, 3 (3.0 V 74HC04) tf tr 5.5 5.5 — — 70 195 — — Fall Time; Figures 1, 4 (5.0 V 74LS04) Rise Time; Figures 1, 4 (5.0 V 74LS04) tf tr 5.5 5.5 — — 45 2400 — — ∆V/∆t in 5.5 TBD — — Units ns ns Input Slew Rate(1) V/ms 1. Minimum input slew rate must be followed to avoid overdissipating the device. tf Vin tr VCC 90% 50% 10% GND tPLH tPHL 90% 50% 10% Vout tTHL VZ VCC GND tTLH Figure 1. Switching Waveforms 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MDC3105LT1 +4.5 ≤ VCC ≤ +5.5 Vdc + + AROMAT TX2–L2–3 V Vout (3) Vout (3) MDC3105LT1 74HC04 OR EQUIVALENT Vin (1) MDC3105LT1 1k 1k 6.8 V Vin (1) 6.8 V 33 k 74HC04 OR EQUIVALENT 33 k GND (2) GND (2) Figure 2. A 3.0–V, 200–mW Dual Coil Latching Relay Application with 5.0 V–HCMOS Interface +3.0 ≤ VDD ≤ +3.75 Vdc +4.5 ≤ VCC ≤ +5.5 Vdc + + AROMAT TX2–L2–3 V Vout (3) Vout (3) MDC3105LT1 74HC04 OR EQUIVALENT Vin (1) MDC3105LT1 1k 1k 6.8 V Vin (1) 6.8 V 33 k 74HC04 OR EQUIVALENT 33 k GND (2) GND (2) Figure 3. A 3.0–V, 200–mW Dual Coil Latching Relay Application with 3.0 V–HCMOS Interface Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MDC3105LT1 +4.5 ≤ VCC ≤ +5.5 Vdc + + AROMAT TX2–L2–3 V Vout (3) Vout (3) MDC3105LT1 74LS04 BAL99LT1 MDC3105LT1 1k 1k 6.8 V BAL99LT1 6.8 V 33 k 74LS04 33 k Vin (1) Vin (1) GND (2) GND (2) Figure 4. A 3.0–V, 200–mW Dual Coil Latching Relay Application with TTL Interface +4.5 TO +5.5 Vdc + AROMAT R1 TX2–5 V – + R2 AROMAT TX2–5 V – Max Continuous Current Calculation R1 = R2 = 178 Ω Nominal @ TA = 25°C Vout (3) 74HC04 OR EQUIVALENT Assuming ±10% Make Tolerance, R1 = R2 = (178 Ω) (0.9) = 160 Ω Min @ TA = 25°C TC for Annealed Copper Wire is 0.4%/°C R1 = R2 = (160 Ω) [1+(0.004) (–40°–25°)] = 118 Ω Min @ –40°C N Vin (1) R1 in Parallel with R2 = 59 Ω Min @ –40°C Io – 0.4 V + 86 mA Max + 5.5 V59Max W Min 86 mA ≤ 300 mA Max Io spec. GND (2) Figure 5. Typical 5.0 V, 140 mW Coil Dual Relay Application 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MDC3105LT1 TYPICAL OPERATING WAVEFORMS 4.5 225 3.5 175 IC (mA) V in (VOLTS) (Circuit of Figure 5) 2.5 125 1.5 75 500M 25 10 30 50 TIME (ms) 70 90 10 172 7 132 IZ (mA) Vout (VOLTS) 9 5 52 1 12 50 TIME (ms) 70 90 10 Figure 8. 20 Hz Square Wave Response 90 30 50 TIME (ms) 70 90 Figure 9. 20 Hz Square Wave Response 600 1 TJ = 125°C Vo = 1.0 V Vo = 0.25 V 0.8 400 TJ = 85°C 300 TJ = 25°C 200 TJ = 25°C OUTPUT VOLTAGE (V) 500 hFE 70 92 3 30 50 TIME (ms) Figure 7. 20 Hz Square Wave Response Figure 6. 20 Hz Square Wave Input 10 30 TJ = – 40°C 175 0.6 1 10 50 125 250 IC = 350 mA 0.4 0.2 100 0 1 10 100 Io, OUTPUT SINK CURRENT (mA) 1000 Figure 10. Pulsed Current Gain Motorola Small–Signal Transistors, FETs and Diodes Device Data 0 1E–5 1E–4 1E–3 INPUT CURRENT 1E–2 Figure 11. Collector Saturation Region 5 MDC3105LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 6 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data MDC3105LT1 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 G C D H J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR CASE 318–08 ISSUE AE Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 MDC3105LT1 Motorola reserves the right to make changes without further notice to any products herein. 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